Andreas Fuhrer

Energy spectra of quantum rings.

Quantum mechanical experiments in ring geometries have long fascinated physicists. Open rings connected to leads, for example, allow the observation of the Aharonov–Bohm effect, one of the best examples of quantum mechanical phase coherence. The phase coherence of electrons travelling through a quantum dot embedded in one arm of an open ring has also been demonstrated. The energy spectra of closed rings have only recently been studied by optical spectroscopy. The prediction that they allow persistent current has been explored in various experiments. Here we report magnetotransport experiments on closed rings in the Coulomb blockade regime. Our experiments show that a microscopic understanding of energy levels, so far limited to few-electron quantum dots, can be extended to a many-electron system. A semiclassical interpretation of our results indicates that electron motion in the rings is governed by regular rather than chaotic motion, an unexplored regime in many-electron quantum dots. This opens a way to experiments where even more complex structures can be investigated at a quantum mechanical level.

Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot

We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime, we propose a method to directly determine the magnitude of the spin-orbit interaction in a two-electron artificial atom with strong spin-orbit coupling. Because of a large effective g factor |g(*)|=8+/-1, the transition from a singlet S to a triplet T+ ground state with increasing magnetic field is dominated by the Zeeman energy rather than by orbital effects. We find that the spin-orbit coupling mixes the T+ and S states and thus induces an avoided crossing with magnitude Delta(SO)=0.25+/-0.05 meV. This allows us to calculate the spin-orbit length lambda(SO) approximately 127 nm in such systems using a simple model.

Spatially Resolved Manipulation of Single Electrons in Quantum Dots Using a Scanned Probe

The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage-independent contribution.

Electrical properties of self-assembled branched InAs nanowire junctions

We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.

Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal-metal bilayers

We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal-metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light-metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a vertical thermal gradient whose sign and magnitude are determined by the resistivity difference and stacking order of the magnetic and nonmagnetic layers. We then study ferromagnet/heavy-metal bilayers with strong spin-orbit coupling, showing that second harmonic thermoelectric contributions to the transverse voltage may lead to a significant overestimation of the antidamping SOT. We find that thermoelectric effects are very strong in Ta(6 nm)/Co(2.5 nm) and negligible in Pt(6 nm)/Co(2.5 nm) bilayers. After including these effects in the analysis of the transverse voltage, we find that the antidamping SOTs in these bilayers, after normalization to the magnetization volume, are comparable to those found in thinner Co layers with perpendicular magnetization, whereas the fieldlike SOTs are about an order of magnitude smaller.

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K

Probing confined phonon modes by transport through a nanowire double quantum dot.

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In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K

Single electron pumping in InAs nanowire double quantum dots

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Magnetic-field-dependent transmission phase of a double-dot system in a quantum ring.

. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection.