Andrew Jolleys

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory

We report a new method for electrodeposition of device-quality metal chalcogenide semiconductor thin films and nanostructures from a single, highly tuneable, non-aqueous electrolyte. This method opens up the prospect of electrochemical preparation of a wide range of functional semiconducting metal chalcogenide alloys that have applications in various nano-technology areas, ranging from the electronics industry to thermoelectric devices and photovoltaic materials. The functional operation of the new method is demonstrated by means of its application to deposit the technologically important ternary Ge/Sb/Te alloy, GST-225, for fabrication of nanostructured phase change memory (PCM) devices and the quality of the material is confirmed by phase cycling via electrical pulsed switching of both the nano-cells and thin films.

Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts

A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] and [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [NnBu4]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, ‘bottom-up’ electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.

Unexpected neutral aza-macrocycle complexes of sodium

Highly unusual Na(+) complexes with neutral tri- and tetra-amines are isolable in good yield from the reaction of NaBAr(F) with the amine in organic media. Structural characterisation reveals primary Na-N bonding, including an unusual sandwich cation [Na(Me3tacn)2](+), derived from homoleptic N6-coordination via two Me3-tacn ligands, and the distorted 5-coordinate [Na(thf)(Me4cyclam)](+).

TeX4 (X = F, Cl, Br) as Lewis acids – complexes with soft thio- and seleno-ether ligands

TeF(4) reacts with OPR(3) (R = Me or Ph) in anhydrous CH(2)Cl(2) to give the colourless, square based pyramidal 1 : 1 complexes [TeF(4)(OPR(3))] only, in which the OPR(3) is coordinated basally in the solid state, (R = Me: d(Te-O) = 2.122(2) Å; R = Ph: d(Te-O) = 2.1849(14) Å). Variable temperature (19)F{(1)H}, (31)P{(1)H} and (125)Te{(1)H} NMR spectroscopic studies strongly suggest this is the low temperature structure in solution, although the systems are dynamic. The much softer donor ligands SMe(2) and SeMe(2) show a lower affinity for TeF(4), although unstable, yellow products with spectroscopic features consistent with [TeF(4)(EMe(2))] are obtained by the reaction of TeF(4) in neat SMe(2) or via reaction in CH(2)Cl(2) with SeMe(2). TeX(4) (X = F, Cl or Br) causes oxidation and halogenation of TeMe(2) to form X(2)TeMe(2). The Br(2)TeMe(2) hydrolyses in trace moisture to form [BrMe(2)Te-O-TeMe(2)Br], the crystal structure of which has been determined. TeX(4) (X = Cl or Br) react with the selenoethers SeMe(2), MeSe(CH(2))(3)SeMe or o-C(6)H(4)(SeMe)(2) (X = Cl) in anhydrous CH(2)Cl(2) to give the distorted octahedral monomers trans-[TeX(4)(SeMe(2))(2)], cis-[TeX(4){MeSe(CH(2))(3)SeMe}] and cis-[TeCl(4){o-C(6)H(4)(SeMe)(2)}], which have been characterised by IR, Raman and multinuclear NMR ((1)H, (77)Se{(1)H} and (125)Te{(1)H}) spectroscopy, and via X-ray structure determinations of representative examples. Tetrahydrothiophene (tht) can form both 1 : 1 and 1 : 2 Te : L complexes. For X = Br, the former has been shown to be a Br-bridged dimer, [Br(3)(tht)Te(μ-Br)(2)TeBr(3)(tht)], by crystallography with the tht ligands anti, whereas the latter are trans-octahedral monomers. Like its selenoether analogue, MeS(CH(2))(3)SMe forms distorted octahedral cis-chelates, [TeX(4){MeS(CH(2))(3)SMe}], whereas the more rigid o-C(6)H(4)(SMe)(2) unexpectedly forms a zig-zag chain polymer in the solid state, [TeCl(4){o-C(6)H(4)(SMe)(2)}](n), in which the dithioether adopts an extremely unusual bridging mode. This is in contrast to the chelating monomer, cis-[TeCl(4){o-C(6)H(4)(SeMe)(2)}], formed with the analogous selenoether and may be attributed to small differences in the ligand chelate bite angles. The wider bite angle xylyl-linked bidentates, o-C(6)H(4)(CH(2)EMe(2))(2) behave differently; the thioether forms cis-chelated [TeX(4){o-C(6)H(4)(CH(2)SMe)(2)}] confirmed crystallographically, whereas the selenoether undergoes C-Se cleavage and rearrangement on treatment with TeX(4), forming the cyclic selenonium salts, [C(9)H(11)Se](2)[TeX(6)]. The tetrathiamacrocycle, [14]aneS(4) (1,4,8,11-tetrathiacyclotetradecane), does not react cleanly with TeCl(4), but forms the very poorly soluble [TeCl(4)([14]aneS(4))](n), shown by crystallography to be a zig-zag polymer with exo-coordinated [14]aneS(4) units linked via alternate S atoms to a cis-TeCl(4) unit. Trends in the (125)Te{(1)H} NMR shifts for this series of Te(IV) halides chalcogenoether complexes are discussed.