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Dive into the research topics where Arutiun P. Ehiasarian is active.

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Featured researches published by Arutiun P. Ehiasarian.


Vacuum | 2002

Influence of high power densities on the composition of pulsed magnetron plasmas

Arutiun P. Ehiasarian; R. New; W.-D. Münz; Lars Hultman; Ulf Helmersson; Vladimir Kouznetsov

The application of high power pulses with peak voltage of -2 kV and peak power density of 3 kWcm-2 to magnetron plasma sources is a new development in sputtering technology. The high power is appli ...


Surface & Coatings Technology | 2003

High power pulsed magnetron sputtered CrNx films

Arutiun P. Ehiasarian; W.-D. Münz; Lars Hultman; Ulf Helmersson; I. Petrov

Microstructure and macroscopic properties of droplet free CrN films deposited by the recently developed high power pulsed magnetron sputtering (HIPIMS) technique are presented. Magnetron glow discharges with peak power densities reaching 3000 W cm−2 were used to sputter Cr targets in both inert and reactive gas atmospheres. The flux arriving at the substrates consisted of neutrals and ions (approx. 70/30) of the sputtered metal and working gas atoms (Ar) with significantly elevated degree of ionization compared to conventional magnetron sputtering. The high-speed steel and stainless steel substrates were metal ion etched using a bias voltage of −1200 V prior to the deposition of CrN films. The film-to-substrate interfaces, observed by scanning transmission electron microscope cross-sections, were clean and contained no phases besides the film and substrate ones or recrystallized regions. CrN films were grown by reactive HIPIMS at floating potential reaching −160 V. Initial nucleation grains were large compared to conventional magnetron sputtered films, indicating a high adatom mobility in the present case. The films exhibited polycrystalline columnar growth morphology with evidence of renucleation. No intercolumnar voids were observed and the corrosion behavior of the film was superior to arc deposited CrNx. A high density of lattice defects was observed throughout the films due to the high floating potential. A residual compressive stress of 3 GPa and a hardness value of HK0.025=2600 were measured. A low friction coefficient of 0.4 and low wear rates against Al2O3 in these films are explained by the absence of droplets and voids known to contribute to extensive debris generation.


Journal of Applied Physics | 2007

Interface microstructure engineering by high power impulse magnetron sputtering for the enhancement of adhesion

Arutiun P. Ehiasarian; Jianguo Wen; I. Petrov

An excellent adhesion of hard coatings to steel substrates is paramount in practically all application areas. Conventional methods utilize Ar glow etching or cathodic arc discharge pretreatments that have the disadvantage of producing weak interfaces or adding droplets, respectively. One tool for interface engineering is high power impulse magnetron sputtering (HIPIMS). HIPIMS is based on conventional sputtering with extremely high peak power densities reaching 3kWcm−2 at current densities of >2Acm−2. HIPIMS of Cr and Nb was used to prepare interfaces on 304 stainless steel and M2 high speed steel (HSS). During the pretreatment, the substrates were biased to Ubias=−600V and Ubias=−1000V in the environment of a HIPIMS of Cr and Nb plasma. The bombarding flux density reached peak values of 300mAcm−2 and consisted of highly ionized metal plasma containing a high proportion of Cr1+ and Nb1+. Pretreatments were also carried out with Ar glow discharge and filtered cathodic arc as comparison. The adhesion was ev...


Journal of Applied Physics | 2007

High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering

André Anders; Joakim Andersson; Arutiun P. Ehiasarian

The commonly used current-voltage characteristics are found inadequate for describing the pulsed nature of the high power impulse magnetron sputtering (HIPIMS) discharge; rather, the description needs to be expanded to current-voltage-time characteristics for each initial gas pressure. Using different target materials (Cu, Ti, Nb, C, W, Al, and Cr) and a pulsed constant-voltage supply, it is shown that the HIPIMS discharges typically exhibit an initial pressure dependent current peak followed by a second phase that is power and material dependent. This suggests that the initial phase of a HIPIMS discharge pulse is dominated by gas ions, whereas the later phase has a strong contribution from self-sputtering. For some materials, the discharge switches into a mode of sustained self-sputtering. The very large differences between materials cannot be ascribed to the different sputter yields but they indicate that generation and trapping of secondary electrons play a major role for current-voltage-time characteristics. In particular, it is argued that the sustained self-sputtering phase is associated with the generation of multiply charged ions because only they can cause potential emission of secondary electrons, whereas the yield caused by singly charged metal ions is negligibly small.


Journal of Vacuum Science and Technology | 2005

Ionization of sputtered metals in high power pulsed magnetron sputtering

Johan Böhlmark; Jones Alami; Chris Christou; Arutiun P. Ehiasarian; Ulf Helmersson

The ion to neutral ratio of the sputtered material have been studied for high power pulsed magnetron sputtering and compared with a continuous direct current (dc) discharge using the same experimen ...


