Ángel Mediavilla Sánchez

Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's

An empirical approach is proposed which accounts for low-frequency dispersive phenomena due to surface state densities, deep level traps and device heating, in the modeling of the drain current response of III-V FETs. The model, which is based on mild assumptions justified both by theoretical considerations and experimental results, has been applied to GaAs MESFETs of different manufacturers. Experimental and simulation results that confirm the validity of the model are provided in the paper.<<ETX>>

An accurate photonic capacitance model for GaAs MESFETs

A new set of pseudoempirical equations is presented in order to simulate the optical and bias dependencies of GaAs MESFET junction capacitances, which is valid for the whole I-V plane. The variations induced in the small-signal equivalent circuit by the optical illumination are extracted from on-wafer scattering parameter measurements. New linear and quasi-logarithmic variations versus the incident optical power are shown for gate-drain and gate-source (Cgd and Cgs) capacitances. Furthermore, experimental results are in very good agreement with the simulated values for a wide range of optical power and bias conditions. Large signal MESFET models show a better fit with measured S-parameters than those previously published, leading to a greater degree of confidence in the design of photonic monolithic microwave integrated circuits.

Smoothing the canonical piecewise-linear model: an efficient and derivable large-signal model for MESFET/HEMT transistors

In this paper we present the smoothed piecewise-linear (SPWL) model as a useful tool in the device modeling field. The SPWL model is an extension of the well-known canonical piecewise-linear model proposed by Chua, which substitutes the abrupt absolute value function for a smoothing function (the logarithm of hyperbolic cosine), thus providing the model with several interesting properties. In particular, this function makes the model derivable, which is important to predict the intermodulation distortion behavior. Moreover, it allows one to control the smoothness of the global model by means of a single smoothing parameter. The parameters of the model are adapted to fit the nonlinear function, while the smoothing parameter is selected according to derivative constraints. The applied learning algorithm is a second-order gradient method. The proposed SPWL model is successfully applied to model a microwave HEMT transistor under optical illumination using real measurements. The model receives as input the bias voltages of the transistor, the instantaneous voltages, and the optical power and provides the drain to source current. The performance and computational burden of the SPWL model is compared with an empirical model and with some neural networks-based alternatives.

Measurement of mobility in HEMT devices using high-order derivatives

In this paper, a novel approach to the measurement of mobility of GaAs HEMT devices is presented. The new approach employs high-order derivatives as a means of determining the parameters of the proposed new mobility equation. The new approach is compared to established mobility measurement methods, and shown to offer better accuracy. The results presented also consider the behavior of mobility in the linear and saturation bias regions. The mobility value extracted by this new method has permitted improvements to the MESFET/HEMT model when simulating the behavior of the device in the linear region. This is critical in many applications, such as in low current linear-mixing applications.

Nonlinear Modeling of Trapping and Thermal Effects on GaAs and GaN Mesfet/HEMT Devices

A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from i70 - C to +70 - C) without the need of an additional electro-thermal sub-circuit. This is an important issue in high power GaN HEMT devices where self-heating and current collapse due to traps is a more serious problem. The parameter extraction strategy of the new model is simple to implement. The robustness of the model when performing harmonic balance simulation makes it suitable for RF and microwave designers. Experimental results presented demonstrate the accuracy of the model when simulating both the small-signal and large- signal behavior of the device over a wide range of frequency, bias and ambient temperature operating points. The model described has been implemented in the Advanced Design System (ADS) simulator to validate the proposed approach without convergence problems.

CPW and microstrip line-fed compact fractal antenna for UWB-RFID applications

In this study, we present an implementation of Ultra Wide Band (UWB) Koch Snowflake antenna for Radio Frequency Identification (RFID) applications. The compact antenna, based on the Koch Snowflake shape, is fed by coplanar waveguide (CPW) and by microstrip line with an overall size of 31 × 27 × 1. 6m m 3 . The simulation analysis is performed by CST Microwave Studio and compared with HFSS software. The antenna design exhibits a very wide operating bandwidth of 13 GHz (3.4- 16.4 GHz) and 11 GHz (3.5-14.577 GHz) with return loss better than 10 dB for microstrip line antenna and CPW antenna respectively. A prototype of CPW and microstrip antenna was fabricated on an FR4 substrate and measured. Simulated and measured results are in close agreement. The small size of the antenna and the obtained results show that the proposed antenna is an excellent candidate for UWB-RFID localization system applications.

