Andrea Fiore

Waveguide superconducting single-photon detectors for integrated quantum photonic circuits

The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (∼20%) at telecom wavelengths, high timing accuracy (∼60 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators.

Quantum engineering of optical nonlinearities

Second-order optical nonlinearities in materials are of paramount importance for optical wavelength conversion techniques, which are the basis of new high-resolution spectroscopic tools. Semiconductor technology now makes it possible to design and fabricate artificially asymmetric quantum structures in which optical nonlinearities can be calculated and optimized from first principles. Extremely large second-order susceptibilities can be obtained in these asymmetric quantum wells. Moreover, properties such as double resonance enhancement or electric field control will open the way to new devices, such as fully solid-state optical parametric oscillators.

Impact of intraband relaxation on the performance of a quantum-dot laser

Measurements on 1.3-/spl mu/m quantum-dot lasers are presented that reveal a number of interesting effects. 1) At high bias, a second lasing line appears, corresponding to the excited state transition. 2) The linewidth enhancement factor increases dramatically above threshold. 3) The modulation performance is degraded when the second lasing line appears. A comprehensive numerical model is developed to explain this behavior. We attribute it to incomplete gain clamping above threshold. This is caused by a combination of the finite intraband relaxation time and the limited density of states.

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

We present the time-resolved optical characterization of InAs/InGaAs self-assembledquantum dots emitting at 1.3 μm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots.

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ=1300 nm and T=4.2 K.

Second-harmonic generation at λ=1.6 μm in AlGaAs/Al2O3 waveguides using birefringence phase matching

We demonstrate phase-matched second-harmonic generation from a λ=1.6 μm pump in a GaAs-based waveguide. Phase matching is obtained by using the form birefringence in an AlGaAs/Al2O3 multilayer obtained by selective wet oxidation.

Huge birefringence in selectively oxidized GaAs/AlAs optical waveguides

Selective wet oxidation of AlAs was used to obtain huge birefringence in GaAs/AlAs optical waveguides. A single polarization waveguide was obtained by oxidizing an AlAs layer buried in a GaAs guiding layer. The TM mode is below cutoff due to the high index contrast between the layers. Applications to phase matching in nonlinear optical conversion are envisaged.

Quantum dot superluminescent diodes emitting at 1.3 /spl mu/m

We report ridge-waveguide superluminescent diodes based on five stacks of self-assembled InAs-GaAs quantum dots. Devices with output powers up to 10 mW emitting around 1.3 /spl mu/m are demonstrated. Spectral analysis shows a broad emission peak (26-nm full-width at half-maximum) from the dot ground state at low injection, and an additional peak from the excited state at higher bias. Temperature characteristics in the range 10/spl deg/C-80/spl deg/C are also reported. The experimental curves are in good agreement with simulations performed using a traveling-wave rate equation model.

Engineering of light confinement in strongly scattering disordered media

Disordered photonic materials can diffuse and localize light through random multiple scattering, offering opportunities to study mesoscopic phenomena, control light-matter interactions, and provide new strategies for photonic applications. Light transport in such media is governed by photonic modes characterized by resonances with finite spectral width and spatial extent. Considerable steps have been made recently towards control over the transport using wavefront shaping techniques. The selective engineering of individual modes, however, has been addressed only theoretically. Here, we experimentally demonstrate the possibility to engineer the confinement and the mutual interaction of modes in a two-dimensional disordered photonic structure. The strong light confinement is achieved at the fabrication stage by an optimization of the structure, and an accurate and local tuning of the mode resonance frequencies is achieved via post-fabrication processes. To show the versatility of our technique, we selectively control the detuning between overlapping localized modes and observe both frequency crossing and anti-crossing behaviours, thereby paving the way for the creation of open transmission channels in strongly scattering media.

Local tuning of photonic crystal nanocavity modes by laser-assisted oxidation

The authors demonstrate a simple method to achieve local tuning of optical modes in GaAs photonic crystal nanocavities by continuous wave laser-assisted oxidation in air atmosphere. By irradiation with a focused laser beam at power levels of a few tens of milliwatts, photonic crystal nanocavity modes shift to shorter wavelengths by up to 2.5 nm. The mode shifts can be controlled either by varying the laser power or by iterating laser-assisted oxidation steps and are well explained by finite-element-method and finite-difference time-domain simulations. This method provides a simple route to achieve fine spectral tuning of individual nanocavities for photonic devices.