Artak Isoyan

Talbot lithography: Self-imaging of complex structures

The authors present a self-imaging lithographic technique, capable of patterning large area periodic structures of arbitrary content with nanoscale resolution. They start from the original concept of Talbot imaging of binary gratings—and introduce the generalized Talbot imaging (GTI) where periodic structures of arbitrary shape and content form high-definition self-images. This effect can be used to create the complex, periodic patterns needed in the many lithographic fabrication steps of modern semiconductor devices. Since the process is diffraction limited, the achievable resolution depends only on the wavelength, mask patterning, and degree of coherence of the source. Their approach removes all the complex extreme ultraviolet (EUV) reflective masks and optics, replacing them with nanopatterned transmission masks and makes the whole process simple and cost effective. They have successfully verified the GTI concept using first a He–Ne laser, and then demonstrated its potential as a nanolithography method using a compact table-top soft x-ray (EUV) 46.9nm laser source. These sources provide the high degree of coherence needed by diffraction-based imaging and are extendable to shorter wavelengths. They have recorded EUV GTI images up to the sixth Talbot plane, with consistent high quality good results, clearly demonstrating the ability of the GTI method to record high-resolution patterns at large distances.The authors present a self-imaging lithographic technique, capable of patterning large area periodic structures of arbitrary content with nanoscale resolution. They start from the original concept of Talbot imaging of binary gratings—and introduce the generalized Talbot imaging (GTI) where periodic structures of arbitrary shape and content form high-definition self-images. This effect can be used to create the complex, periodic patterns needed in the many lithographic fabrication steps of modern semiconductor devices. Since the process is diffraction limited, the achievable resolution depends only on the wavelength, mask patterning, and degree of coherence of the source. Their approach removes all the complex extreme ultraviolet (EUV) reflective masks and optics, replacing them with nanopatterned transmission masks and makes the whole process simple and cost effective. They have successfully verified the GTI concept using first a He–Ne laser, and then demonstrated its potential as a nanolithography method...

Defect-tolerant extreme ultraviolet nanoscale printing

We present a defect-free lithography method for printing periodic features with nanoscale resolution using coherent extreme ultraviolet light. This technique is based on the self-imaging effect known as the Talbot effect, which is produced when coherent light is diffracted by a periodic mask. We present a numerical simulation and an experimental verification of the method with a compact extreme ultraviolet laser. Furthermore, we explore the extent of defect tolerance by testing masks with different defect layouts. The experimental results are in good agreement with theoretical calculations.

4X reduction extreme ultraviolet interferometric lithography.

We report the initial results from a 4X reduction interferometric lithography technique using extreme ultraviolet (EUV) radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. We have extended traditional interferometric lithography by using 2(nd) diffraction orders instead of 1(st) orders. This change considerably simplifies mask fabrication by reducing the requirements for mask resolution. Interferometric fringes reduced by 4X (from 70 nm half-period grating to 17.5 nm) have been recorded in a 50 nm thick hydrogen silsesquioxane photoresist using 13.4 nm wavelength EUV radiation.

Extreme ultraviolet holographic lithography: Initial results

The authors report the initial results from a holographic lithography technique using extreme ultraviolet (EUV) radiation. This approach removes the need for complex EUV reflective masks and optics, replacing them with a binary, nanopatterned transmission mask. Computer generated holograms were fabricated on 100nm thick silicon nitride membranes with a 100nm thick chromium absorber layer. Reconstructed images have been recorded in an 80nm thick polymethylmetacrylate photoresist using 13nm wavelength EUV radiation from an undulator source. The pattern was characterized by optical and atomic force microscopies, and compared with simulation results from the TOOLSET diffraction simulation program, yielding excellent agreement.

Defect tolerant extreme ultraviolet lithography technique

A defect tolerant method of printing periodic structures with submicron resolution is presented. This technique is based on the self-imaging effect produced when a periodic semi-transparent mask is illuminated with coherent light. An analytical description of the effect, numerical simulations, and experimental evidence that is in good agreement with the theoretical analysis is presented. To explore the extent of defect tolerance, masks with different defect layouts were designed and tested.