Surface Engineering | 2001

Industrial scale manufactured superlattice hard PVD coatings

Münz W.-D.; D.B. Lewis; Papken Eh. Hovsepian; C. Schönjahn; Arutiun P. Ehiasarian; I.J. Smith

Abstract Superlattice hard PVD coatings exhibit high hardness values up to 60 GPa, wear resistance, and excellent protection against corrosion depending on the choice of the material partners involved. TiAlN/CrN, TiAlN/VN, TiAlYN/VN, TiAlN/ZrN, and CrN/NbN superlattice coatings with typical periods λ of 3–4 nm have been produced economically under production conditions in industrial sized coating equipment. Some of the coatings are characterised by high compressive stresses up to 10 GPa. In such cases the utilisation of the combined cathodic arc/unbalanced magnetron deposition method (arc bond sputtering technology) in combination with the introduction of a lower stressed monolithically grown base layer provides a sufficiently high bonding strength at the interface. The major deposition steps are: (1) pump down and preheating; (2) bombardment of the substrate surface with multi-ionised metal ions generated in a steered cathodic arc discharge; (3) deposition of a base layer (0·1–0·2 μm) using the unbalanced magnetron; (4) deposition of the superlattice coating with simultaneously operated unbalanced magnetrons or a combination of simultaneously operated unbalanced magnetrons and steered cathodic arc sources.


Applied Physics Letters | 2012

High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization

Arutiun P. Ehiasarian; A Hecimovic; T. de los Arcos; R. New; V Schulz-von der Gathen; Marc Böke; J Winter

We report on instabilities in high power impulse magnetron sputtering plasmas which are likely to be of the generalized drift wave type. They are characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron and cause periodic shifts in floating potential. The azimuthal mode number m depends on plasma current, plasma density, and gas pressure. The structures rotate in E→×B→ direction at velocities of ∼10 km s−1 and frequencies up to 200 kHz. Collisions with residual gas atoms slow down the rotating wave, whereas increasing ionization degree of the gas and plasma conductivity speeds it up.


Journal of Applied Physics | 2011

Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

Arutiun P. Ehiasarian; A. Vetushka; Y Aranda Gonzalvo; G. Sáfrán; L. Székely

HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N2 atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (Id) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti1+, Ti2+ and atomic nitrogen N1+. Ti1+ ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off t...


Journal of Physics D | 2008

Origins of ion energy distribution function (IEDF) in high power impulse magnetron sputtering (HIPIMS) plasma discharge

A Hecimovic; K Burcalova; Arutiun P. Ehiasarian

The ion energy distribution function (IEDF) in high power impulse magnetron sputtering (HIPIMS) discharges was studied by plasma sampling energy-resolved mass spectroscopy. HIPIMS of chromium (Cr), titanium (Ti) and carbon (C) targets in argon (Ar) atmosphere was analysed. Singly and doubly charged ions of both the target and the gas were detected. Time-averaged IEDFs were measured for all detected ions at the substrate position at a distance of 150 mm from the target. The effects of target current and discharge pressure on the IEDF were investigated. Measurements were done at two pressures and for three peak discharge currents.The IEDF of both the target and the gas ions was found to comprise two Maxwellian distributions. Quantitative analysis of target IEDFs at a low pressure showed that the main peak had a lower average energy with an approximate value of EAV = 1 eV which is attributed to collisions with thermalized gas atoms and ions. The higher energy distribution has a tail extending up to 70 eV, which is assumed to originate from a Thompson distribution of sputtered metal atoms which, due to collisions, are thermalized and appear as a Maxwell distribution. The proportion of high energy IEDFs for metal ions increases monotonically as a function of Id. The effective ion temperature kBT, extracted from the main low energy peak, showed a weak dependence on peak current. The effective ion temperature extracted from the high energy tail showed a strong correlation with the change in Id.The IEDF at high pressure shows that a proportion of high energy IEDFs was very low and dominated by a low energy main peak. The gas IEDF at high pressure was completely thermalized. The metal-ion-to-gas-ion ratio was found to increase with Id and with the sputtering yield of the target material.


Journal of Applied Physics | 2008

Ion composition produced by high power impulse magnetron sputtering discharges near the substrate

Arutiun P. Ehiasarian; A. Vetushka; A Hecimovic; S. Konstantinidis

Plasma composition near the substrate was investigated in a high power impulse magnetron sputtering (HIPIMS) discharge using Langmuir probe analysis, mass spectroscopy, and atomic absorption spectroscopy. The HIPIMS discharge was operated in nonreactive Ar atmosphere at a pressure of 2.66 Pa and the magnetron cathode was furnished with Ti target. Plasma density, metal ion-to-neutral ratio, and gas ion-to-metal ion ratio were studied as a function of discharge current. At peak discharge current densities of ∼1 A cm−2, the results show that a dense plasma (ne∼1018 m−3) expanded from the target toward the substrate and lasted more than 330 μs after the supplied power was turned off. The shape of the time-averaged ion energy distribution function of sputtered material exhibited a transition from Thompson to Maxwellian distribution, indicating efficient energy transfer in the discharge. The metal content in the plasma monotonically increased with discharge current and the metal ion-to-neutral ratio reached app...

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P.Eh. Hovsepian

Sheffield Hallam University

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W.-D. Münz

Sheffield Hallam University

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A Hecimovic

Sheffield Hallam University

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Daniel A.L. Loch

Sheffield Hallam University

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Paranjayee Mandal

Sheffield Hallam University

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R. New

Sheffield Hallam University

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