Augustinus J.H.M. Rijnders

Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces

The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950?K-1100?K) as a function of ambient oxygen partial pressure (pO2). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O3 substrates. For both structures, the high temperature sheet carrier density nS of the LAO/STO-interface saturates at a value of about 1?×?1014?cm?2 for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects.

Direct patterning of functional interfaces in oxide heterostructures

We report on the direct patterning of high-quality structures incorporating the LaAlO3-SrTiO3 interface by an epitaxial-liftoff technique avoiding any reactive ion beam etching. Detailed studies of temperature dependent magnetotransport properties were performed on the patterned heterostructures with variable thickness of the LaAlO3 layer and compared to their unstructured thin film analogues. The results demonstrate the conservation of the high-quality interface properties in the patterned structures enabling future studies of low-dimensional confinement on high mobility interface conductivity as well as interface magnetism.

Symmetry and lattice mismatch induced strain accommodation near and away from correlated perovskite interfaces

Distinct MnO6 octahedral distortions near and away from the La0.67Sr0.33MnO3/SrTiO3(001) (LSMO/STO) interface are quantified using synchrotron x-ray diffraction and dynamical x-ray diffraction simulations. Three structural regions of stress accommodation throughout the film thickness were resolved: near the LSMO/STO interface, intermediate region farther from the interface, and the main layer away from the interface. The results show that within the first two unit cells stress is accommodated by the suppression of octahedral rotations in the film, leading to the expansion of the c-axis lattice parameter. Farther from the interface film structure acquires octahedral tilts similar to thicker perovskite films under tensile stress, leading to a reduced c-axis parameter. We demonstrate that these regions are related to two different strain coupling mechanisms: symmetry mismatch at the interface and lattice mismatch in the rest of the film. The findings suggest new routes for strain engineering in correlated perovskite heterostructures.

SQUID magnetometer operating at 37K based on nanobridges in epitaxial MgB2 thin films

Superconducting quantum interference devices SQUIDs and magnetometers are fabricated from nanoconstrictions in epitaxial MgB2 films. The nanobridges are contained within single-crystalline grains, resulting in clean transport, a large critical current density of 5107 A/cm2 at 4.2 K, and stable SQUID voltage modulation up to 38.8 K. The magnetometer is realized with an inductively coupled pickup loop, giving rise to a field sensitivity of 1 pT Hz?1/2 down to 1 Hz. The device properties are governed by the two-band superconducting nature of MgB2, posing, however, no problems to a successful development of boride magnetic field sensing devices. The MgB2 zero-temperature London penetration depth is measured to be 62 nm, close to theoretical predictions.

Transport processes in YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox ramp type Josephson junctions

A study of the YBCO/PBCO/YBCO ramp junctions with and without PBCO barrier shows that the Josephson and normal state behavior of these structures are determined by the thickness of the PBCO barrier and its nature. The boundary resistance and depression of the YBCO superconducting parameters near the interface do not strongly affect the junction characteristic. For thicknesses of 8 to 20 nm of the PBCO barrier the Josephson coupling is established through the high resistive barrier and the behavior of the junctions is better described by a SNINS model than by a SNS weak link model. Proximity effect, resonant tunneling and strong pair breaking mechanisms are discussed to explain the experimental characteristics. Good agreement with the experimental dependence of the IcRn product on the temperature and on the PBCO barrier thickness was obtained if a strong pair breaking mechanisms in the barrier is taken into account.

Persistent conductive footprints of 109o domain walls in bismuth ferrite films

Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109° domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall “footprints” is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization.

Local control over nucleation of epitaxial thin films by seed layers of inorganic nanosheets.

Nanosheets of Ti0.87O2 and Ca2Nb3O10 were synthesized and transferred onto Si substrates by Langmuir-Blodgett deposition. Using pulsed laser deposition, SrRuO3 films were formed on top of these samples. The underlying nanosheets determined both the morphology and crystallographic orientation of the films. SrRuO3 grew preferentially in the [110]pc direction on Ti0.87O2 nanosheets, while growth proceeded in the [001]pc direction on Ca2Nb3O10 nanosheets (pc refers to the pseudocubic unit cell of SrRuO3). Besides macroscopic control over the out-of-plane crystal direction, single crystal orientations were measured by electron backscatter diffraction on the level of individual nanosheets, indicating that epitaxial growth was achieved on the nanosheets as imposed by their well-defined crystal lattices. The nanosheets also had a clear effect on the magnetic properties of the films, which showed anisotropic behavior only when a seed layer was used. A monolayer consisting of a mixture of both types of nanosheets was made to locally control the nucleation of SrRuO3. In this context, SrRuO3 was used as model material, as it was used to illustrate that nanosheets can be a unique tool to control the orientation of films on a (sub-)micrometer length scale. This concept may pave the way to the deposition of various other functional materials and the fabrication of devices where the properties are controlled locally by the different crystallographic orientations.

The significance of the piezoelectric coefficient d31,eff determined from cantilever structures

The method used by SolMateS to determine the effective piezoelectric coefficient d31,eff of Pb(Zr,Ti)O3 (PZT) thin films from cantilever displacement measurements is described. An example from a 48 cantilever dataset using different cantilever widths, lengths and crystal alignments is presented. It is shown that for the layer stack of our cantilevers, the multimorph model is more accurate compared to the bimorph model for the d31,eff determination. Corrections to the input parameters of the model are further applied in order to reduce the geometrical error of the cantilever that is caused by its design and processing, as well as correction to the measured tip displacement caused by resonance amplification. It is shown that after these corrections, the obtained d31,eff values are still up to 10% uncertain as the plate behavior and the non-constant radius of curvature of the cantilevers lead to inconsistent results. We conclude that quantitative determination of d31,eff from the cantilevers is highly subjective to misinterpretation of the models used and the measurement data. The true value of d31,eff was determined as −118.9 pm V−1.

Nucleation and growth of PrBa2Cu3O7−δ barrier layers on ramps in DyBa2Cu3O7−δ studied by atomic force microscopy

We studied the microstructure of Ar ion-beam etched ramps in epitaxial DyBa2Cu3O7-d films by atomic force microscopy. Generally, ramps were well aligned with one of the crystal axes of the (001) SrTiO3 substrate. In those cases we observed a surface reconstruction into a regular pattern of very long (up to 0.5 mm), about 20 nm wide facets, parallel to the ramp edge. For high misorientation angles, the reconstruction appeared much more complex and less regular. Furthermore, we investigated the nucleation and growth of very thin barrier layers of PrBa2Cu3O7-d on well aligned ramps. We found that nucleation takes place in the shallow trenches in the ramp, where facets meet. When more material is deposited, islands coalesce to form closed domains parallel to the trenches. This causes a thickness modulation close to 100% for barrier layer thickness up to 6 nm. The conclusions drawn from this research allow for an important improvement of the technology for the fabrication of ramp-type junctions.

Band offsets and density of Ti3+ states probed by x-ray photoemission o LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors

A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by x-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band offset and the density of Ti+3 states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low PO2 yields Ti+3 states with higher density and lower binding energy compared to the sample grown at high PO2 or to the bare STO reference sample. Band-offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence-band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, which displays the largest Ti 2p and Sr 3d peak widths