Andrea Gassmann

The role of Ca traces in the passivation of silicon dioxide dielectrics for electron transport in pentacene organic field effect transistors

Recently, n-type transport in organic field effect transistors (OFETs) incorporating pentacene on a silicon dioxide (SiO2) dielectric has been demonstrated by Ahles et al. [Appl. Phys. Lett. 85, 4499 (2004)]. The electron transport was made possible by modifying the dielectric/semiconductor interface using traces of Ca. While the facilitation of electron current in pentacene remained unclear at that point, an interface near filling of electron trap states in the transistor channel or on the SiO2 dielectric could be suggested as a possible explanation. In the following the influence of the Ca interlayer on the n-type transport in pentacene based OFETs will be correlated with an x-ray photoelectron spectroscopy analysis of the SiO2/Ca interface, in dependence of the Ca layer thickness. It is demonstrated that for low thicknesses an oxidized Ca insulator is formed on the SiO2 dielectric, allowing for the observed pentacene electron transport. The formation of the oxide is suggested to compensate available el...

Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12-di-o-Phenylenetetracene.

The molecular structure of the hydrocarbon 5,6;11,12-di-o-phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single-crystal X-ray study reveals two different motifs of intramolecular overlap with herringbone-type arrangement displaying either face-to-edge or co-facial face-to-face packing depicting intensive π-π interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a π-bond overlap in the DOPT polymorph with co-facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state-of-the-art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40 nm layer thickness it displays a saturation hole mobility (μhole ) of up to 0.01 cm(2)  V(-1)  s(-1) and an on/off-ratio (Ion /Ioff ) of 1.5×10(3) .

Interface properties of a Li3PO4/Al cathode in organic light emitting diodes

Recently Li3PO4/Al has been introduced as an alternative cathode for the commonly used LiF/Al system for organic light emitting diodes (OLEDs) due to its competitive electron injection properties. In the present article the interfaces of the organic semiconductor with the Li3PO4/Al bilayer cathode are investigated using photoelectron spectroscopy to elucidate the origin behind the efficient electron injection. Therefore, a thick Li3PO4 layer was vacuum deposited onto an indium tin oxide substrate and characterized in order to learn about the stoichiometry of evaporated Li3PO4. During evaporation Li3PO4 decomposes, forming a layer consisting of P2O5 and LiPO3. In a second step the interface between Li3PO4 and Alq3 [tris(8-hydroxyquinoline) aluminum] was investigated, whereupon Li3PO4 coverage Alq3 molecules decompose, forming aluminum oxide or aluminum phosphate leaving 8-quinolinol molecules behind. A similar reaction occurs at the Li3PO4/Al interface where again an oxidation of the metallic aluminum poin...

The Li3PO4/Al bilayer: An efficient cathode for organic light emitting devices

In this contribution an efficient cathode material for organic light emitting diodes (OLEDs) is introduced consisting of a thin layer of the metal salt lithium phosphate (Li3PO4) deposited between the organic semiconductor and an Al cathode. The bilayer cathode Li3PO4/Al enables a device performance of small molecule based OLEDs competitive to the benchmark cathode LiF/Al. While current densities and luminances of both systems are alike, the use of Li3PO4 substantially increases the device lifetime. It will be shown that the improved device characteristics can be ascribed to a stably enhanced electron injection. We demonstrate that neither a field enhancement across the Li3PO4 layer due to accumulated holes nor a possible charge transfer doping by the Li3PO4 is the reason for the improved electron injection. Investigation of the Li3PO4/Al interface by Kelvin probe techniques disclosed a work function lowering of the cathode that facilitates electron injection and finally explains the improvement in perfor...

