Arash Dehzangi

Preparation, Characterization and Thermal Degradation of Polyimide (4-APS/BTDA)/SiO2 Composite Films

Polyimide/SiO2 composite films were prepared from tetraethoxysilane (TEOS) and poly(amic acid) (PAA) based on aromatic diamine (4-aminophenyl sulfone) (4-APS) and aromatic dianhydride (3,3,4,4-benzophenonetetracarboxylic dianhydride) (BTDA) via a sol-gel process in N-methyl-2-pyrrolidinone (NMP). The prepared polyimide/SiO2 composite films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and thermogravimetric analysis (TGA). The FTIR results confirmed the synthesis of polyimide (4-APS/BTDA) and the formation of SiO2 particles in the polyimide matrix. Meanwhile, the SEM images showed that the SiO2 particles were well dispersed in the polyimide matrix. Thermal stability and kinetic parameters of the degradation processes for the prepared polyimide/SiO2 composite films were investigated using TGA in N2 atmosphere. The activation energy of the solid-state process was calculated using Flynn–Wall–Ozawa’s method without the knowledge of the reaction mechanism. The results indicated that thermal stability and the values of the calculated activation energies increased with the increase of the TEOS loading and the activation energy also varied with the percentage of weight loss for all compositions.

Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed and optimized in the present work compared to our previous works. The output, transfer characteristics and drain conductance of both structures were compared. The trend for both devices found to be the same but differences in subthreshold swing, ‘on/off’ ratio, and threshold voltage were observed. The devices are ‘on’ state when performing as the pinch off devices. The positive gate voltage shows pinch off effect, while the negative gate voltage was unable to make a significant effect on drain current. The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal.

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging.

Optical Properties of CdS/PVA Nanocomposite Films Synthesized using the Gamma-Irradiation-Induced Method

Monodispersed spherical CdS nanoparticles embedded into polyvinyl alcohol (PVA) films are synthesized by using an in-situ gamma-irradiation-induced method. The formation mechanism of CdS nanoparticles capped by two united cells of PVA is purposed by means of surrounding the CdS nanoparticles with OH bonds of the PVA chain. CdS nanoparticles are found to possess an unusual orthorhombic structure in monoclinic crystalline PVA. The polymer matrix affords protection from agglomeration and controls the particle size. It is found that the distribution of the prepared nanoparticles increases and a narrower size distribution is observed when the gamma radiation is varied from 10 to 50 kGy. While the average size of the nanoparticles is found to be less affected by the variation of the gamma radiation doses. The size range of the synthesized nanoparticles is 14±1 nm. The optical absorption spectra of synthesized CdS nanoparticles in a polymer matrix reveal the blue shift in the band gap energy with respect to CdS bulk materials owing to quantum confinement effect. The photoluminescence study of nanocomposite films shows the green emission arising from the crystalline defects.

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography.

Summary A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (1015) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is normally in the on state and is driven into the off state by the application of a positive gate voltage. We demonstrate that the depletion starts from the bottom corner of the channel facing the gates and expands toward the center and top of the channel. Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current.

Silver Nanoparticle Fabrication by Laser Ablation in Polyvinyl Alcohol Solutions

A laser ablation technique is applied for synthesis of silver nanoparticles in different concentrations of polyvinyl alcohol (PVA) aqueous solution. The ablation of high pure silver plate in the solution is carried out by a nanosecond Q-switched Nd:YAG pulsed laser. X-ray diffraction and transmission electron microscopy are implemented to explore the particles sizes. The effects of PVA concentrations on the absorbance of the silver nanoparticles are studied as well, by using a UV-vis spectrophotometer. The preparation process is carried out for deionized water as a reference sample. The comparison of the obtained results with the reference sample shows that the formation efficiency of nanoparticles in PVA is much higher and the sizes of particles are also smaller.

Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (1015 cm−3) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The impact of contributing parameters in oxidation such as tip materials, applying voltage on the tip, relative humidity and exposure time are studied. The effect of the etchant concentration (10% to 30% wt) of potassium hydroxide and its mixture with isopropyl alcohol (10%vol. IPA ) at different temperatures on silicon surface are expressed. For different KOH concentrations, the effect of etching with the IPA admixture and the effect of the immersing time in the etching process on the structure are investigated. The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity.

Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography

The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Nanoengineered thin films of copper for the optical monitoring of urine – a comparative study of the helical and columnar nanostructures

The use of nanoengineered metallic complex mediums in the monitoring of urine is investigated in this study. As to the mediums used, nanoscaled thin films comprised of (i) copper nanohelix structures of two different numbers of helical turns and (ii) columnar thin films of copper nanorods of two different slanting angles grown over planar glass surface – a dielectric medium – are taken into account. Turbadar–Kretschmann–Raether (TKR) configuration is used to couple light with the metallic nanoengineered thin films, and the absorption spectra are monitored corresponding to two different optical wavelengths. The void regions in nanoengineered metallic films are filled up with urine as the analyte, which causes to alter the constitutive properties, resulting thereby shifts in the peaks in absorption spectra. Prominent shifts in absorption peaks corresponding to nanoengineered mediums infiltrated with urine essentially confirm prudent optical sensing characteristics of the devices under consideration.