Arisa Yamada

Highly sensitive positive-working molecular resist based on new molecule

A highly sensitive positive-working molecular resist based on a new molecule, 1,3,5-tris[p-(p-hydroxyphenyl)-phenyl]benzene (THTPPB), was designed and synthesized. THTPPB showed a high glass transition temperature (Tg) of 145°C. Some acid-leaving groups were attached to THTPPB to realize positive-working performance developed by an alkaline aqueous developer. 70nm line-and-space (1:1) positive tone pattern was fabricated with high sensitivity (<1μC∕cm2) by the exposure to a low-energy electron beam (5keV).

Removal of phenol from saline water by polyamine chelating resin.

Removal of phenol from saline water was carried out with chelating resin. A polyamine chelating resin, Diaion CR-20, removed phenol compounds selectively from industrial wastewater containing 2% salt. From saline water containing 20 mg/L phenol, 70% of the phenol was removed. After treatment, phenol was eluted from the resin by aqueous NaOH, and the resin could also be regenerated by heating in air. Diaion CR-20 adsorbed phenol even in the presence of FeCl3, indicating that treatment with this resin of wastewater containing metal can remove phenol and metal cations in a single step.

High resolution positive-working molecular resist attached with alicyclic acid-leaving group

Molecular resists are expected to offer the advantages of high resolution and low line width roughness (LWR) for the next-generation lithography. We developed a new molecular resist that showed high resolution by introducing an efficient acid-leaving group to an amorphous molecule, 1,3,5-Tris(p-(p-hydroxy- phenyl) phenyl) benzene (THTPPB). The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group, hyperlactyl vinyl ether group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch 36 nm line-and-space (1:1) positive pattern was fabricated using 100 keV EB with chemically amplified molecular resist based on HPVETPPB.