Arpit Khandelwal

Performance Evaluation of Integrated Semiconductor Ring Laser Gyroscope

We present a mathematical analysis and comparison of the performance of integrated on-chip semiconductor ring laser gyroscope (SRLG) fabricated using GaAs/AlGaAs and InP/InGaAsP technologies. The performance parameters of the gyro are modeled in terms of fundamental material, waveguide, and resonator parameters. In addition to this, influence of phenomena specific to semiconductor lasers such as nonlinear coupling, spatial hole burning, gain grating formation, and carrier induced index change on the gyro performance is also included. The analysis helps in identifying critical parameters, which must be optimized to improve the gyro performance.Best achievable performance of integrated SRLG is calculated, and design modifications are suggested to enhance it for high-performance military applications.

Rotation Sensing Through Semiconductor Ring Laser Gyro : Analyzed and Explained Using Photon Lifetime

This paper explains the importance of the role played by photon lifetime in the generation of terminal voltage across Semiconductor Ring Laser Gyroscope (SRLG). This terminal voltage can be used for direct measurement of rotation rate.

Mathematical model of nonlinear coupling and its effect on rotation sensitivity of semiconductor ring laser gyroscope

The moving population inversion gratings formed due to spatial hole burning inside a semiconductor ring laser gyroscope causes nonlinear coupling of the counter-traveling modes. We mathematically demonstrate this phenomenon using Perturbation Theory and calculate the limit imposed by it on the sensitivity of inertial rotation.

Lock-in elimination by orthogonal polarization in semiconductor Ring Laser Gyroscope

We propose a novel method to eliminate the lock-in in a Semiconductor Fiber Ring Laser Gyroscope by orthogonally polarizing the counter-traveling waves in the ring cavity. Orthogonal polarization reduces the coupling between the waves which prevents them from locking.

A novel method of rotation sensing by semiconductor ring laser gyroscope

We propose an alternate method to sense inertial rotation using semiconductor ring laser gyroscope (SRLG). We show that inertial rotation causes change in the magnitude of voltage across the terminals of semiconductor gain medium which can be measured externally to determine angular rotation velocity. The resonant oscillating frequency of the counter-traveling waves are not involved in the measurement which leads to elimination of lock-in in the gyro. The mathematical analysis and simulation results of the proposed method are also shown.