Antia S. Botana

Magnetotransport of single crystalline YSb

We report transport measurement in zero and applied magnetic field on a single crystal of NbAs. Transverse and longitudinal magnetoresistance in the plane of this tetragonal structure does not saturate up to 9 T. In the transverse configuration (H ∥ c, I ⊥ c) it is 230,000% at 2 K. The Hall coefficient changes sign from hole-like at room temperature to electron-like below ∼150 K. The electron carrier density and mobility calculated at 2 K based on a single band approximation are 1.8 × 10(19) cm(-3) and 3.5 × 10(5) cm(2) Vs(-1), respectively. These values are similar to reported values for TaAs and NbP, and further emphasize that this class of noncentrosymmetric, transition-metal monopnictides is a promising family to explore the properties of Weyl semimetals and the consequences of their novel electronic structure.

Origin of the extremely large magnetoresistance in the semimetal YSb

Electron-hole (

Electronic structure of CrN: A comparison between different exchange correlation potentials

e\ensuremath{-}h

Non-one-dimensional behavior in charge-ordered structurally quasi-one-dimensional Sr6Co5O15

) compensation is a hallmark of multiband semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with nonsaturating magnetoresistance is uncompensated, questioning the

Strain effects to optimize thermoelectric properties of hole-doped La2NiO4+δviaab initiocalculations

e\ensuremath{-}h

Separation of electron and hole dynamics in the semimetal LaSb

compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle-dependent Shubnikov--de Haas (SdH) quantum oscillation measurements that YSb does have nearly perfect

Fermiology and magnetism in weak itinerant ferromagnet CoS2: an ab initio study

e\ensuremath{-}h

Electronic structure of V4O7: charge ordering, metal-insulator transition and magnetism

compensation, with a density ratio of

Disturbing the dimers: Electron and hole doping in the intermetallic insulator FeGa 3

\ensuremath{\sim}0.95

Enhanced thermoelectric response of hole-doped La2NiO4+δ from ab initio calculations

for electrons and holes. The density and mobility anisotropy of the charge carriers revealed in the SdH experiments allow us to quantitatively describe the magnetoresistance with an anisotropic multiband model that includes contributions from all Fermi pockets. We elucidate the role of compensated multibands in the occurrence of XMR by demonstrating the evolution of calculated magnetoresistances for a single band and for various combinations of electron and hole Fermi pockets.