Ashok K. Kapoor
Fairchild Semiconductor International, Inc.
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Ashok K. Kapoor.
IEEE Transactions on Electron Devices | 1986
Ashok K. Kapoor; Michael E. Thomas; M.B. Vora
A technology to produce low-barrier MoSi2Schottky diodes for use in LSI bipolar circuits has been developed. Molybdenum disilicide is formed on single-crystal silicon by a self-aligned process under extremely clean conditions. Auger electron spectroscopy (AES) and infrared (IR) absorption techniques are used extensively to monitor the formation and thickness of MoSi2films. Capacitance-voltage and current-voltage measurements at varying temperatures are employed to characterize the Schottky barrier, which has a measured potential of 0.66 eV.
Archive | 1989
Madhukar B. Vor; Gregory N. Burton; Ashok K. Kapoor
Archive | 1984
Michael E. Thomas; Madhukar B. Vora; Ashok K. Kapoor
Archive | 1988
Michael E. Thomas; Madhukar B. Vora; Ashok K. Kapoor
Archive | 1985
Ashok K. Kapoor; Hemraj K. Hingarh
Archive | 1992
Ashok K. Kapoor
Archive | 1990
Ashok K. Kapoor
Archive | 1988
Ashok K. Kapoor; Frank J. Ciacchella
Archive | 1986
Madhukar B. Vora; Greg Burton; Ashok K. Kapoor
Archive | 1988
Ashok K. Kapoor
