Anthony M. Pavio

Microwave Circuit Design Using Linear and Nonlinear Techniques: Vendelin/Microwave Circuit Design Using Linear and Nonlinear Techniques

Foreword by David Leeson. Preface. 1. RF/Microwave Systems. 2. Lumped and Distributed Elements. 3. Active Devices. 4. Two-Port Networks. 5. Impedance Matching. 6. Microwave Filters. 7. Noise in Linear Two-Ports. 8. Small- and Large-Signal Amplifier Design. 9. Power Amplifier Design. 10. Oscillator Design. 11. Microwave Mixer Design. 12. RF Switches and Attenuators. 13. Microwave Computer-Aided Workstations foor MMIC Requirements. Appendix A: BIP: Gummel-Poon Bipolar Transistor Model. Appendix B: Level 3 MOSFET. Appendix C: Noise Parameters of GaAs MESFETs. Appendix D: Derivations for Unilateral Gain Section. Appendix E: Vector Representation of Two-Tone Intermodulation Products. Appendix F: Passive Microwave Elements. Index.

Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications

Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF designers to develop high power high efficiency very broadband power amplifiers for military applications. Several prototypes of 10-40 W GaN based distributed power amplifiers, including MMIC distributed PA, are currently under the development at Rockwell Collins, Inc. In this paper, we will discuss the results of a 10 W distributed power amplifier with the maximum power output of more than 40 dBm and a power-added efficiency of 30-70% over the bandwidth of 20-2000 MHz.