Andrew Alves

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

Remote auditing of radiotherapy facilities using optically stimulated luminescence dosimeters

PURPOSE On 1 July 2012, the Australian Clinical Dosimetry Service (ACDS) released its Optically Stimulated Luminescent Dosimeter (OSLD) Level I audit, replacing the previous TLD based audit. The aim of this work is to present the results from this new service and the complete uncertainty analysis on which the audit tolerances are based. METHODS The audit release was preceded by a rigorous evaluation of the InLight® nanoDot OSLD system from Landauer (Landauer, Inc., Glenwood, IL). Energy dependence, signal fading from multiple irradiations, batch variation, reader variation, and dose response factors were identified and quantified for each individual OSLD. The detectors are mailed to the facility in small PMMA blocks, based on the design of the existing Radiological Physics Centre audit. Modeling and measurement were used to determine a factor that could convert the dose measured in the PMMA block, to dose in water for the facilitys reference conditions. This factor is dependent on the beam spectrum. The TPR20,10 was used as the beam quality index to determine the specific block factor for a beam being audited. The audit tolerance was defined using a rigorous uncertainty calculation. The audit outcome is then determined using a scientifically based two tiered action level approach. Audit outcomes within two standard deviations were defined as Pass (Optimal Level), within three standard deviations as Pass (Action Level), and outside of three standard deviations the outcome is Fail (Out of Tolerance). RESULTS To-date the ACDS has audited 108 photon beams with TLD and 162 photon beams with OSLD. The TLD audit results had an average deviation from ACDS of 0.0% and a standard deviation of 1.8%. The OSLD audit results had an average deviation of -0.2% and a standard deviation of 1.4%. The relative combined standard uncertainty was calculated to be 1.3% (1σ). Pass (Optimal Level) was reduced to ≤2.6% (2σ), and Fail (Out of Tolerance) was reduced to >3.9% (3σ) for the new OSLD audit. Previously with the TLD audit the Pass (Optimal Level) and Fail (Out of Tolerance) were set at ≤4.0% (2σ) and >6.0% (3σ). CONCLUSIONS The calculated standard uncertainty of 1.3% at one standard deviation is consistent with the measured standard deviation of 1.4% from the audits and confirming the suitability of the uncertainty budget derived audit tolerances. The OSLD audit shows greater accuracy than the previous TLD audit, justifying the reduction in audit tolerances. In the TLD audit, all outcomes were Pass (Optimal Level) suggesting that the tolerances were too conservative. In the OSLD audit 94% of the audits have resulted in Pass (Optimal level) and 6% of the audits have resulted in Pass (Action Level). All Pass (Action level) results have been resolved with a repeat OSLD audit, or an on-site ion chamber measurement.

Top-down pathways to devices with few and single atoms placed to high precision

Solid-state devices that employ few and single atoms are emerging as a consequence of technological advances in classical microelectronics and proposals for quantum computers based on spin or charge. The fabrication of devices in both these areas requires the development of techniques for deterministic doping of silicon where few or single dopant atoms must be placed to, typically, nanometre precision. Here we discuss a top-down approach, based on deterministic ion implantation, which can potentially be used to fabricate devices intended to explore the novel challenges of designing, building and measuring solid-state devices at the single atom limit. In particular, we address the potential of fabricating more complex devices that exploit quantum coherence. We propose a prototype triple-donor device that transports electron spin qubits via the coherent tunnelling by adiabatic passage (CTAP) protocol for a scalable quantum computer. We examine theoretically the statistics of dopant placement using ion implantation by employing an analytical treatment of CTAP transport properties under hydrogenic assumptions. We evaluate the probability of fabricating proof of concept devices subject to the limitations of ion implantation. We find that the results are promising with a yield of one in six for 14keV phosphorus implanted into silicon with a target atom site spacing of 30nm with even higher yields possible for lower-energy implants. This suggests that deterministic doping is an important tool to fabricate and test near-term practical quantum coherent devices. 1 Author to whom any correspondence should be addressed.

