Andrea Zaffora

Electrochemical Tantalum Oxide for Resistive Switching Memories

Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2 O5 -based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical-oxide-based devices demonstrate superior properties, i.e., endurance of at least 106 pulse cycles and/or 103 I-V sweeps maintaining a good memory window with a low dispersion in ROFF and RON values, nanosecond fast switching, and data retention of at least 104 s. Multilevel programing capability is presented with both I-V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories.

Photoelectrochemical evidence of nitrogen incorporation during anodizing sputtering – deposited Al–Ta alloys

Anodic films were grown to 20 V on sputtering-deposited Al-Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the internal photoemission processes of electrons resulted to be independent of the anodizing electrolyte confirming that N incorporation does not appreciably affect the density of states distribution close to the conduction band mobility edge. The transport of photogenerated carriers has been rationalized according to the Pai-Enck model of geminate recombination.

Photocurrent Spectroscopy in Passivity Studies

The aim of this article is to present photocurrent spectroscopy as useful in situ technique for the physicochemical characterization of passive films and corrosion layers. The response of (both amorphous and crystalline) semiconductor/electrolyte junction under irradiation is treated and discussed in order to get information about solid-state properties such as band gap and flat band potential. The possibility to use Photocurrent Spectroscopy (PCS), in a quantitative way, to get information on the composition of corrosion layers is discussed through a semiempirical correlation between the band gap of the oxides (or hydroxides) and the difference of electronegativity of their constituents. Finally, a model able to simulate the photoelectrochemical behavior of double-layered films is reported.

Electroplated bismuth absorbers for planar NTD-Ge sensor arrays applied to hard x-ray detection in astrophysics

Single sensors or small arrays of manually assembled neutron transmutation doped germanium (NTD-Ge) based microcalorimeters have been widely used as high energy-resolution detectors from infrared to hard X-rays. Several planar technological processes were developed in the last years aimed at the fabrication of NTD-Ge arrays, specifically designed to produce soft X-ray detectors. One of these processes consists in the fabrication of the absorbers. In order to absorb efficiently hard X-ray photons, the absorber has to be properly designed and a suitable material has to be employed. Bismuth offers interesting properties in terms of absorbing capability, of low heat capacity (needed to obtain high energy resolution) and deposition technical feasibility, moreover, it has already been used as absorber for other types of microcalorimeters. Here we present the electroplating process we adopted to grow bismuth absorbers for fabricating planar microcalorimeter arrays for hard X-rays detection. The process was specifically tuned to grow uniform Bi films with thickness up to ~ 70 μm. This work is part of a feasibility study for a stratospheric balloon borne experiment that would observe hard X-rays (20-100 keV) from solar corona.

Anodization and Anodic Oxides

Anodizing is a low-temperature, low-cost electrochemical process allowing for the growth, on the surface of valve metals and valve metal alloys, of anodic oxides of tunable composition and properties. This article is an overview on theoretical aspects concerning the general aspects of the kinetics of growth of barrier and porous anodic oxides and some of their present and possibly future technological applications of anodic oxides. The first part of the article is devoted to anodic oxide growth models, from Guntherschulze and Betz work (in 1934) to the more recent results on barrier and porous oxide films. The second part is focused on industrial processes to fabricate anodic oxides and their application in different technological fields, such as coatings for corrosion protection and as dielectrics for electrolytic capacitors or as gate oxides in thin film field effect transistors (MOS-FET).