Artsem Shylau

Influence of correlated impurities on conductivity of graphene sheets: Time-dependent real-space Kubo approach

Numerical calculations of the conductivity of graphene sheets with random and correlated distributions of disorders have been performed using the time-dependent real-space Kubo formalism. The disorder was modeled by the long-range Gaussian potential describing screened charged impurities and by the short-range potential describing neutral adatoms both in the weak and strong scattering regimes. Our central result is that correlation in the spatial distribution for the strong short-range scatterers and for the long-range Gaussian potential do not lead to any enhancement of the conductivity in comparison to the uncorrelated case. Our results strongly indicate that the temperature enhancement of the conductivity reported in the recent study [J. Yan and M. S. Fuhrer, Phys. Rev. Lett. 107, 206601 (2011)] and attributed to the effect of dopant correlations was most likely caused by other factors not related to the correlations in the scattering potential.

Effect of charged line defects on conductivity in graphene : Numerical Kubo and analytical Boltzmann approaches

Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically vapor-deposited graphene, are described by a self-consistent Thomas-Fermi potential. A numerical study of electronic transport is performed by means of a time-dependent real-space Kubo approach in honeycomb lattices containing millions of carbon atoms, capturing the linear response of realistic size systems in the highly disordered regime. Our numerical calculations are complemented with a kinetic transport theory describing charge transport in the weak scattering limit. The semiclassical transport lifetimes are obtained by computing scattered amplitudes within the second Born approximation. The transport electron-hole asymmetry found in the semiclassical approach is consistent with the Kubo calculations. In the strong scattering regime, the conductivity is found to be a sublinear function of electronic density and weakly dependent on the Thomas-Fermi screening wavelength. We attribute this atypical behavior to the extended nature of one-dimensional charged defects. Our results are consistent with recent experimental reports.

Conductivity of epitaxial and CVD graphene with correlated line defects

Abstract Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo–Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due to the substrate morphology, and in polycrystalline chemically vapor-deposited (CVD) graphene due to the grain boundaries, composed of a periodic array of dislocations, or quasi-periodic nanoripples originated from the metal substrate. The extended line defects are described by the long-range Lorentzian-type scattering potential. The dc conductivity is calculated numerically for different cases of distribution of line defects. This includes a random (uncorrelated) and a correlated distribution with a prevailing direction in the orientation of lines. The anisotropy of the conductivity along and across the line defects is revealed, which agrees with experimental measurements for epitaxial graphene grown on SiC. We performed a detailed study of the conductivity for different defect correlations, introducing the correlation angle α max —the maximum possible angle between any two lines. We find that for a given electron density, the relative enhancement of the conductivity for the case of fully correlated line defects in comparison to the case of uncorrelated ones is larger for a higher defect density. Finally, we, for the first time, study the conductivity of realistic samples where both extended line defects and point-like scatterers such as adatoms and charged impurities are presented.

Generic suppression of conductance quantization of interacting electrons in graphene nanoribbons in a perpendicular magnetic field

The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a sup ...

Electron polarization function and plasmons in metallic armchair graphene nanoribbons

We calculate the polarization function of Dirac fermions in metallic armchair graphene nanoribbons for an arbitrary temperature and doping. We find that at finite temperatures due to the phase space redistribution among inter-band and intra-band electronic transitions in the conduction and valence bands, the full polarization function becomes independent of the temperature and the position of the chemical potential. As a result, for a given width of nanoribbons there exists a single plasmon mode, with the energy dispersion determined by the graphenes fine structure constant. In Coulomb-coupled nanoribbons, this plasmon splits into the basic in-phase and out-of-phase plasmon modes, with the splitting energy determined additionally by the inter-ribbon spacing.

Interacting electrons in graphene nanoribbons in the lowest Landau level

e study the effect of electron-electron interaction and spin on electronic and transport properties of gated graphene nanoribbons (GNRs) in a perpendicular magnetic field in the regime of the lowes ...

Conductance quantization suppression in the quantum Hall regime

Conductance quantization is the quintessential feature of electronic transport in non-interacting mesoscopic systems. This phenomenon is observed in quasi one-dimensional conductors at zero magnetic field B, and the formation of edge states at finite magnetic fields results in wider conductance plateaus within the quantum Hall regime. Electrostatic interactions can change this picture qualitatively. At finite B, screening mechanisms in narrow, gated ballistic conductors are predicted to give rise to an increase in conductance and a suppression of quantization due to the appearance of additional conduction channels. Despite being a universal effect, this regime has proven experimentally elusive because of difficulties in realizing one-dimensional systems with sufficiently hard-walled, disorder-free confinement. Here, we experimentally demonstrate the suppression of conductance quantization within the quantum Hall regime for graphene nanoconstrictions with low edge roughness. Our findings may have profound impact on fundamental studies of quantum transport in finite-size, two-dimensional crystals with low disorder.Conductance quantization is the hallmark of non-interacting confined systems. The authors show that the quantization in graphene nanoconstrictions with low edge disorder is suppressed in the quantum Hall regime. This is explained by the addition of new conductance channels due to electrostatic screening.

Plasmons in Dimensionally Mismatched Coulomb Coupled Graphene Systems

We calculate the plasmon dispersion relation for Coulomb coupled metallic armchair graphene nanoribbons and doped monolayer graphene. The crossing of the plasmon curves, which occurs for uncoupled 1D and 2D systems, is split by the interlayer Coulomb coupling into a lower and an upper plasmon branch. The upper branch exhibits an unusual behavior with end points at finite q. Accordingly, the structure factor shows either a single or a double peak behavior, depending on the plasmon wavelength. The new plasmon structure is relevant to recent experiments, its properties can be controlled by varying the system parameters and be used in plasmonic applications.

Plasmon-mediated Coulomb drag between graphene waveguides

We analyze theoretically charge transport in Coulomb coupled graphene waveguides (GWGs). The GWGs are defined using antidot lattices, and the lateral geometry bypasses many technological challenges of earlier designs. The drag resistivity

Interaction-induced enhancement of g-factor in graphene

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