André Anders

Dynamically Modulating the Surface Plasmon Resonance of Doped Semiconductor Nanocrystals

Localized surface plasmon absorption features arise at high doping levels in semiconductor nanocrystals, appearing in the near-infrared range. Here we show that the surface plasmons of tin-doped indium oxide nanocrystal films can be dynamically and reversibly tuned by postsynthetic electrochemical modulation of the electron concentration. Without ion intercalation and the associated material degradation, we induce a > 1200 nm shift in the plasmon wavelength and a factor of nearly three change in the carrier density.

Ion flux from vacuum arc cathode spots in the absence and presence of a magnetic field

Because plasma production at vacuum cathode spots is approximately proportional to the arc current, arc current modulation can be used to generate ion current modulation that can be detected far from the spot using a negatively biased ion collector. The drift time to the ion detector can used to determine kinetic ion energies. A very wide range of cathode materials have been used. It has been found that the kinetic ion energy is higher at the beginning of each discharge and approximately constant after 150 μs. The kinetic energy is correlated with the arc voltage and the cohesive energy of the cathode material. The ion erosion rate is in inverse relation to the cohesive energy, enhancing the effect that the power input per plasma particle correlates with the cohesive energy of the cathode material. The influence of three magnetic field configurations on the kinetic energy has been investigated. Generally, a magnetic field increases the plasma impedance, arc burning voltage, and kinetic ion energy. However, if the plasma is produced in a region of low field strength and streaming into a region of higher field strength, the velocity may decrease due to the magnetic mirroreffect. A magnetic field can increase the plasma temperature but may reduce the density gradients by preventing free expansion into the vacuum. Therefore, depending on the configuration, a magnetic field may increase or decrease the kinetic energy of ions.

Nanoindentation and Nanoscratching of Hard Carbon Coatings for Magnetic Disks

Nanoindentation and nanoscratching experiments have been performed to assess the mechanical properties of several carbon thin films with potential application as wear resistant coatings for magnetic disks. These include three hydrogenated-carbon films prepared by sputter deposition in a H{sub 2}/Ar gas mixture (hydrogen contents of 20, 34, and 40 atomic %) and a pure carbon film prepared by cathodic-arc plasma techniques. Each film was deposited on a silicon substrate to thickness of about 300 run. The hardness and elastic modulus were measured using nanoindentation methods, and ultra-low load scratch tests were used to assess the scratch resistance of the films and measure friction coefficients. Results show that the hardness, elastic modulus, and scratch resistance of the 20 and 34% hydrogenated films are significantly greater than the 40% film, thereby showing that there is a limit to the amount of hydrogen producing beneficial effects. The cathodic-arc film, with a hardness of greater than 59 GPa, is considerably harder than any of the hydrogenated films and has a superior scratch resistance.

Hardness, elastic modulus, and structure of very hard carbon films produced by cathodic‐arc deposition with substrate pulse biasing

The hardness, elastic modulus, and structure of several amorphous carbon films on silicon prepared by cathodic‐arc deposition with substrate pulse biasing have been examined using nanoindentation, energy loss spectroscopy (EELS), and cross‐sectional transmission electron microscopy. EELS analysis shows that the highest sp3 contents (85%) and densities (3.00 g/cm3) are achieved at incident ion energies of around 120 eV. The hardness and elastic modulus of the films with the highest sp3 contents are at least 59 and 400 GPa, respectively. These values are conservative lower estimates due to substrate influences on the nanoindentation measurements. The films are predominantly amorphous with a ∼20 nm surface layer which is structurally different and softer than the bulk.

Metal plasma immersion ion implantation and deposition : a review

Abstract Metal plasma immersion ion implantation and deposition (MePIIID) is a hybrid process combining cathodic arc deposition and plasma immersion ion implantation. The properties of a metal plasma produced by vacuum arcs are reviewed and the consequences for MePIIID are discussed. Different version of MePIIID are described and compared with traditional methods of surface modification such as ion beam assisted deposition (IBAD). MePIIID is a very versatile approach because of the wide range of ion species and energies used. At one extreme case, films are deposited with ions in the energy range 20–50 eV, and at the other extreme, ions can be implanted with high energy (100 keV or more) without film deposition. Novel features of the technique include the use of improved macroparticle filters; the implementation of several plasma sources for multi-element surface modification; tuning of ion energy during implantation and deposition to tailor the substrate-film intermixed layer and structure of the growing film; simultaneous pulsing of the plasma potential (positive) and substrate bias (negative) with a modified Marx generator; and the use of high ion charge states.

