Aria Yang

Oxygen-defect-induced magnetism to 880 K in semiconducting anatase TiO2−δ films

We demonstrate a semiconducting material, TiO2??, with ferromagnetism up to 880?K, without the introduction of magnetic ions. The magnetism in these films stems from the controlled introduction of anion defects from both the film?substrate interface as well as processing under an oxygen-deficient atmosphere. The room-temperature carriers are n-type with n~3 ? 1017?cm?3. The density of spins is ~1021?cm?3. Magnetism scales with conductivity, suggesting that a double exchange interaction is active. This represents a new approach in the design and refinement of magnetic semiconductor materials for spintronics device applications.

Ba-hexaferrite films for next generation microwave devices (invited)

Next generation magnetic microwave devices require ferrite films to be thick (>300μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.

Ferromagnetism in pure wurtzite zinc oxide

The ferromagnetism induced by the intrinsic point defects in wurtzite zinc oxide is studied by using ab initio calculation based on density functional theory. The calculations show that both oxygen interstitial and zinc vacancy may induce ferromagnetism into this material. The calculations also show that zinc oxide with oxygen interstitial may be a ferromagnetic semiconductor. Based on the simplified electronic configuration of the defect molecules, we explain the total magnetic moment, electronic structure, and ferromagnetism.

Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)‖SiC (0001) with low ferromagnetic resonance linewidths

Barium hexaferrite (BaM) films were deposited on 10nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe12O19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16900Oe, a magnetization (as 4πMs) of 4.4kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53GHz of 96Oe, thus demonstrating sufficient properties for microwave device applications.

Computational study of copper ferrite (CuFe2O4)

Magnetic properties and electronic structure of copper ferrites in both normal and inverse spinel structures are studied using a principle spin-polarized band structure calculation method with a modified Becke’s three-parameter exchange correlation. The calculated exchange constants show that the Neel configuration may be unstable for both normal and inverse structures. The local magnetic moments are calculated using Mulliken population analysis and show that the normal structure may achieve very high magnetization. The calculated density of states show that copper ferrite in both normal and inverse spinel structure may be half metallic.

Large induced magnetic anisotropy in manganese spinel ferrite films

The oxygen pressure dependence of magnetic anisotropy in pulse laser deposited manganese ferrite (MnFe2O4) films was investigated. Magnetic anisotropy fields (Ha) are shown to exceed 5kOe when films were processed at oxygen pressures below 5mTorr. Further, it is shown that the magnetically preferred direction of Ha can be aligned either along the film plane (pO2 8mTorr). The ability to induce large perpendicular magnetic anisotropy in spinel ferrites allows for new applications (i.e., phase shifters, filters, isolators, and circulators) near or above X-band frequencies to be considered.

Enhanced Néel temperature in Mn ferrite nanoparticles linked to growth-rate-induced cation inversion

Mn ferrite (MnFe(2)O(4)) nanoparticles, having diameters from 4 to 50 nm, were synthesized using a modified co-precipitation technique in which mixed metal chloride solutions were added to different concentrations of boiling NaOH solutions to control particle growth rate. Thermomagnetization measurements indicated an increase in Néel temperature corresponding to increased particle growth rate and particle size. The Néel temperature is also found to increase inversely proportionally to the cation inversion parameter, delta, appearing in the formula (Mn(1-delta)Fe(delta))(tet)[Mn(delta)Fe(2-delta)](oct)O(4). These results contradict previously published reports of trends between Néel temperature and particle size, and demonstrate the dominance of cation inversion in determining the strength of superexchange interactions and subsequently Néel temperature in ferrite systems. The particle surface chemistry, structure, and magnetic spin configuration play secondary roles.

Cation-disorder-enhanced magnetization in pulsed-laser-deposited CuFe2O4 films

Copper ferrite films have been deposited on (100) MgO substrates by pulsed-laser deposition. The oxygen pressure used in deposition was varied from 1to120mTorr with the substrate temperature fixed at 700°C. Magnetization values are measured to increase with oxygen pressure, reaching a maximum value of 2480G, which is a 42% increase over the bulk equilibrium value. Extended x-ray absorption spectroscopy shows that the Cu cation inversion δ [defined as (Cu1−δFeδ)tet[CuδFe2−δ]octO4] decreases monotonically from 0.72 to 0.55 with increasing saturation magnetization.

Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition

First principles band structure calculations suggest that the preferential occupation of Ni2+ ions on the tetrahedral sites in NiFe2O4 would lead to an enhancement of the exchange integral and subsequently the Neel temperature and magnetization. To this end, we have deposited NiFe2O4 films on MgO substrates by pulsed laser deposition. The substrate temperature was varied from 700to900°C at 5mTorr of O2 pressure. The films were annealed at 1000°C for different times prior to their characterization. X-ray diffraction spectra showed either (100) or (111) orientation with the spinel structure dependent on the substrate orientation. Magnetic studies showed a magnetization value of 2.7kG at 300K. The magnetic moment was increased to the bulk value as a result of postdeposition annealing at 1000°C. The as produced films show that the ferromagnetic resonance linewidth at 9.61GHz was 1.5kOe, and it was reduced to 0.34kOe after postannealing at 1000°C. This suggests that the annealing led to the redistribution of N...

Large tunability of Néel temperature by growth-rate-induced cation inversion in Mn-ferrite nanoparticles

The tuning of Neel temperature by greater than 100 K in nanoparticle Mn-ferrite was demonstrated by a growth-rate-induced cation inversion. Mn-ferrite nanoparticles, having diameters from 4 to 50 nm, were synthesized via coprecipitation synthesis. The Neel temperature (TN) increased inversely to the cation inversion parameter, δ (i.e., defined as (Mn1−δFeδ)tet[MnδFe2−δ]octO4). Concomitantly, TN increased with increased particle growth rate and particle size. These results unambiguously establish cation inversion as the dominant mechanism in modifying the superexchange leading to enhanced TN. The ability to tailor TN enables greater flexibility in applying nanoparticle ferrites in emerging technologies.