Anthony E. Novembre
Alcatel-Lucent
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Featured researches published by Anthony E. Novembre.
Polymer International | 1999
Elsa Reichmanis; Omkaram Nalamasu; Francis M. Houlihan; Anthony E. Novembre
In the last two decades, major advances in fabricating very large scale integration (VLSI) electronic devices have placed increasing demands on microlithography, the technology used to generate todays integrated circuits. In 1970, state-of-the-art devices contained several thousand transistors with minimum features of 10-12 μm. Today, they have several million transistors and minimum features of less than 0.3 μm. Within the next 10-15 years, a new form of lithography will be required that routinely produces features of less than 0.2 μm. Short-wavelength (deep-UV) photolithography and scanning and projection electron-beam and X-ray lithography are the possible alternatives to conventional photolithography. The consensus candidate for the next generation of lithography tools is photolithography using 193 nm light. At this wavelength, the opacity of traditional materials precludes their use, and major research efforts to develop alternative materials are currently underway. Notably, the materials being developed for these short UV wavelengths are demonstrating compatibility with the more advanced electron-beam technologies. Materials properties must be carefully tailored to maximize lithographic performance with minimal sacrifice of other performance attributes, eg adhesion, solubility and RF plasma etching stability.
Japanese Journal of Applied Physics | 1995
J. Alexander Liddle; Steven D. Berger; Chris J. Biddick; Myrtle I. Blakey; Keven J. Bolan; Stephen W. Bowler; Kevin J. Brady; Ron M. Camarda; Wayne F. Connelly; Andy Crorken; Joe Custy; Reggie C. Farrow; Joe A. Felker; Linus A. Fetter; Bob Freeman; L. R. Harriott; Leslie C. Hopkins; H. A. Huggins; Chester S. Knurek; Joe S. Kraus; Dave A. Mixon; Masis Mkrtchyan; Anthony E. Novembre; Milton L. Peabody; Wayne M. Simpson; R. G. Tarascon; Harry H. Wade; W. K. Waskiewicz; G. Patrick Watson; Joe K. Williams
A SCALPEL\circledR (SCattering with Angular Limitation in Projection Electron-beam Lithography) proof-of-concept lithography system, comprising a tool, a reticle and a resist, has been designed to address the critical issues that must be investigated to determine if this approach is viable as a practical lithographic technology.
Journal of Vacuum Science & Technology B | 2000
Leonidas E. Ocola; P. A. Orphanos; W.-Y. Li; W. K. Waskiewicz; Anthony E. Novembre; M. Sato
In this article we discuss the line edge roughness of positive chemically amplified resists exposed on the SCALPEL exposure system in terms of the image formation process. The image formation process for a SCALPEL exposure on a positive chemically amplified resist has been simulated using discrete models from exposure through development. Key parameters have been identified that enable image formation simulations without the need of detailed molecular models. Molecular models are needed though to obtain several of these parameters. Surface and line edge roughness, as measured by scanning electron microscopy and atomic force microscopy, have been simulated and compared to experimental results. Results are consistent with a “percolation network formation for diffusion-reaction development” model for chemically amplified resists.
Journal of Vacuum Science & Technology B | 1998
Masis Mkrtchyan; James Alexander Liddle; Anthony E. Novembre; W. K. Waskiewicz; G. P. Watson; L. R. Harriott; David A. Muller
Electron scattering in thin solid films used for the fabrication of masks for electron projection lithography, e.g., SCALPEL®, is investigated. We have developed an analytical model to calculate electron transmission through the mask membrane and image contrast due to different scattering properties of the patterned area and the membrane. The model utilizes cross sections for electron elastic and inelastic scattering on an atom with exponentially screened Coulomb potential of the nucleus derived in the first Born approximation. The variety and controversy of theoretical and empirical adjustments of the screening parameter are briefly analyzed and attributed to the misinterpretation of experimental data ignoring the effects mostly due to plural scattering of electrons and dense packing of atoms in thin solid films. This model frees us from the computational limitations of Monte Carlo simulations and proves to be effective for the straightforward characterization of various alternative materials for SCALPEL...
Journal of Vacuum Science & Technology B | 1985
Mark A. Hartney; Anthony E. Novembre; Frank S. Bates
A bilayer resist system is demonstrated using chlorinated polymethylstyrene‐polydimethylsiloxane (CPMS/DMS) block copolymers. The copolymers are prepared using anionic polymerization techniques and are subsequently sensitized to electron beam, and 250–300 nm radiation by preferential chlorination of the polymethylstyrene block. The electron lithographic performance of a block copolymer containing 15.5 wt. % silicon, 0.58 chlorines per methylstyrene unit (total Mw=8.7×104) and polydispersity=1.3 was determined to exhibit a sensitivity (D0.5g)=0.9 μC/cm2, and contrast=1.3. The etch ratio compared to the HPR‐204 planarizing layer was 13.5 : 1 with an observed resolution range of 0.75 to 1.0 μm. These results derive from the intrinsic behavior of block copolymers, which provides for the synergistic combination of inherently distinct polymer species while avoiding macroscopic phase separation prevalent in homopolymer blends. The concept of utilizing block copolymers as resists is general and may be extended t...
