April D. Schricker

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

DAMASCENE PROCESS FOR CARBON MEMORY ELEMENT WITH MIIM DIODE

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

Memory cell with planarized carbon nanotube layer and methods of forming the same

Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same

DAMASCENE INTEGRATION METHODS FOR GRAPHITIC FILMS IN THREE-DIMENSIONAL MEMORIES AND MEMORIES FORMED THEREFROM

Carbon nano-film reversible resistance-switchable elements and methods of forming the same

Carbon-based interface layer for a memory device and methods of forming the same