Andrea Ghilardelli | Researchain

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Archive | 1999

Memory Architecture and Related Issues

Maurizio Branchetti; Giovanni Campardo; Stefano Commodaro; Stefano Ghezzi; Andrea Ghilardelli; Carla Golla; Ignazio Martines; Marco Maccarrone; Rino Micheloni; Matteo Zammattio; Stefano Zanardi

In the Flash memory scenario, several different approaches can be found, each one with its characteristics that make each solution more suitable for a particular application. One method to classify these different approaches is to consider the “memory architecture”, i.e. the way in which the array, and consequently the device, is organized.

Archive | 1998

NMOS negative charge pump

Andrea Ghilardelli; Jacopo Mulatti; Maurizio Branchetti

Archive | 1997

Positive charge pump

Andrea Ghilardelli; Jacopo Mulatti; Stefano Ghezzi

Archive | 1997

Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells

Marco Dallabora; Corrado Villa; Andrea Ghilardelli

Archive | 1997

Bidirectional charge pump generating either a positive or negative voltage

Andrea Ghilardelli; Giovanni Campardo; Jacopo Mulatti

Archive | 1999

Switching circuit having an output voltage varying between a reference voltage and a negative voltage

Andrea Ghilardelli; Stefano Ghezzi; Stefano Commodaro; Marco Maccarrone

Archive | 2000

Charge pump circuit for integrated memory devices

Andrea Ghilardelli

Archive | 1997

BiCMOS negative charge pump

Andrea Ghilardelli; Jacopo Mulatti; Maurizio Branchetti

Archive | 1996

MOS capacitor with wide voltage and frequency operating ranges

Andrea Ghilardelli; Stefano Ghezzi; Carla Golla

Archive | 1996

Output stage for a memory device and for low voltage applications

Giovanni Campardo; Stefano Zanardi; Andrea Ghilardelli

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