Antoine Fleurence

Tuning of silicene-substrate interactions with potassium adsorption

The evolution of the electronic structure and the structural stability of epitaxial silicene on ZrB2(0001) thin films exposed to K atoms has been studied by angle-resolved photoelectron spectroscopy and low-energy electron diffraction. Potassium adsorption leads to charge donation to the silicene lattice, which is accompanied by the partial filling of a formerly unoccupied π* band and by the increasing hybridization between the diboride surface state and the lower branch of the back-folded π band. The results allow an identification of silicene-derived π electronic states and confirm that before K adsorption, the interactions at the silicene-substrate interface are rather weak.

Surface electronic structure of ZrB2 buffer layers for GaN growth on Si wafers

The electronic structure of epitaxial, predominantly single-crystalline thin films of zirconium diboride (ZrB2), a lattice-matching, conductive ceramic to GaN, grown on Si(111) was studied using angle-resolved ultraviolet photoelectron spectroscopy. The existence of Zr-derived surface states dispersing along the Γ¯-M¯ direction indicates a metallic character provided by a two-dimensional Zr-layer at the surface. Together with the measured work function, the results demonstrate that the surface electronic properties of such thin ZrB2(0001) buffer layers are comparable to those of the single crystals promising excellent conduction between nitride layers and the substrate in vertical light-emitting diodes on economic substrates.

Diverse forms of bonding in two-dimensional Si allotropes: Nematic orbitals in the MoS 2 structure

The interplay of

Core level excitations—A fingerprint of structural and electronic properties of epitaxial silicene

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Microscopic origin of the π states in epitaxial silicene

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Stacks of nucleic acids as molecular wires: direct measurement of the intermolecular band dispersion in multilayer guanine assemblies.

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Single-domain epitaxial silicene on diboride thin films

-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS

Insights into the spontaneous formation of silicene sheet on diboride thin films

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Single-particle excitation of core states in epitaxial silicene

layer is found to possess a lower total energy than low-buckled silicene and to be stable in terms of its phonon dispersion relations. A new set of cigar-shaped, nematic orbitals originating from the Si

Self-organized metallic islands on nano-patterned silicon substrate

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