Arnel Salvador

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength

Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of the GaAs-AlGaAs core-shell yielded a wider THz emission bandwidth compared with that of just the GaAs core material. This result is currently attributed to faster carrier lifetimes in the AlGaAs shell. The THz emission spectral data are supported by time-resolved photoluminescence studies.

Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films

We report a detailed study on the valence band splitting in epitaxial lift-off (ELO) GaAs film bonded to silicon. The GaAs film used in this study was grown by molecular beam epitaxy on epiready GaAs (100) substrate. Variable temperature photoluminescence and reflectivity spectra were obtained for the as-grown film, the freestanding ELO film, and the ELO GaAs film bonded to silicon. The PL spectra for the GaAs film on Si showed the removal of the valence band degeneracy with the light hole and heavy hole transitions separated by 4.2meV at 10K and decreased monotonously to 1.6meV at 230K. No similar splitting was observed for the as-grown and freestanding films. The strain and stress were calculated at e=(1.2±0.04)×10−3 and X=0.8±0.05kbar, respectively, at 10K and e=(2.3±0.04)×10−4 and X=0.3±0.05kbar at 230K. The temperature dependence of the heavy hole–light hole separation energy indicated a strain-induced effect caused by the difference in the coefficient of thermal expansion between GaAs and Si. This s...

Gamma-ray irradiation effects on the optical properties of bulk ZnO single crystals

Hydrothermal-grown bulk ZnO single crystals are investigated before and after gamma-ray irradiation. The irradiation does not alter the optical transparency in the visible region. The gamma rays only induce modified near-band-edge UV emission with blue-shifted peaks and shortened response times. From the initial values before irradiation, the peaks shift by 5 to 6 nm, and the response times shorten by 140 to 440 ps. We attribute these observations to the radiation-induced defects on the bulk crystals. Our results nevertheless lead to the realization of short-wavelength ZnO scintillators that can be utilized in high-energy-radiation environments.

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Confined photocarrier transport in InAs pyramidal quantum dots via terahertz time-domain spectroscopy

We present experimental demonstration of photocarrier dynamics in InAs quantum dots (QDs) via terahertz (THz) time-domain spectroscopy (TDS) using two excitation wavelengths and observing the magnetic field polarity characteristics of the THz signal. The InAs QDs was grown using standard Stranski-Krastanow technique on semi-insulating GaAs substrate. Excitation pump at 800 nm- and 910 nm-wavelength were used to distinguish THz emission from the InAs/GaAs matrix and InAs respectively. THz-TDS at 800 nm pump revealed intense THz emission comparable to a bulk p-InAs. For 910 nm pump, the THz emission generally weakened and upon applying external magnetic field of opposite polarities, the THz time-domain plot exhibited anomalous phase-shifting. This was attributed to the possible current-surge associated with the permanent dipole in the QD.

Cherenkov-phase-matched nonlinear optical detection and generation of terahertz radiation via GaAs with metal-coating

Terahertz (THz) wave detection and emission via Cherenkov-phase-matched nonlinear optical effects at 1.55-μm optical wavelength were demonstrated using a GaAs with metal-coating (M-G-M) and bare GaAs as a reference sample in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). The metal-coated GaAs is superior to the bare wafer both as a THz electro-optic detector and as an emitter. Significant improvements in the detection and emission efficiency were obtained by utilizing a metal-coating due to better confinement and lower loss of the THz waves propagating in the M-G-M compared with bare GaAs.

Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters

We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 µm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs.

Photocarrier Transport and Carrier Recombination Efficiency in Vertically Aligned Si Nanowire Arrays Synthesized Via Metal-Assisted Chemical Etching

The carrier dynamics and recombination characteristics of vertically aligned silicon nanowires are investigated using terahertz emission and photoluminescence spectroscopy, respectively. It is observed that the presence of pores on the walls in two-step-synthesized silicon nanowires greatly affects the carrier dynamics, compared with nanowires synthesized using a one-step process. These pores become efficient carrier recombination sites wherein carriers are collected upon photoexcitation. Additionally, pores effectively diminish the surface electric field thereby inhibiting the terahertz emission. Finally, nanowire-length-dependent terahertz emission is observed only for the one-step-synthesized nanowires whereas the two-step-synthesized nanowire samples exhibited length dependence of their photoluminescence intensity.

Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitation

Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by femtosecond laser pulses having photon energy lower than the In2O3 bandgap. Terahertz (THz) pulse emission was observed using time domain spectroscopy. Results show that THz emission saturates at an excitation fluence of ~400 nJ/cm2. Even as two-photon absorption has been excluded, the actual emission mechanism has yet to be confirmed but is currently attributed to carriers due to weak absorption from defect levels that are driven by a strain field at the interface of the substrate and the grown film.