Arindam Biswas
Asansol Engineering College
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Publication
Featured researches published by Arindam Biswas.
Journal of Circuits, Systems, and Computers | 2018
Heranmoy Maity; Arijit Kumar Barik; Arindam Biswas; Anup Kumar Bhattacharjee; Anita Pal
In this paper, we have proposed a new reversible logic gate (NG) and also the quantum cost (QC), garbage outputs, delay optimized reversible combinational logic circuits such as four bit 2’s complement code converter circuit, BCD to Excess-3 code converter using reversible logic gate. The proposed NG is used to design a four bit 2’s complement code converter circuit, BCD to Excess-3 code converter and realization of different logic functions such as NOT, AND, NAND, OR, NOR, XOR, NXOR. The proposed (new reversible logic) gate is represented by quantum implementation. The proposed work is verified by Xilinx-ISE simulator software and others logic circuits are also verified. The QC of proposed gate is 5. The QC of four bit 2’s complement code converter and BCD to Excess-3 code converter are 11 and 14 which are better with respect to previous reported results.
International Journal of Quantum Information | 2018
H. Maity; Arindam Biswas; Anup Kumar Bhattacharjee; Anita Pal
In this paper, we have proposed the design of quantum cost (QC) optimized 4-bit reversible universal shift register (RUSR) using reduced number of reversible logic gates. The proposed design is ver...
Iete Journal of Research | 2018
Prasit Kumar Bandyopadhyay; Arindam Biswas; Anup Kumar Bhattacharjee; Aritra Acharyya
ABSTRACT The influence of inter-carrier scattering phenomena on the noise performance of double-drift region (DDR) impact avalanche transit time diodes has been investigated. Three optimized Si DDR diode structures operating at 94, 140 and 220 GHz have been taken into account for this study. A newly reported analytical model of the ionization rates has been incorporated in the simulation in order to consider the effect of inter-carrier scattering inside the active region of the diodes and the noise performance of those have been evaluated by calculating the noise spectral density and noise measure around respective operating frequency bands. Results show that the noise performances of those are drastically worsened due to the aforementioned effect. The said deterioration has been found to be monotonically increasing in nature with the working frequency.
2017 Devices for Integrated Circuit (DevIC) | 2017
Heranmoy Maity; Arindam Biswas; Anup Kr. Bhattacherjee; Anita Pal
This paper proposed the design of quantum cost efficient 4-bit reversible universal shift register(RUSR) using existing reversible logic gates. The proposed design is very useful in quantum computing due to its low quantum cost, less no. of reversible logic gate and low garbage outputs. The quantum cost(QC), garbage output(GO), number of gates are respectively 68, 20 and 16 for proposed work.
2017 Devices for Integrated Circuit (DevIC) | 2017
Prasit Kumar Bandyopadhyay; Arindam Biswas; Anup Kumar Bhattacharjee; Aritra Acharyya
The effect of energy-loss due to electron-electron (e-e) and hole-hole (h-h) collisions on the avalanche noise performance of IMPATT diodes has been studied. Simulations have been carried out on DDR Si IMPATTs operating at 94, 140 and 220 GHz. Simulation results show that the noise measure of the diodes considerably increases due to e-e and h-h interactions within the space charge layer of the device. This is observed to be more influential at higher mm-wave frequencies.
2017 Devices for Integrated Circuit (DevIC) | 2017
Somrita Ghosh; Prasit Kumar Bandyopadhyay; Arindam Biswas; Anup Kumar Bhattacharjee; Aritra Acharyya
The avalanche noise performance of multiple quantum well (MQW) DDR IMPATT devices has been investigated. A self-consistent quantum drift-diffusion (SCDD) model is used for the simulation study. The noise performance of one Si based flat and two Si∼3C-SiC MQW DDRs have been studied in this paper. Results indicate that considerable low noise operation with high power output can be obtained at W-band by using the Si∼3C-SiC MQW DDR structures.
2017 Devices for Integrated Circuit (DevIC) | 2017
Sukanta Mondal; Partha Banerjee; Rajesh Mukherjee; Arindam Biswas; Anita Pal; Anup Kumar Bhattacharjee
In this paper, we present a two phase cooperative relaying scheme for spectrum sharing in a 2 × 2 overlay cognitive radio. Secondary transmitter acts as decode and forward relay to the primary and employs hierarchical modulation to enhance primary SNR reception. Primary receiver employs cooperative maximal ratio combining to improve SNR and secondary receiver recovers its own data by successive interference cancellation. We have calculated symbol error rate (SER) analytically for such system and optimal power allocation factor between primary and secondary data in hierarchical modulation have been found out. The analytical result of SER is found close agreement with Monte-Carlo simulation.
2016 International Conference on Computer, Electrical & Communication Engineering (ICCECE) | 2016
Partha Banerjee; Qing Hao; Arindam Biswas; Anup Kumar Bhattacharjee; Aritra Acharyya
Influences of magnetic field on the noise performance of double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si designed to operate within W-band (75–110 GHz) have been studied in this paper. The reverse biased DDR IMPATT structure under transverse magnetic field can be regarded as magnetic field tunable avalanche transit time (MAGTATT) device. The simulation results show that both the noise spectral density and noise measure of the device increase significantly while the device is kept in transverse magnetic field. This degradation of the noise performance of the device enhances when the magnitude of the magnetic field is increased. Therefore, in order to achieve the magnetic field tuning of the RF properties of DDR IMPATTs as reported earlier by the authors, the noise performance of the source has to be sacrificed in fair extent.
Archive | 2013
Prasit Kumar Bandyopadhyay; Arindam Biswas; Pramit Kumar Bandyopadhyay; Durbadal Mandal; Rajib Kar
Journal of Computational Electronics | 2016
Partha Banerjee; Aritra Acharyya; Arindam Biswas; Anup Kumar Bhattacharjee