Andrew A. Bettiol

Proton beam writing

Proton beam (p-beam) writing is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nanodimensions. The process, although similar in many ways to direct writing using electrons, nevertheless offers some interesting and unique advantages. Protons, being more massive, have deeper penetration in materials while maintaining a straight path, enabling p-beam writing to fabricate three-dimensional, high aspect ratio structures with vertical, smooth sidewalls and low line-edge roughness. Calculations have also indicated that p-beam writing exhibits minimal proximity effects, since the secondary electrons induced in proton/electron collisions have low energy. A further advantage stems from the ability of protons to displace atoms while traversing material, thereby increasing localized damage especially at the end of range. P-beam writing produces resistive patterns at depth in Si, allowing patterning of selective regions with different optical properties as well as the removal of undamaged regions via electrochemical etching.

ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW

To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing a...

Three-dimensional nanolithography using proton beam writing

We report the utilization of a focused mega-electron-volt (MeV) proton beam to write accurate high-aspect-ratio structures at sub-100 nm dimensions. Typically, a MeV proton beam is focused to a sub-100 nm spot size and scanned over a suitable resist material. When the proton beam interacts with matter it follows an almost straight path. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. These features enable smooth three-dimensional structures to be direct written into resist materials. Initial tests have shown this technique capable of writing high aspect ratio walls of 30 nm width with sub-3 nm edge smoothness.

Fabrication of high aspect ratio 100nm metallic stamps for nanoimprint lithography using proton beam writing

We report a way of fabricating high-quality void-free high-aspect-ratio metallic stamps of 100nm width and 2μm depth, using the technique of proton beam writing coupled with electroplating using a nickel sulfamate solution. Proton beam writing is a one-step direct-write process with the ability to fabricate nanostructures with high-aspect-ratio vertical walls and smooth sides, and as such has ideal characteristics for three-dimensional (3D) stamp fabrication. Nanoindentation and atomic force microscopy measurements of the nickel surfaces of the fabricated stamp show a hardness and side-wall roughness of 5GPa and 7nm, respectively. The fabricated 100nm 3D stamps have been used to transfer test patterns into poly(methylmethacrylate) films, spin coated onto a silicon substrate. Proton beam writing coupled with electroplating offers a process of high potential for the fabrication of high quality metallic 3D nanostamps.

Three-dimensional microfabrication in bulk silicon using high-energy protons

We report an alternative technique which utilizes fast-proton irradiation prior to electrochemical etching for three-dimensional microfabrication in bulk p-type silicon. The proton-induced damage increases the resistivity of the irradiated regions and acts as an etch stop for porous silicon formation. A raised structure of the scanned area is left behind after removal of the unirradiated regions with potassium hydroxide. By exposing the silicon to different proton energies, the implanted depth and hence structure height can be precisely varied. We demonstrate the versatility of this three-dimensional patterning process to create multilevel free-standing bridges in bulk silicon, as well as submicron pillars and high aspect-ratio nanotips.

Increased frequency shifts in high aspect ratio terahertz split ring resonators

The resonance of split ring resonators (SRRs) is known to shift upon the addition of a dielectric overlayer, a feature useful for practical applications. Here, we demonstrate that the frequency shift is enlarged by increasing the SRR height, thereby potentially enhancing sensitivity and tunability. We fabricated SRRs resonating at terahertz frequencies using a focused proton beam. This resulted in SRRs nearly 10 μm high, with smooth and vertical sidewalls. Terahertz time domain spectroscopy was used for characterization. Upon applying a dielectric overlayer (ϵ=2.7), a resonance located at 640 GHz shifted by nearly 120 GHz. Simulations also indicate a widening frequency shift as SRR height increases.

Erbium-doped waveguide amplifiers fabricated using focused proton beam writing

Buried channel waveguides were fabricated in Er3+–Yb3+ codoped phosphate glasses using focused proton beam writing. Proton ion doses in the range of 1014–1015 ions/cm2 and 2.0 MeV energy were used. The waveguides were located 38 μm below the substrate surface and are in excellent agreement with the transport and range of ions in matter simulation. The waveguide properties were measured, and the fluorescence spectra and optical gain of the waveguides were characterized. The maximum net gain of the waveguide amplifiers at 1.534 μm wavelength was measured to be ∼1.72 dB/cm with 100 mW pump power at 975 nm wavelength.

Proton beam writing of low-loss polymer optical waveguides

Proton beam writing is a direct-write micromachining technique capable of producing three-dimensional microstructures with straight and smooth sidewalls. Low-loss channel waveguides in SU-8, a chemically amplified negative tone resist, were fabricated using a focused submicron beam of 2.0 MeV protons with a dose of 30 nC/mm2 and a beam current of approximately 2 pA. Propagation losses of approximately (0.19±0.03) dB/cm were measured at 632.8 nm wavelength. Waveguides of arbitrary design can be easily fabricated using proton beam writing, making the technique ideal for the rapid prototyping of optical circuits.

Controlling metamaterial resonances via dielectric and aspect ratio effects

We study ways to enhance the sensitivity and dynamic tuning range of the fundamental inductor-capacitor (LC) resonance in split ring resonators (SRRs) by controlling the aspect ratio of the SRRs and their substrate thickness. We conclude that both factors can significantly affect the LC resonance. We show that metafilms consisting of low height SRRs on a thin substrate are most sensitive to changes in their dielectric environment and thus show excellent potential for sensing applications.

Tailoring the slow light behavior in terahertz metasurfaces

We experimentally study the effect of near field coupling on the transmission of light in terahertz metasurfaces. Our results show that tailoring the coupling between the resonators modulates the amplitude of resulting electromagnetically induced transmission, probed under different types of asymmetries in the coupled system. Observed change in the transmission amplitude is attributed to the change in the amount of destructive interference between the resonators in the vicinity of strong near field coupling. We employ a two-particle model to theoretically study the influence of the coupling between bright and quasi-dark modes on the transmission properties of the system and we find an excellent agreement with our observed results. Adding to the enhanced transmission characteristics, our results provide a deeper insight into the metamaterial analogues of atomic electromagnetically induced transparency and offer an approach to engineer slow light devices, broadband filters, and attenuators at terahertz frequencies.