Andres M. Somoza
McGill University
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Featured researches published by Andres M. Somoza.
Scientific Reports | 2016
M. Ortuño; Elisa Escasain; Elena López-Elvira; Andres M. Somoza; J. Colchero; E. Palacios-Lidón
The surface potential of conducting polymers has been studied with scanning Kelvin probe microscopy. The results show that this technique can become an excellent tool to really ‘see’ interesting surface charge interaction effects at the nanoscale. The electron glass model, which assumes that charges are localized by the disorder and that interactions between them are relevant, is employed to understand the complex behavior of conducting polymers. At equilibrium, we find surface potential domains with a typical lateral size of 50 nm, basically uncorrelated with the topography and strongly fluctuating in time. These fluctuations are about three times larger than thermal energy. The charge dynamics is characterized by an exponentially broad time distribution. When the conducting polymers are excited with light the surface potential relaxes logarithmically with time, as usually observed in electron glasses. In addition, the relaxation for different illumination times can be scaled within the full aging model.
Scientific Reports | 2015
M. Ortuño; Andres M. Somoza; Valerii M. Vinokur; Tatyana I. Baturina
There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.
Scientific Reports | 2018
Francisco Estellés-Duart; M. Ortuño; Andres M. Somoza; Valerii M. Vinokur; A. Gurevich
Proliferation of topological defects like vortices and dislocations plays a key role in the physics of systems with long-range order, particularly, superconductivity and superfluidity in thin films, plasticity of solids, and melting of atomic monolayers. Topological defects are characterized by their topological charge reflecting fundamental symmetries and conservation laws of the system. Conservation of topological charge manifests itself in extreme stability of static topological defects because destruction of a single defect requires overcoming a huge energy barrier proportional to the system size. However, the stability of driven topological defects remains largely unexplored. Here we address this issue and investigate numerically a dynamic instability of moving vortices in planar arrays of Josephson junctions. We show that a single vortex driven by sufficiently strong current becomes unstable and destroys superconductivity by triggering a chain reaction of self-replicating vortex-antivortex pairs forming linear of branching expanding patterns. This process can be described in terms of propagating phase cracks in long-range order with far-reaching implications for dynamic systems of interacting spins and atoms hosting magnetic vortices and dislocations.
PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors | 2010
M. Pollak; Andres M. Somoza; M. Ortuño
The work deals with a long standing problem of the importance of many‐body effects in electron glasses. The paper has two parts, a computer simulation and an analytical many‐body theory. Both include many‐body effects.
Physical Review B | 1999
Daniel Orlikowski; Celeste Sagui; Andres M. Somoza; Christopher Roland
Physical Review E | 1998
Celeste Sagui; Daniel Orlikowski; Andres M. Somoza; Christopher Roland
Physical Review E | 1996
Andres M. Somoza; Celeste Sagui
Physical Review B | 2015
Andres M. Somoza; M. Ortuño; Tatyana I. Baturina; Valerii M. Vinokur
arXiv: Strongly Correlated Electrons | 2016
Louk Rademaker; M. Ortuño; Andres M. Somoza
Archive | 2009
M. A. Caravaca; Andres M. Somoza; M. Ortuño