Andrey M. Tokmachev

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

Following a remarkable success of metallic spintronics, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g., spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si-a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.

Effective electronic Hamiltonian for quantum subsystem in hybrid QM/MM methods as derived from APSLG description of electronic structure of classical part of molecular system

Abstract The general formulae representing separation of electronic variables of quantum (reactive) subsystem from those describing electrons in the classical (chemically inert) part of molecular system are specified for the case when the electronic structure of the latter is described by a semi-empirical method based on the trial wave function having the form of antisymmetrized product of strictly localized geminals (APSLG) which leads to a local description of molecular electronic structure in terms of bond functions and lone pair functions. This allowed us to give an explicit form of the effective electronic Hamiltonian for the quantum subsystem and also by this to sequentially derive the explicit form of the QM/MM junction between the quantum and classical subsystems. The latter turned out to be a sum of the contributions from different chemical bonds and lone pairs residing in the classical part of the system. Numerical estimates for the effect of the renormalization of the Coulomb interaction of π -electrons due to presence of σ -bonds are performed according to the derived formulae.

Europium Silicide – a Prospective Material for Contacts with Silicon

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics.

Local many-electron states in transition metal oxides and their surface complexes with atomic and molecular oxygen

The local many-electron states in transition metal oxides (TMOs) are considered in the framework of the effective Hamiltonian of the crystal field (EHCF) method. The calculations are performed with use of the 5 � 5 � 5 clusters modeling TMOs with the rock salt crystal structure. The d–d excitation spectra are calculated and discussed with the aim of interpreting the experimental data on optical adsorption and electron energy loss spectra. The EHCF method is extended to account for the electron correlation in the dshell and some electronic variables of ligands simultaneously. This approach is used to calculate the states of atomic and molecular oxygen on the surfaces of the TMOs. The possible role of geometric parameters of the adsorption complex is evaluated. The metal– oxygen distance and the exit of the metal ion from the surface plane are varied in a wide range. In the case of molecular oxygen different coordination forms are considered and for all adsorption systems the weights of different oxygen states (triplet, singlet, and charge transfer) are estimated.

Band structure of the EuO/Si interface: justification for silicon spintronics

Semiconductor spintronics provides a framework for hybrid devices combining logic, communication and storage, circumventing limitations of the current electronics, especially with respect to the energy efficiency. Enormous efforts have been invested worldwide into the development of spintronics based on Si, the mainstream semiconductor platform. Notwithstanding remarkable pace, Si spintronics still experiences a technological bottleneck – creation of significant spin polarization in nonmagnetic Si. An emerging approach based on direct electrical spin injection from a ferromagnetic semiconductor – EuO being the prime choice – avoids problems inherent to metallic injectors. The functionality of the EuO/Si spin contact is controlled by the interface band alignment. To be competitive with charge electronics, the EuO/Si interface should exhibit a band offset which falls within the 0.5–2 eV range. We employ a soft-X-ray ARPES technique, using synchrotron radiation with photon energies around 1 keV, to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.

Structural coupling across the direct EuO/Si interface.

The ferromagnetic semiconductor EuO is believed to be an effective spin injector when directly integrated with silicon (Si). Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. A recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. The synthesis of EuO employs an advanced protection of the Si substrate surface and a two-step growth protocol. It prevents unwanted chemical reactions at the interface. Ex situ high-resolution x-ray diffraction (XRD) and reflectivity (XRR) accompanied by in situ reflection high-energy electron diffraction reveal direct coupling at the interface. A combined analysis of XRD and XRR data provides a common structural model. The structural quality of the EuO/Si spin contact far exceeds that of previous reports and thus makes a step forward to the ultimate goals of spintronics.

Emerging two-dimensional ferromagnetism in silicene materials

The appeal of ultra-compact spintronics drives intense research on magnetism in low-dimensional materials. Recent years have witnessed remarkable progress in engineering two-dimensional (2D) magnetism via defects, edges, adatoms, and magnetic proximity. However, intrinsic 2D ferromagnetism remained elusive until recent discovery of out-of-plane magneto-optical response in Cr-based layers, stimulating the search for 2D magnets with tunable and diverse properties. Here we employ a bottom-up approach to produce layered structures of silicene (a Si counterpart of graphene) functionalized by rare-earth atoms, ranging from the bulk down to one monolayer. We track the evolution from the antiferromagnetism of the bulk to intrinsic 2D in-plane ferromagnetism of ultrathin layers, with its characteristic dependence of the transition temperature on low magnetic fields. The emerging ferromagnetism manifests itself in the electron transport. The discovery of a class of robust 2D magnets, compatible with the mature Si technology, is instrumental for engineering new devices and understanding spin phenomena.Exploring the magnetism in 2D materials paves the way to low-dimensional spintronics. Here the authors report evolution of bulk antiferromagnetism to intrinsic 2D in-plane ferromagnetism in layered structures of silicene functionalized by rare-earth atoms as they are scaled down to one monolayer.

High-Temperature Magnetism in Graphene Induced by Proximity to EuO

Addition of magnetism to spectacular properties of graphene may lead to novel topological states and design of spin logic devices enjoying low power consumption. A significant progress is made in defect-induced magnetism in graphene-selective elimination of p z orbitals (by vacancies or adatoms) at triangular sublattices tailors graphene magnetism. Proximity to a magnetic insulator is a less invasive way, which is being actively explored now. Integration of graphene with the ferromagnetic semiconductor EuO has much to offer, especially in terms of proximity-induced spin-orbit interactions. Here, we synthesize films of EuO on graphene using reactive molecular beam epitaxy. Their quality is attested by electron and X-ray diffraction, cross-sectional electron microscopy, and Raman and magnetization measurements. Studies of electron transport reveal a magnetic transition at TC* ≈ 220 K, well above the Curie temperature 69 K of EuO. Up to TC*, the dependence R xy( B) is strongly nonlinear, suggesting the presence of the anomalous Hall effect. The role of synthesis conditions is highlighted by studies of an overdoped structure. The results justify the use of the EuO/graphene system in spintronics.

Spin gap in heavy fermion compound UBe13

Heavy fermion (HF) compounds are well known for their unique properties, such as narrow bandwidths, loss of coherence in a metal, non-Fermi-liquid behaviour, unconventional superconductivity, huge magnetoresistance etc. While these materials have been known since the 1970s, there is still considerable uncertainty regarding the fundamental mechanisms responsible for some of these features. Here we report transverse-field muon spin rotation (μ +SR) experiments on the canonical HF compound UBe13 in the temperature range from 0.025 to 300 K and in magnetic fields up to 7 T. The μ +SR spectra exhibit a sharp anomaly at 180 K. We present a simple explanation of the experimental findings identifying this anomaly with a gap in the spin excitation spectrum of f-electrons opening near 180 K. It is consistent with anomalies discovered in heat capacity, NMR and optical conductivity measurements of UBe13, as well as with the new resistivity data presented here. The proposed physical picture may explain several long-standing mysteries of UBe13 (as well as other HF systems).