Surface damage on diamond membranes fabricated by ion implantation and lift-off

Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.

National dosimetric audit network finds discrepancies in AAA lung inhomogeneity corrections

This work presents the Australian Clinical Dosimetry Services (ACDS) findings of an investigation of systematic discrepancies between treatment planning system (TPS) calculated and measured audit doses. Specifically, a comparison between the Anisotropic Analytic Algorithm (AAA) and other common dose-calculation algorithms in regions downstream (≥2cm) from low-density material in anthropomorphic and slab phantom geometries is presented. Two measurement setups involving rectilinear slab-phantoms (ACDS Level II audit) and anthropomorphic geometries (ACDS Level III audit) were used in conjunction with ion chamber (planar 2D array and Farmer-type) measurements. Measured doses were compared to calculated doses for a variety of cases, with and without the presence of inhomogeneities and beam-modifiers in 71 audits. Results demonstrate a systematic AAA underdose with an average discrepancy of 2.9 ± 1.2% when the AAA algorithm is implemented in regions distal from lung-tissue interfaces, when lateral beams are used with anthropomorphic phantoms. This systemic discrepancy was found for all Level III audits of facilities using the AAA algorithm. This discrepancy is not seen when identical measurements are compared for other common dose-calculation algorithms (average discrepancy -0.4 ± 1.7%), including the Acuros XB algorithm also available with the Eclipse TPS. For slab phantom geometries (Level II audits), with similar measurement points downstream from inhomogeneities this discrepancy is also not seen.

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

A 2D ion chamber array audit of wedged and asymmetric fields in an inhomogeneous lung phantom

PURPOSE The Australian Clinical Dosimetry Service (ACDS) has implemented a new method of a nonreference condition Level II type dosimetric audit of radiotherapy services to increase measurement accuracy and patient safety within Australia. The aim of this work is to describe the methodology, tolerances, and outcomes from the new audit. METHODS The ACDS Level II audit measures the dose delivered in 2D planes using an ionization chamber based array positioned at multiple depths. Measurements are made in rectilinear homogeneous and inhomogeneous phantoms composed of slabs of solid water and lung. Computer generated computed tomography data sets of the rectilinear phantoms are supplied to the facility prior to audit for planning of a range of cases including reference fields, asymmetric fields, and wedged fields. The audit assesses 3D planning with 6 MV photons with a static (zero degree) gantry. Scoring is performed using local dose differences between the planned and measured dose within 80% of the field width. The overall audit result is determined by the maximum dose difference over all scoring points, cases, and planes. Pass (Optimal Level) is defined as maximum dose difference ≤3.3%, Pass (Action Level) is ≤5.0%, and Fail (Out of Tolerance) is >5.0%. RESULTS At close of 2013, the ACDS had performed 24 Level II audits. 63% of the audits passed, 33% failed, and the remaining audit was not assessable. Of the 15 audits that passed, 3 were at Pass (Action Level). The high fail rate is largely due to a systemic issue with modeling asymmetric 60° wedges which caused a delivered overdose of 5%-8%. CONCLUSIONS The ACDS has implemented a nonreference condition Level II type audit, based on ion chamber 2D array measurements in an inhomogeneous slab phantom. The powerful diagnostic ability of this audit has allowed the ACDS to rigorously test the treatment planning systems implemented in Australian radiotherapy facilities. Recommendations from audits have led to facilities modifying clinical practice and changing planning protocols.

Probe and control of the reservoir density of states in single-electron devices

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si–SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

Characterization of an Alternative Diamond Based Microdosimeter Prototype

A diamond microdosimeter prototype with sensitive volumes separated through laser milled trenches is characterized. It is proposed that this design will offer a new and alternative means of creating a diamond based microdosimeter. The device has been characterized by means of ion beam induced charge collection (IBIC) measurements. In this work, it is shown that laser milled trenches have a significant effect upon the lateral confinement of charge collection essentially creating a pixelated diamond detector. Specifics of the results and an update on the current status of the project are presented.