Internal compact printed loop antenna for WWAN/WLAN/ISM/LTE smartphone applications

In this paper, we designed and developed a novel internal compact printed loop antenna for WWAN/WLAN/ISM/LTE smartphone applications. The proposed antenna is composed of a meander loop antenna and a capacitively coupled feeding line. It has a planar structure, with an overall dimension of 120 × 60 mm 2 , the antenna portion occupying a size of 20 × 60 mm 2 , which makes it suitable for practical smartphone applications. The results of our measurement reveal that the prototype antenna can provide two wide frequency bands of 712–1078 and 1757–2930 MHz, which cover multi-band for GSM850/GSM900/DCS1800/PCS1900/UMTS2100/IMT2000/WLAN2400/ISM2450/LTE700/LTE2300/ LTE2500. The antenna also shows good radiation characteristics and gain peaks for frequencies over the desired operating bands. We also studied the specific absorption rate (SAR) of the proposed antenna placed at the bottom of a mobile phone. The obtained SAR values are all below the SAR limit of 1.6 W/kg for the 1 g head tissue and 2.0 W/kg for the 10 g head tissue. We used CST Microwave Studio and Ansoft HFSS for the simulation and the design of the antenna and present in this paper the details of the design considerations, as well as the results on the reflection coefficient, the surface current distributions, the radiation characteristics, and the gain of the proposed antenna.

A Novel Wideband Bandpass Filter Using Coupled Lines and T-Shaped Transmission Lines with Wide Stopband on Low-Cost Substrate

This paper presents the design, simulation, fabrication and measurement of a wideband bandpass filter with wide stopband performance operating at 3.5 GHz. The proposed filter consists of two parallel coupled lines (T-PCL) centred by T-inverted shape. The location of transmission zeros can be adjusted by varying the physical lengths of T-inverted shape to improve the filter selectivity. The wide bandwidth is achieved through enhanced coupling between the input and the parallel coupled lines. Due to the transmission zeros in the lower and upper stopbands, the filter exhibits good performance including an extremely wide stopband and sharp attenuations near the passband together with low insertion and good return losses in the passband. The filter performance is investigated numerically by using CST-MWS. Finally, the microstrip wideband BPF with minimum insertion losses 0.3 dB, centred at 3.5 GHz with a 3-dB fraction bandwidth of 70% and four transmission zeros is implemented and verified experimentally. In addition, good agreement between the simulated and measured results is achieved.

Contribution to the Development of Flat Fresnel Reflectors in W Band for New Imaging Applications

This work presents an experimental study in W band about the behavior of a plane Fresnel re∞ector when the feeder changes its position on the surface of a sphere whose centre is the same of the Fresnel plate zones. For this purpose, an experimental system based on seven Fresnel plate zones and two difierent levels has been developed. The center frequency of the re∞ector is 96GHz, the focal length is 100mm and height between levels is 0.78mm. Based on this Fresnel re∞ector, an experimental set up has been developed. The horn antenna feeder is flxed and situated in far fleld and the receiver is also a horn antenna located at the Fresnel focal distance. Both the re∞ector and the receiving antenna have some rotation capability to enable measurements from difierent angles. The experimental results show a good, stable behavior in gain versus the angular position of the feeder. This special property of Fresnel re∞ectors is impossible in parabolic re∞ectors and consequently, Fresnel re∞ectors could be used in new applications as radar imaging, increasing the radar fleld of view or improving the resolution by means of several squint feeders working simultaneously on the same lens or re∞ector. Therefore, the main objective of this paper is to analyze the behavior of this experimental set up for developing new Fresnel re∞ector-based applications.

Planar wideband band-stop filter with T-inverted shaped open stubs for wideband applications

This paper presents a wideband band-stop filter (BSF) structure designed by using planar technology. The proposed filter consists of a modified conventional band-stop structure with open stubs, inner T-inverted shape, and two input/output feed lines. Based on series of optimization and a specific design method, two compact filters with good electrical performance are obtained. In order to characterize the frequency response of the proposed filters, the performance is carried out numerically using two different solvers (Advanced Design System -Momentum and CST-MWS). Furthermore, in order to validate the conception approach, two circuits are designed, fabricated, and tested. Additionally, an equivalent circuit of the wideband BSF is built to estimate the electromagnetic simulation results for practical realization. The features of the design have a reduced size, wideband rejection, and higher insertion losses, which can be performed by adjusting the L-shaped stubs (23.25 × 2.2 mm 2 ) toward the 50 Ω input and output ports. Two filters are designed, fabricated, and tested; one can be operated between an fractional bandwidth (FBW) of about 50% at a center frequency of 1.8 GHz, and the other can be switched from an FBW of 43.38% at a center frequency of 1.82 GHz. In addition, good agreement between the simulation and the measured results is achieved. The overall size of each filter is 43.4 × 34.5 mm 2 .