Arye Rosen

Millimeter Wave Silicon Device and Integrated Circuit Technology

Silicon millimeter wave integrated circuit (SIMMWIC) technology has been developed utilizing novel fabrication techniques. These techniques have been applied to IMPATT and PIN diode fabrication schemes, the results of which are presented.

Kilovolt Sequential Waveform Generation by Picosecond Optoelectronic Switching in Silicon

We demonstrate the generation of a sequential waveform by picosecond optoelectronic switching in silicon. A periodic pulse of two and one half cycles, with a peak to peak voltage of 850 volts, and an aperiodic step pulse are generated.

Direct DC to RF Conversion by Impulse Excitation of a Resonant Cavity

Conversion of energy from DC to RF has been demonstrated with an impulse-excited coaxial resonant cavity using picosecond optoelectronic switching techniques. A single pulse is capable of generating more than a hundred RF cycles with an energy conversion efficiency greater than 50%. Frequencies up to 3 GHz have been generated, and CW oscillations at 1.6 GHz have been obtained.

Optoelectronic Techniques for Microwave and Millimeter-Wave Applications

Three different experiments using optoelectronic techniques are reported. They are: (1) kilovolt sequential waveform generation by picosecond optoelectronic switching, (2) Direct DC to RF conversion by impulse excitations of a resonant cavity, and (3) high speed optoelectronic modulation of millimeter-waves in a silicon-on-sapphire waveguide.

Sequential Waveform Generation by Picosecond Optoelectronic Switching

The direct conversion of dc energy to RF pulses with high efficiency has many potential applications. They include: (1) the use of high-power electrical pulses for pulsed power devices and plasma-physics experiments; (2) various applications in high resolution radar and time domain metrology; and (3) the generation of megawatt level microwave and millimeter-wave pulses. All of these experiments require the development of an appropriate switch or an array of switches which can switch high power with extremely fast risetime and zero jitter. For sequential waveform generation several methods have been tried [1,2]. In reference [1], a series of step recovery diodes was used; however only low voltage switching has been demonstrated. The prospects of extending this technique to a high power switch are poor because the step recovery diodes encounter breakdown problems at high voltage. In reference [2], a frozen wave generator was used for sequential waveform generation. A frozen wave generator consists of many segments of transmission line charged alternately with positive and negative voltage (Fig. 1). Two adjacent segments are joined by a silicon switch which can be closed with a laser pulse. To maintain a high conversion efficiency and a good waveform, it is essential that all the switches be closed simultaneously and rapidly. Jitter in the switching process produces random frequency modulation which removes energy from the fundamental frequency. Picosecond laser activated semiconductor switches seem ideal for this application.

Design and performance of corrugated waveguide structures based on slab waveguide principles

A simple design is developed for corrugated waveguides for operation in the millimeterwave range of frequencies. The method determines both the corrugation period and the depth. The design is based on slab waveguide principles and uses solutions of the (scalar) boundary value problem of the slab waveguide to determine the corrugation depth and the corrugation spacing. The design tecimique compares well with other techniques developed for the purpose. Reflections at 90 at certain specific wavelengths are measured in the far field to obtain the radiation patterns. The patterns show good agreement with theoretical predictions confirming the effectiveness of design principles used. Measurements range in the frequencies from 90 GHz to 100 GHz. 1.