Journal of Vacuum Science & Technology B | 1999
Leonidas E. Ocola; D. M. Tennant; G. Timp; Anthony E. Novembre
As the semiconductor community continues to follow the Semiconductor Industry Association Roadmap, resist structures are being printed further into the nanometer domain. However, a persistent issue for successful sub-60 nm resist patterning is mechanical stability at high aspect ratios. The objective of this article is to understand what processing conditions facilitate processing resist nanostructures with useful aspect ratios for the fabrication of sub-60 nm transistors. We have found that, in aqueous based development and rinse, if the resist thickness is reduced, then the aspect ratio is sacrificed for the sake of resolution. The implication is that there is a resolution limit at which resist structures will have aspect ratios that are useful for device fabrication. We have also found that there are development effects that occur in the thick film regime that are not reproducible with thin films. The best resolution structures we have been able to print are lines of 28 nm in width using direct write e...
Journal of Vacuum Science & Technology B | 1991
Charles W. Jurgensen; R. R. Kola; Anthony E. Novembre; W. W. Tai; J. Frackoviak; L. E. Trimble; G. K. Celler
A subtractive process to form subhalf micron, vertical‐walled patterns in half‐micron thick tungsten on x‐ray masks has been developed. Electron‐beam lithography was used to form resist patterns on a structure consisting of 300 A Cr on 5000 A W on 200 A Cr on an approximately 1 μm thick poly‐silicon or silicon nitride membrane. The Cr masking and etch‐stop layers above and below the W layer are required because the resist and membrane materials etch rapidly in fluorine based W etching plasmas. Chromium was chosen for these layers because it has a high selectivity in the W etch (≊40:1), is compatible with the W deposition process, and can be patterned in an O2–Cl2 plasma which does not etch W or the membrane materials. Helium backside cooling at a pressure from 1 to 5 Torr controls membrane temperature during all plasma processing steps. Pure CBrF3 or CHF3 etch W slowly while simultaneously depositing polymer which produces sloping profiles where the base of the feature is wider than the initial mask width...
Journal of Vacuum Science & Technology B | 1985
M. A. Hartney; R. G. Tarascon; Anthony E. Novembre
Chlorinated polymethylstyrene has been shown to behave as a negative resist upon electron beam exposure. Polymethylstyrene was prepared by both anionic and free radical techniques and chlorinated to produce a series of polymers with a range from 0 to 2.5 chlorine atoms per polymer repeat unit (0 to 42.5 wt. % chlorine). Sensitivity and contrast were found to be a function of chlorine content, molecular weight, and polydispersity. Sensitivity was maximum for materials with 0.6 to 0.9 chlorine atoms per repeat unit, depending on the chlorination technique chosen. Nearly monodisperse polymers exhibited much higher contrast than broader molecular weight materials and showed improved resolution. Thermogravimetric analysis was employed to study solvent removal from spun films and to determine prebaking and postbaking conditions. A chlorinated polymethylstyrene (0.92 chlorines/monomer unit) with a molecular weight of 70 000 and polydispersity of 1.06 had a sensitivity of 2.0 μC/cm2 and contrast of 2.0. This mate...
Journal of Vacuum Science & Technology B | 1997
Elsa Reichmanis; Omkaram Nalamasu; F. M. Houlihan; T. I. Wallow; Allen G. Timko; Raymond A. Cirelli; Gary Dabbagh; Richard S. Hutton; Anthony E. Novembre; B. W. Smith
Photolithography using 193 nm radiation is the leading candidate for the manufacture of 0.18–0.13 μm design rule devices. The optical absorption of materials such as novolacs, and functionalized poly(hydroxystyrenes) and styrene-acrylate copolymers which are the matrix materials of choice for G line, I line, and 248 nm lithography is significantly higher than one at 193 nm making them too opaque to be useful at this shorter wavelength. The opacity of the current photoresists at 193 nm requires innovation in designing alternative materials and processes to realize the full potential of 193 nm (ArF) lithography. From a materials standpoint, this challenge must be addressed by new chemistries and process schemes capable of providing resists with the aqueous base solubility, etching resistance, resolution, photospeed, and process latitude required for large-scale manufacturing. In addition, regulatory constraints on volatile organic chemical emissions have spurred efforts to design revolutionary resist platfo...
Journal of Vacuum Science & Technology B | 1996
L. R. Harriott; Steven D. Berger; C. Biddick; Myrtle I. Blakey; S. W. Bowler; K. Brady; R. M. Camarda; W. F. Connelly; A. Crorken; J. Custy; R. Dimarco; Reginald C. Farrow; J. Felker; Linus A. Fetter; R. Freeman; L. Hopkins; H. A. Huggins; C. S. Knurek; J. S. Kraus; James Alexander Liddle; M. Mkrtychan; Anthony E. Novembre; Milton L. Peabody; R. G. Tarascon; H. H. Wade; W. K. Waskiewicz; G. P. Watson; K. S. Werder; D. L. Windt
We have designed and constructed a proof‐of‐concept projection electron beam lithography system based on the scattering with angular limitation projection electron beam lithography principle. In this system, a thin membrane mask is used in a 4:1 reduction projection system at 100 keV. Image contrast is formed by scattering in the mask and subsequent aperturing of the scattered electrons in the back focal plane of the projection system. We have employed a step‐and‐scan architecture which uses continuously moving mask and wafer stages to trace out the full pattern. The electron beam can thus be kept small (1×1 mm in our case) which greatly simplifies the design of the electron optical system. In addition, the membrane areas can be kept small in linear dimension in one direction, minimizing in‐plane pattern distortions. Our system will be constructed in two stages. In the first stage, the mask stage is static and the wafer stage operates in step‐and‐repeat mode. This initial version of the system allows for ...