Progress in extreme ultraviolet interferometric and holographic lithography

The Center for Nanotechnology has developed an advanced beamline dedicated to nanopatterning using the radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. Computer generated holograms and transmission interferometric gratings were fabricated and tested on the new extreme ultraviolet (EUV) exposure system. The authors have developed an accurate model, based on Fresnel-Kirchhoff integral diffraction theory, to analyze performance of real EUV interferometric and holographic lithography systems.

Analysis of a scheme for de-magnified Talbot lithography

The authors describe a photolithographic scheme based on the replication of a periodic transparent mask in a photoresist utilizing the coherent self-imaging Talbot effect. A periodic two-dimensional diffractive structure (or Talbot mask) composed of unit tiles distributed in a square matrix was illuminated by a coherent extreme ultraviolet (EUV) beam from a table top EUV laser. The illumination beam was reflected in a spherical mirror and the Talbot mask was placed in the path of the convergent beam. At designed locations determined by the Talbot distance, reduced replicas of the mask were obtained and used to print the slightly de-magnified copies of the mask on the surface of a photoresist. Experimental results showing the de-magnification effect are in good agreement with the diffraction theory. The limits of the technique are discussed.

Engineering study of extreme ultraviolet interferometric lithography

Extreme ultraviolet interferometric lithography (EUV-IL) is a powerful nanopatterning technique, exploiting the interference of two beams of short-wavelength radiation (13 nm) to form high-accuracy fringe patterns. Transmission diffraction gratings of appropriate period (40-100 nm) are used to form the beams; the substrate is located in the region of overlap to expose the photoresist material, recording 20-50 nm interference fringe patterns. Although the physics of EUV-IL is simple, its actual implementation is not and requires attention to detail in order to fully exploit the power of the technique. In order to understand the impact of realistic physical conditions on the performance of EUV-IL, we have developed a set of accurate numerical models based on the Rayleigh-Sommerfeld diffraction theory. These modeling tools are then applied to generate a complete and accurate analysis of EUV-IL, taking into account all the relevant physical processes, from finite extent of the gratings to the partial coherence of the source, and including detailed physical structure of the mask. The results are used to guide the design and implementation of EUV-IL exposure systems, down to the sub-11-nm range.

Progress in extreme ultraviolet interferometric lithography at the University of Wisconsin

Extreme Ultraviolet Interferometric lithography (EUV-IL) can generate periodic patterns useful to characterize photoresist materials and to create templates for self-assembled geometries. The Center for NanoTechnology has developed a novel EUV-IL beamline dedicated to nanopatterning using radiation from an undulator on the Aladdin storage ring at the University of Wisconsin-Madison. The beamline and the EUV-IL system were commissioned in 2006; we have completed several characterization studies, and modified several key components to improve resolution and usability. The EUV-IL system can expose different pitches at the same time producing patterns with a range of halfpitch from 55nm down to 20nm and less on the wafer. We can also introduce a variable image modulation by performing double exposures, overlapping the interference pattern with the transmitted zero order. Recently we have demonstrated down to 20nm half-pitch printed IL image in PMMA resist.

Aspects of nanometer scale imaging with extreme ultraviolet (EUV) laboratory sources

Imaging systems with nanometer resolution are instrumental to the development of the fast evolving field of nanoscience and nanotechnology. Decreasing the wavelength of illumination is a direct way to improve the spatial resolution in photon-based imaging systems and motivated a strong interest in short wavelength imaging techniques in the extreme ultraviolet (EUV) region. In this review paper, various EUV imaging techniques, such as 2D and 3D holography, EUV microscopy using Fresnel zone plates, EUV reconstruction of computer generated hologram (CGH) and generalized Talbot self-imaging will be presented utilizing both coherent and incoherent compact laboratory EUV sources. Some of the results lead to the imaging with spatial resolution reaching 50 nm in a very short exposure time. These techniques can be used in a variety of applications from actinic mask inspection in the EUV lithography, biological imaging to mask-less lithographic processes in nanofabrication.