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Dive into the research topics where Asok Nath Basu is active.

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Featured researches published by Asok Nath Basu.


Optical Engineering | 2001

Studies on the propagation of light from a light-emitting diode through a glass tube and development of an optosensor for the continuous detection of liquid level

Nabinbaran Manik; S.C. Mukherjee; Asok Nath Basu

The authors develop a new technique for continuous measurement of liquid level by an optosensor. The objectives are (i) to study the propagation of light from a light-emitting diode (LED) through a glass tube and (ii) based on this principle, to develop a continuous liquid level sensor. The attenuation of light from an LED through a glass tube with distance has been investigated and an empirical relation for it has been established. The result is applied to the detection of water level. The sensor comprises a hollow glass tube with a combined LED- photodetector assembly (the optosensor) and a light reflector inside the tube. The reflector floats on the liquid surface, and light emitted from the LED is detected after reflection from it. The detected light intensity varies with the distance between the optosensor and the reflector. The position of the float changes with the variation of the liquid level. The present level sensor can detect a change of liquid level at distances up to 80 cm with an accuracy of the order of 0.5 mm.


Colloid and Polymer Science | 1988

Unified study of the different physical properties of amorphous polymers

Prabir K. Biswas; Shyamal Sengupta; Asok Nath Basu

Uptil now it has not been possible to explain the different physical properties of amorphous polymers using a model based on a single conceptual scheme. In this paper, a phenomenological model is proposed which tries to explain the mechanical, optical and thermal properties (both thermal conductivity and expansivity) of amorphous polymers. The model has similarities with the composite model, proposed by the present authors, which has proved to be successful in interpreting the different physical properties of semicrystalline polymers. The present model considers the bulk form of the polymer as an aggregate of microscopic units possessing intrinsic physical properties. On drawing, the development of anisotropy in different physical properties is supposed to be due to the development of preferred orientation of these units. The development of the preferred orientation has been estimated directly from birefringence data. The agreement between the calculated and experimental values of the elastic modulus, thermal conductivity and thermal expansivity of PVC, PMMA and PS is found to be reasonable good.


Colloid and Polymer Science | 1986

Mechanical properties of oriented fibres of semicrystalline polymers based upon orientation function from optical properties

Prabir K. Biswas; Shyamal Sengupta; Asok Nath Basu

The computation of the orientational averages is a great problem in the case of semicrystalline polymers. In a previous communication [1] it has been shown that sinθ=f(λ) sinθ′ describes the orientational changes satisfactorily for a certain class of polymers. In this paper some alternative deformation schemes are also discussed. It has been concluded that birefringence provides a useful guideline in the choice of a deformation scheme.


Silicon | 2018

Effect of Temperature on Electro-Optical Characteristics of Silicon Based p-n Photodiode (VTB8440BH)

Pradip Dalapati; Nabin Baran Manik; Asok Nath Basu

To get useful information about the carrier transport mechanism we first measure the current-voltage (I-V) characteristics of a silicon p-n photodiode (VTB8440BH) in the temperature range 350 − 110 K. All semilog I-V curves exhibit three successive linearly dependent regions along with their bias levels which are defined as I, II and III regions, respectively. Regions I and II with different slopes are used to determine the bias dependent ideality factors namely, n1 and n2. The variation of n1 and n2 with temperature shows that with lowering of temperature the tunneling probability gradually increases. Furthermore, these results are used to identify the paramount carrier at different bias levels. Secondly, to acquire knowledge of electron-hole generation rate we measure the variation of photocurrent in the same temperature range. Results show that photocurrent decreases slowly as temperature decreases from 350 to 239 K and it changes sharply below 239 K. The change of photocurrent with temperature is explained in terms of temperature dependence of carrier mobility, lifetime and optical generation rate. Finally, these results will be helpful for precision application of the optoelectronics device in both high and low temperature ambience.


Optical and Quantum Electronics | 2015

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

Pradip Dalapati; Nabin Baran Manik; Asok Nath Basu


Frontiers of Optoelectronics | 2014

Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

Pradip Dalapati; Nabin Baran Manik; Asok Nath Basu


Cryogenics | 2015

Study of effective carrier lifetime and ideality factor of BPW 21 and BPW 34B photodiodes from above room temperature to liquid nitrogen temperature

Pradip Dalapati; Nabin Baran Manik; Asok Nath Basu


Optik | 2015

Effect of temperature on light–current (L–IL) characteristics of GaAlAs based infrared emitter

Pradip Dalapati; Subhasis Maity; Nabin Baran Manik; Asok Nath Basu


Optik | 2016

Effect of temperature on the opto-electrical properties of GaP based light emitting diodes

Pradip Dalapati; Nabin Baran Manik; Asok Nath Basu


Journal of Electronic Materials | 2016

Studies on the Effect of Temperature on Electroluminescence, Current–Voltage, and Carrier Lifetimes Characteristics in a InGaN/Sapphire Purple Light Emitting Diode

Pradip Dalapati; Nabin Baran Manik; Asok Nath Basu

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