Andreas Letsch

Innovative front end processing for next generation CIS module production

The successful implementation of two new process steps into an existing Cu(In,Ga)(Se,S)2 (CIS) production line was achieved. One, a newly developed back contact, aims for a better process control, as far as the transition of the metallic back contact to a selenide/metal bi-layer during CIS-formation is concerned. This was done by the introduction of a corrosion resistant barrier layer, which reliably stops chalcogenide diffusion from the top. By doing so, a back contact layer is obtained, with well defined properties in which the functionalities of the back electrode now is divided between two separated layers. The other development presented in this paper, tackles the complexity of CIS-module production and the interferences between the different processes required. By shifting the P1-scribing process after i-ZnO deposition, the process sequence for CIS is simplified and it will be shown that this new P1i exhibits superior properties as far as CIS morphology and groove quality is concerned.

Impact of P2 scribe geometry on monolithic series interconnected CIGS modules

The CIGS (Copper Indium Gallium Selenide) solar panel industry is cautiously moving to adopt laser processes for the P2 and the P3 scribe steps that form the electrical interconnection between cells within a module [1]. In this work we study variants of these two laser processes and evaluate their relative performance. P2 scribes are applied with geometries that range from continuous scribes to discrete spots and we examine the relationship between scribe geometry and P2 contact resistance. Transmission line theory [2] is used to calculate P2 contact resistance as is common in the industry. The results are compared with two simple geometric models that predict relative contact resistance for different scribe geometries. We also apply different types of scribes for both P2 and P3 in the production of minimodules and evaluate the results. We find that not only is the optimal geometry for the P2 scribe a continuous line, high overlap of the laser spots yields an improvement in contact resistance not predicted by geometry alone. Finally we find that removing only the TCO (transparent conductive oxide) layer for the P3 scribe results in modules with good efficiency, however a P3 scribe that removes the TCO and CIGS layer yields better modules with about 1% higher absolute efficiency.

CIGS P3 scribes using ultra-short laser pulses and thermal annealing

Thin-film photovoltaic panels consist of individual solar cells which are monolithically interconnected in series. Today, these connections are commonly realized by mechanical methods. In order to increase the solar output, it is one approach to minimize the interconnection area (so called “dead area”). In this regard, recent advances in laser patterning are gaining increasing potential. However, especially high-impedance trenches realized via laser scribing generally suffer from insufficient shunt resistances. This is especially the case for the third structuring stage P3 of CIGS solar modules, which represents the isolation of nearby cells.