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Dive into the research topics where Asad Ullah is active.

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Featured researches published by Asad Ullah.


Applied Physics Letters | 2012

Topological correlations of three-dimensional grains

Hao Wang; Guoquan Liu; Asad Ullah; Junhua Luan

Topological correlations of three-dimensional grains were investigated by Monte Carlo-Potts model simulation. The result shows that, unlike first nearest neighbors (the Aboav-Weaire law [D. Aboav, Metallography 3, 383 (1970) and D. Weaire, Metallography 7, 157 (1974)] holds), there appears to be very little correlation between grains and their second and third nearest neighbors (on average), i.e., the average number of faces of second nearest neighbors, m2, and third nearest neighbors, m3, are independent of faces f of the center grain (nearly m2 = 14.984 and m3 = 14.489). This result indicates that long range correlations beyond first nearest neighbors may have negligible effect on the growth of center grains and thus provides support to a topologically averaged growth law that only considered the non-random first nearest-neighbor interactions.


Journal of Microscopy | 2011

On the sampling of three-dimensional polycrystalline microstructures for distribution determination

J. Luan; Guoquan Liu; Hao Wang; Asad Ullah

How to sample three‐dimensional microstructure and effectively reduce experimental error is a challenging problem. Taking seven single‐phase polycrystalline structures generated by 400×400×400 Potts Monte Carlo simulation as the study object, effects of sampling strategy on the determination of various characteristic parameters of the grain size distribution and grain topology distribution are studied. The mean voxel value (or volume) of individual grains in the three‐dimensional simulated microstructure varies from 4.56×104 to 1.0×103, and the number of grains contained in the structure varies from 63 901 to 1403. The results show that, a minimum of 200 sampled grains can ensure the relative error to be less than 5% for determination of the mean grain volume, the mean grain face number and the coefficient of variance of the distribution of grain size and the grain face number. Whereas for the coefficient of the skewness and the kurtosis of grain size distribution or grain face number distribution, a minimum of 800 sampled grains are required for the same error level. However, if some exceptional big grains appear, e.g. a grain larger than with eight multiples of mean grain volume and/or three multiples of mean grain face number, abnormal values of the two parameters would be resulted, even the number of examined grains is over 1000.


EPL | 2012

A note on grain topology-size relationship of three-dimensional polycrystalline microstructures

Junhua Luan; G. Q. Liu; Hao Wang; Asad Ullah

A grain topology-size equation for three-dimensional grains is suggested by considering the interactions of the nearest-neighbor grains, which indicates that the average grain size of a given topological class is determined by the difference between the grain face number and the average face number of nearest neighbors. In addition, a practical grain topology-size equation is presented. The two equations show good agreement with various experimental results. They are also verified by data of large-scale Potts model Monte Carlo simulation and Surface Evolver simulation.


EPL | 2013

Topological correlations of grain faces in polycrystal with experimental verification

Wenwen Li; Guoquan Liu; Hao Wang; Hao Zhang; Junhua Luan; Asad Ullah

How grain faces are arranged in three-dimensional grain structures is one of the outstanding problems in physics, biology and materials science. Based on the topological analysis of 477 real pure iron grains and 6093 Monte Carlo simulated grains, two forms of topological correlations are studied. The first correlation is Riviers relation (Philos. Mag. B, 52 (1985) 795), in which the average number of edges of faces neighboring to e-edged faces on f-faceted grains is related to e and f; and the second correlation is the one derived in the current paper, in which a typical e-edged face in a polycrystal is a function of the average number of edges of its neighboring faces M(e). Both correlations are verified by experimental and simulation data.


Computational Materials Science | 2012

A comparative study on Arrhenius-type constitutive equations and artificial neural network model to predict high-temperature deformation behaviour in 12Cr3WV steel

Xiang Xiao; G.Q. Liu; Benfu Hu; X. Zheng; L.N. Wang; S.J. Chen; Asad Ullah


Separation and Purification Technology | 2014

Advancement in the photocatalytic properties of TiO2 by vanadium and yttrium codoping: Effect of impurity concentration on the photocatalytic activity

Matiullah Khan; Jing Li; Wenbin Cao; Asad Ullah


Materials Characterization | 2014

Three-dimensional visualization and quantitative characterization of grains in polycrystalline iron

Asad Ullah; Guoquan Liu; Junhua Luan; Wenwen Li; Mujeeb ur Rahman; Murad Ali


Materials Express | 2013

Optimal approach of three-dimensional microstructure reconstructions and visualizations

Asad Ullah; Guoquan Liu; Hao Wang; Matiullah Khan; Dil Faraz Khan; Junhua Luan


Materials Characterization | 2013

Effect of V and Ta on the precipitation behavior of 12%Cr reduced activation ferrite/martensite steel

Xiang Xiao; Guoquan Liu; Benfu Hu; Jinsan Wang; Asad Ullah


Materials Letters | 2012

Synthesis of novel clinopinacoid structure of stannous oxide and hydrogen absorption characteristics

M. Zubair Iqbal; Fengping Wang; Rafi-ud-din; M. Yasir Rafique; Qurat-ul-ain Javed; Asad Ullah; Hongmei Qiu

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Guoquan Liu

University of Science and Technology Beijing

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Matiullah Khan

Kohat University of Science and Technology

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Hao Wang

University of Science and Technology Beijing

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Junhua Luan

City University of Hong Kong

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Mujeeb ur Rahman

Karakoram International University

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Benfu Hu

University of Science and Technology Beijing

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Wenwen Li

University of Science and Technology Beijing

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Xiang Xiao

University of Science and Technology Beijing

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Dil Faraz Khan

University of Science and Technology

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