Anthony J. Ciani

MWIR imaging with low cost colloidal quantum dot films

Suspensions of HgTe colloidal quantum dots (CQD) are readily synthesized with infrared energy gaps between 3 and 12 microns. Infrared photodetection using dried films of these CQDs has been demonstrated up to a cutoff wavelength of 12 microns. The synthesis of CQDs and the fabrication of detector devices employ bench-top chemistry techniques, leading to the potential for the easy manufacture of infrared photon detecting imagers at low cost. Recent electrical and optical measurements of these CQD films are discussed. Recent successful prototypes of complete focal plane arrays from CQD films and commercially-available ROICs are also described.

Molecular dynamics growth modeling of InAs1−xSbx-based type-II superlattice

Abstract. Type-II strained-layer superlattices (T2SL) based on InAs1−xSbx are a promising photovoltaic detector material technology for thermal imaging; however, Shockley–Read–Hall recombination and generation rates are still too high for thermal imagers based on InAs1−xSbx T2SL to reach their ideal performance. Molecular dynamics simulations using the Stillinger–Weber (SW) empirical potentials are a useful tool to study the growth of tetrahedral coordinated crystals and the nonequilibrium formation of defects within them, including the long-range effects of strain. SW potentials for the possible atomic interactions among {Ga, In, As, Sb} were developed by fitting to ab initio calculations of elastically distorted zinc blende and diamond unit cells. The SW potentials were tested against experimental observations of molecular beam epitaxial (MBE) growth and then used to simulate the MBE growth of InAs/InAs0.5Sb0.5 T2SL on GaSb substrates over a range of processes parameters. The simulations showed and helped to explain Sb cross-incorporation into the InAs T2SL layers, Sb segregation within the InAsSb layers, and identified medium-range defect clusters involving interstitials and their induction of interstitial-vacancy pairs. Defect formation was also found to be affected by growth temperature and flux stoichiometry.

Non-orthogonal tight-binding model for tellurium and selenium

Abstract The twofold coordinated heavier group-VI elements tellurium and selenium with the trigonal crystal structure have unshared electron pairs (lone pairs) which control the interplay of the intra- and inter-chain interactions and their sensitivity on pressure and temperature. We have developed tight-binding (TB) parameters for the helical structures of tellurium and selenium using the Naval Research Laboratory Tight-Binding (NRL-TB) method. The TB parameters were derived by fitting to the band structures and total energies of density functional theory (DFT) calculations. We have applied the TB parameters to study the phase stabilities of different structures under hydrostatic pressure. We have predicted (without fitting) the volume dependence of the rhombohedral and diamond structures, the bcc to rhombohedral and rhombohedral to simple cubic phase transitions and the elastic constants of the trigonal structures, all in agreement with ab initio and experimental results. While the results for the unrelaxed vacancy formation energies and surface energies are in good agreement with the DFT values, we find large discrepancies for the relaxed values indicating that the present set of TB parameters cannot accurately capture the inter-chain interactions.

Atomic-scale modeling of InxGa1−xN quantum dot self-assembly

The authors simulate in three dimensions the molecular beam epitaxial growth of InxGa1−xN with classical molecular dynamics. Atomic interactions are simulated with Stillinger–Weber potentials. Both homoepitaxial and heteroepitaxial growths are studied. The effects of substrate temperature and indium concentration on quantum dot morphology, concentration profiles, and the thickness of wetting layers qualitatively agree with experimental findings. The authors’ simulations support earlier suggestions that quantum dot formation in the InGaN/GaN system is governed by a stress-driven phase separation mechanism.

Colloidal quantum dots for low-cost MWIR imaging

Monodisperse suspensions of HgTe colloidal quantum dots (CQD) are readily synthesized with infrared energy gaps between 3 and 12 microns. Infrared photodetection using dried films of these CQDs has been demonstrated up to a wavelength of 12 microns, and HgTe CQD single-elemnet devices with 3.6 micron cutoff have bee nreported nad show ogod absorption <(10^4 cm^-1), response time and detectivity (2*10^10 Jones) at at emperature of 175 K; with the potential fo uncooled imaging. The synthesis of CQDs and fabrication of detector devices employ bench-top chemistry techniques, leading to the potential for rapid, wafer-scale manufacture of MWIR imaging devices with low production costs and overhead. The photoconductive, photovoltaic and optical properties of HgTe CQD films will be discussed relative to infrared imaging, along with recent achievements in integrating CQD films with readout integrated circuits to produce CQD-based MWIR focal plane arrays.

Advances in low-cost infrared imaging using II-VI colloidal quantum dots (Conference Presentation)

II-VI colloidal quantum dots (CQDs) have made significant technological advances over the past several years, including the world’s first demonstration of MWIR imaging using CQD-based focal plane arrays. The ultra-low costs associated with synthesis and device fabrication, as well as compatibility with wafer-level focal plane array fabrication, make CQDs a very promising infrared sensing technology. In addition to the benefit of cost, CQD infrared imagers are photon detectors, capable of high performance and fast response at elevated operating temperatures. By adjusting the colloidal synthesis, II-VI CQD photodetectors have demonstrated photoresponse from SWIR through LWIR. We will discuss our recent progress in the development of low cost infrared focal plane arrays fabricated using II-VI CQDs.

HgTe colloidal quantum dot LWIR infrared photodetectors

The majority of modern infrared photon imaging devices are based on epitaxially grown bulk semiconductor materials. Colloidal quantum dot (CQD)-based infrared devices provide great promise for significantly reducing cost as well as significantly increased operating temperatures of infrared imaging systems. In addition, CQD-based infrared devices greatly benefit from band gap tuning by controlling the CQD size rather than the composition. In this work, we investigate the absorption coefficient of HgTe CQD films as a function of temperature and cutoff wavelength. The optical absorption properties are predicted for defect-free HgTe films as well as films which vary from ideal.