Anthony B. Hmelo

Process Dependence of Proton-Induced Degradation in GaN HEMTs

The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.

Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements.

Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors

The authors report a sensing scheme to detect the translocation of small particles through a fluidic channel. The device connects the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a fluidic circuit and monitors the FET’s drain current to detect particles. They demonstrate that amplification can be achieved from both the fluidic circuit and the MOSFET. The results show that a 0.7% volume ratio of the particle to the sensing microchannel can lead to 28%–56% modulation of the MOSFET’s drain current. The minimum volume ratio detected is 0.006%, which is about ten times smaller than the lowest detectable volume ratio reported in the literature.

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.

Profiling and Imaging Ion Mobility-Mass Spectrometry Analysis of Cholesterol and 7-Dehydrocholesterol in Cells Via Sputtered Silver MALDI

AbstractProfiling and imaging of cholesterol and its precursors by mass spectrometry (MS) are important in a number of cholesterol biosynthesis disorders, such as in Smith-Lemli-Opitz syndrome (SLOS), where 7-dehydrocholesterol (7-DHC) is accumulated in affected individuals. SLOS is caused by defects in the enzyme that reduces 7-DHC to cholesterol. However, analysis of sterols is challenging because these hydrophobic olefins are difficult to ionize for MS detection. We report here sputtered silver matrix-assisted laser desorption/ionization (MALDI)-ion mobility-MS (IM-MS) analysis of cholesterol and 7-DHC. In comparison with liquid-based AgNO3 and colloidal Ag nanoparticle (AgNP), sputtered silver NP (10–25 nm) provided the lowest limits-of-detection based on the silver coordinated [cholesterol + Ag]+ and [7-DHC + Ag]+ signals while minimizing dehydrogenation products ([M + Ag-2H]+). When analyzing human fibroblasts that were directly grown on poly-L-lysine-coated ITO glass plates with this technique, in situ, the 7-DHC/cholesterol ratios for both control and SLOS human fibroblasts are readily obtained. The m/z of 491 (specific for [7-DHC + 107Ag]+) and 495 (specific for [cholesterol + 109Ag]+) were subsequently imaged using MALDI-IM-MS. MS images were co-registered with optical images of the cells for metabolic ratio determination. From these comparisons, ratios of 7-DHC/cholesterol for SLOS human fibroblasts are distinctly higher than in control human fibroblasts. Thus, this strategy demonstrates the utility for diagnosing/assaying the severity of cholesterol biosynthesis disorders in vitro.Graphical Abstract

Growth of solid and hollow gold particles through the thermal annealing of nanoscale patterned thin films

Through thermally annealing well-arrayed, circular, nanoscale thin films of gold, deposited onto [111] silicon/silicon dioxide substrates, both solid and hollow gold particles of different morphologies with controllable sizes were obtained. The circular thin films formed individual particles or clusters of particles by tuning their diameter. Hollow gold particles were characterized by their diameter, typically larger than 400 nm; these dimensions and properties were confirmed by cross-section scanning electron microscopy. Hollow gold particles also exhibited plasmonic field enhancement under photoemission electron microscopy. Potential growth mechanisms for these structures were explored.

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne++ for doses between 1011–1013 cm−2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the freque...

Ion implantation induced modification of optical properties in single-crystal diamond studied by coherent acoustic phonon spectroscopy

Single-crystal CVD diamond specimens were implanted with 1-MeV He+ ions at fluences ranging from 1014 to 1016 cm−2 and analyzed using coherent acoustic phonon spectroscopy. The coherent acoustic phonon response varies greatly with implantation fluence and provides depth-dependent information about the implantation defect-induced modification of diamonds optical characteristics. The results indicate an increase in the real and imaginary refractive index, as well as a sign reversal of the photoelastic coefficients at higher levels of implantation damage. These studies provide insight into the application of ion implantation to the fabrication of diamond-based photonic devices.

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors

MOS capacitors with 7 nm SiO2 dielectrics and n-doped Si substrate were irradiated by 1.8 MeV protons with fluences ranging from 1012 to 5 × 1013 cm−2 which correspond to the typical LHC fluence range. No significant increase in gate oxide leakage current was detected. A decrease of the capacitance was observed in the accumulation regime. This effect is explained by an increase of the substrate resistivity caused by displacement damage.

Radiation Effects on the Photoluminescence of Rare-Earth Doped Pyrochlore Powders

This work examined the sensitivity of the luminescence spectra of europium-doped lanthanum zirconate to different types and amounts of radiation exposure. For the samples and radiation sources used in this work (X-rays and protons), changes in the photoluminescence of europium-doped lanthanum zirconate were minimal. However, when the phosphor was paired with an alternate luminescent material, which had a differing radiation response, relative changes in the photoluminescence of the two materials were correlated to the radiation exposure.