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Ando Takashi

IBM

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Archive | 2016

METHOD AND STRUCTURE FOR FORMATION OF REPLACEMENT METAL GATE FIELD EFFECT TRANSISTORS

Ando Takashi; Dasgupta Aritra; Kannan Balaji; Kwon Unoh

Archive | 2011

SEMICONDUCTOR STRUCTURE CAPTURING IMPURITY OXYGEN FOR HIGH-K GATE DIELECTRIC, AND METHOD FOR FORMING THE STRUCTURE (CAPTURE METAL STACK FOR HIGH-K GATE DIELECTRIC)

Ando Takashi; Choi Changhwan; Narayanan Vijay; Frank Martin M

Archive | 2018

INTEGRATED FERROELECTRIC CAPACITOR/ FIELD EFFECT TRANSISTOR STRUCTURE

Ando Takashi; Hashemi Pouya; Reznicek Alexander

Archive | 2018

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

Ando Takashi; Hashemi Pouya; Jagannathan Hemanth; Lee Choonghyun; Narayanan Vijay

Archive | 2017

Stacked planar capacitors with scaled EOT

Ando Takashi; Clevenger Lawrence A; Jagannathan Hemanth; Quon Roger A

Archive | 2017

FERROELECTRIC GATE DIELECTRIC WITH SCALED INTERFACIAL LAYER FOR STEEP SUB-THRESHOLD SLOPE FIELD-EFFECT TRANSISTOR

Ando Takashi; Frank Martin M; Narayanan Vijay

Archive | 2017

Multiple work function device using GeOx/TiN cap on work function setting metal

Ando Takashi; Hashemi Pouya; Lee Choonghyun

Archive | 2017

PATTERNED GATE DIELECTRICS FOR III-V-BASED CMOS CIRCUITS

Ando Takashi; Frank Martin M; Mo Renee T; Narayanan Vijay; Rozen John

IEEE Electron Device Letters | 2017

その場O_3治療によるAl_2O_3/HfO_2スタックを用いた高移動度高Ge含有SiGe PMOSFET【Powered by NICT】

Ando Takashi; Hashemi Pouya; Bruley John; Rozen John; Ogawa Yohei; Koswatta Siyuranga; K Chan Kevin; A Cartier Eduard; Mo Renee; Narayanan Vijay

Archive | 2016

Transistor device and method of forming the same

Ando Takashi; Kannan Balaji; Narayanan Vijay

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