Andrei Grebennikov

Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers

In this paper, a new circuit configuration of switched-mode tuned Class E power amplifiers with load network consisting of a parallel capacitance, a parallel inductance and a series resonant circuit tuned on the fundamental is defined using a detailed analytical description with a complete set of the design equations. The ideal collector voltage and current waveforms demonstrate a possibility of 100-percent efficiency. The circuit schematic of a parallel-circuit Class E power amplifier can be realized with lumped or transmission-line elements. Two examples of high power LDMOSFET and low-voltage HBT power amplifiers, utilizing a parallel-circuit Class E circuit configuration, are presented.

Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications

In this paper, an approach to high efficiency power amplifier performance over a wide frequency range is discussed. Results for practical implementation of a multiband and multi-mode handset power amplifier are shown. Measurements demonstrate feasibility of the concept for WCDMA, DCS1800 and PCS1900 high-efficient operation. A PAE of better than 38% at 27 dBm output power and an ACLR of -37 dBc in WCDMA operation, as well as greater than 50% PAE at 30 dBm output power in the DCS1800 and PCS1900 band are documented.

Simple design equations for broadband class E power amplifiers with reactance compensation

In this paper, a simple analytical design approach to determine the parameters of the loading networks to design broadband class E amplifiers is presented. The design equations are given for each element of single and double resonant loading circuits. The analysis and simulation were performed on the example of high-voltage LDMOSFET power amplifier, which show that in octave-band of 100-200 MHz the power gain of 10 dB with deviation of only /spl plusmn/0.5 dB and the drain efficiency of about 70% and higher can be achieved.

Switched-mode tuned high-efficiency power amplifiers: historical aspect and future prospect

In this paper, an analytical overview of theory and practice of the switched-mode RF and microwave tuned class-E power amplifiers are presented,. Well-known and unknown different circuit configurations, equation-based parameters and waveforms are given and discussed.

Switched-mode RF and microwave parallel-circuit Class E power amplifiers: Original Articles

The hydrodynamic transport equations for charges in a semiconductor have been solved for a periodic excitation by means of a harmonic approach, in order to model microwave and millimetre-wave active devices. The solution is based on the expansion of physical variables in a Fourier series in the time domain, and on discretisation in the space domain. A waveform-balance technique in the TD is used to solve the nonlinear equations system. This approach allows for a longer time step with respect to standard TD solutions for most cases of interest, greatly reducing simulation time by at least two orders of magnitude in typical cases.