Andrey Kudryavtsev

Electrically-detected ESR in silicon nanostructures inserted in microcavities

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.

Negative-U centers as a basis of topological edge channels

We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultranarrow silicon quantum well of the p-type (Si-QW), 2 nm, confined by the δ-barriers, 3 nm, heavily doped with boron on the n-type Si (100) surface. The ESR studies show that nanostructured δ-barriers confining the Si-QW consist predominantly of the dipole negative-U centers of boron, which are caused by the reconstruction of the shallow boron acceptors along the crystallographic axis, 2B0→B++B−. The electrically ordered chains of dipole negative-U centers of boron in the δ-barriers appear to give rise to the topological edge states separated vertically, because the value of the longitudinal, Gxx = 4e2/h, and transversal, Gxy = e2/h, conductance measured at extremely low drain-source current indicates the exhibition of the Quantum Spin Hall effect. Besides, the Aharonov-Casher conductance oscillations and the “0.7⋅(2e2/h)-feature” obtained are evidence of the interplay of the spontaneou...

Terahertz emission from silicon nanostructures heavily doped with boron

We present the first findings of the terahertz emission from the ultra-narrow p-type silicon quantum well confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The THz spectra revealed by the voltage applied along the Si-QW plane appear to result from the radiation of the dipole boron centers.

Electrically-detected magnetic resonance in semiconductor nanostructures inserted in microcavities

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance caused by the microcavities embedded in the Si-QW plane.

Fractional quantum conductance in edge channels of silicon quantum wells

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, Gxx, as a function of the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractions.

ODMR of single point defects in silicon nanostructures

We present the findings of the optically detected magnetic resonance technique (ODMR), which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ODMR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the Si-QW plane. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Magnetic resonance spectroscopy of single centers in silicon quantum wells

We present the new optically detected magnetic resonance (ODMR) technique which reveals single point defects in silicon quantum wells embedded in microcavities within frameworks of the excitonic normal-mode coupling (NMC) without the external cavity and the hf source.