High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering

The commonly used current-voltage characteristics are found inadequate for describing the pulsed nature of the high power impulse magnetron sputtering (HIPIMS) discharge; rather, the description needs to be expanded to current-voltage-time characteristics for each initial gas pressure. Using different target materials (Cu, Ti, Nb, C, W, Al, and Cr) and a pulsed constant-voltage supply, it is shown that the HIPIMS discharges typically exhibit an initial pressure dependent current peak followed by a second phase that is power and material dependent. This suggests that the initial phase of a HIPIMS discharge pulse is dominated by gas ions, whereas the later phase has a strong contribution from self-sputtering. For some materials, the discharge switches into a mode of sustained self-sputtering. The very large differences between materials cannot be ascribed to the different sputter yields but they indicate that generation and trapping of secondary electrons play a major role for current-voltage-time characteristics. In particular, it is argued that the sustained self-sputtering phase is associated with the generation of multiply charged ions because only they can cause potential emission of secondary electrons, whereas the yield caused by singly charged metal ions is negligibly small.

Ion velocities in vacuum arc plasmas

Ion velocities in vacuum arc plasmas have been measured for most conducting elements of the Periodic Table. The method is based on drift time measurements via the delay time between arc current modulation and ion flux modulation. A correlation has been found between the element-specific ion velocity and average ion charge state; however, differently charged ions of the same element have approximately the same velocity. These findings contradict the potential hump model but are in agreement with a gasdynamic model that describes ion acceleration as driven by pressure gradients and electron-ion friction. The differences between elements can be explained by the element-specific power density of the cathode spot plasma which in turn determines the temperature, average charge state, and ion velocity of the expanding vacuum arc plasma.

Review of cathodic arc deposition technology at the start of the new millennium

Abstract The vacuum cathodic arc has been known as a means of producing coatings since the second half of the 19th century. This makes it one of the oldest known vacuum coating techniques. In the last century it has been recognized that the copious quantities of ions produced by the process provides certain coating property advantages. Specifically, ions can be steered and/or accelerated toward the parts to be coated. This, in turn, can provide enhanced adhesion, film density, and composition stoichiometry in the case of compound coatings. The ions generated by the cathodic arc have high ‘natural’ kinetic energy values in the range 20–200 eV, leading to enhanced surface mobility during the deposition process and even ion subplantation. In many cases, dense coatings are achieved even when the ions arrive at non-normal angles. The ion energy can be further manipulated by the plasma immersion biasing technique. Macroparticle contamination has been alleviated by a variety of novel plasma filters. The purpose of this review is to describe recent developments in macroparticle filtering and arc control. These developments promise to broaden the range of applications to the semiconductor, data storage, and optical coatings industry.

Transport of vacuum arc plasmas through magnetic macroparticle filters

Vacuum arc plasma deposition combined with magnetic filtering of the plasma to remove macroparticles is a promising technique for the production of metallic, compound and hard amorphous carbon thin films. High efficiency of the magnetic filter is a crucial parameter for the application of this technique. We report investigations of the influence of different filter designs, magnetic field configurations and electric potentials on the filter efficiency. We analyse the transport mechanisms on which the flow of plasma through the filter is based, and describe and discuss the occurrence of instabilities in magnetic filters. With an optimum filter arrangement we were able to obtain a filter output of 25% of the total number of ions produced by the vacuum arc discharge.

Metal plasma immersion ion implantation and deposition using vacuum arc plasma sources

Plasma source ion implantation (PSII) with metal plasma results in a qualitatively different kind of surface modification than with gaseous plasma due to the condensable nature of the metal plasma, and a new, PSII‐related technique can be defined: metal plasma immersion ion implantation and deposition (MPI). Tailored, high‐quality films of any solid metal, metal alloy, or carbon (amorphous diamond) can be formed by MPI using filtered vacuum arc plasma sources, and compounds such as oxides or nitrides can be formed by adding a gas flow to the deposition. Here we describe the plasma formation at cathode spots, macroparticle filtering of the vacuum arc plasma by magnetic ducts, the underlying physics of MPI, and present some examples of MPI applications.