Organic CMOS technology by interface treatment

In the present paper a new concept towards O-CMOS technology is presented substantiating the importance of the semiconductor/dielectric interface for charge carrier transport in organic semiconductors. It will be demonstrated that by controlling the interface properties of either SiO2 or PMMA, unipolar p- and n-type OFETs can be realized using a single organic semiconductor and even a single metal for source and drain contacts. Two dielectric/semiconductor interface modifications are considered for the realization of complementary OFETs on the basis of pentacene, otherwise known for its exclusive hole transporting properties. Selective modification of the SiO2 dielectric interface with traces of vacuum deposited Ca, allows for electron transport in pentacene and the realization of complementary pentacene OFETs on a single substrate. By this technique electron traps are removed due to a reaction of atomic Ca with oxygen from available hydroxide groups, resulting in the formation of an oxidized Ca layer. In a second approach, it is demonstrated that by selective UV treatment of a PMMA dielectric surface, unipolar n-type pentacene OFETs can be converted to unipolar p-type by the introduction of electron traps in the form of -OH and -COOH groups at the PMMA interface. Both methods allow for the realization of CMOS organic inverter stages with decent electrical properties.

The Challenge of Producing Fiber-Based Organic Electronic Devices

The implementation of organic electronic devices on fibers is a challenging task, not yet investigated in detail. As was shown earlier, a direct transition from a flat device structure to a fiber substrate is in principle possible. However, a more detailed investigation of the process reveals additional complexities than just the transition in geometry. It will be shown, that the layer formation of evaporated materials behaves differently due to the multi-angled incidence on the fibers surface. In order to achieve homogenous layers the evaporation process has to be adapted. Additionally, the fiber geometry itself facilitates damaging of its surface due to mechanical impact and leads to a high surface roughness, thereby often hindering commercial fibers to be used as substrates. In this article, a treatment of commercial polymer-coated glass fibers will be demonstrated that allows for the fabrication of rather flexible organic light-emitting diodes (OLEDs) with cylindrical emission characteristics. Since OLEDs rely the most on a smooth substrate, fibers undergoing the proposed treatment are applicable for other organic electronic devices such as transistors and solar cells. Finally, the technique also supports the future fabrication of organic electronics not only in smart textiles and woven electronics but also in bent surfaces, which opens a wide range of applications.

Cross-linkable random copolymers as dielectrics for low-voltage organic field-effect transistors

A large number of cross-linkable dielectrics with good dielectric properties have been reported; however, all of them suffer from disadvantages like uncontrolled pre-crosslinking, necessity of high process temperatures and the need for an additional cross-linking compound. In this contribution, two new poly(methyl methacrylate) polymers are introduced which can be cross-linked due to the attached benzyl azide (N3) monomer units making the addition of hardeners or initiators obsolete. The synthesis of the copolymers as well as their successful characterization and usage as gate dielectrics for organic field-effect transistors is demonstrated. The investigated polymers have been labeled PAZ 12 and PAZ 14 according to their azide content in mol%. The additional building blocks of the polymers are methyl methacrylate for PAZ 12 and methyl methacrylate and styrene monomer units in about an equal ratio for PAZ 14. Spin-coated thin films were cross-linked by a thermal treatment at 110 °C followed by an UV exposure at a wavelength of 254 nm yielding insoluble, smooth and electrically dense polymeric networks. Optimal cross-linking parameters were obtained using infrared spectroscopy to follow the N3 vibrational mode. Its disappearance confirms a complete cross-linking reaction, and thus fully reacted azide groups facilitate the analytics. The dielectric properties of the cross-linked thin films have been studied by impedance spectroscopy. The application of double layer dielectrics results in lower dielectric losses and lower leakage currents in the subsequently produced pentacene-based field-effect transistors. These devices operate at voltages below −6 V and show hysteresis-free current–voltage characteristics with hole mobilities up to 0.16 cm2 V−1 s−1. PAZ 12 appears to be superior to PAZ 14 due to a lower total layer thickness of down to 92 nm still providing good insulation in the transistor presumably related to a lower free volume that arises in the cross-linked network of the two-component containing copolymer PAZ 12.