Aurelia Mandes

Growth and characteristics of tantalum oxide thin films deposited using thermionic vacuum arc technology

Tantalum pentoxide (Ta2O5) thin films were synthesized using thermionic vacuum arc (TVA) technology. TVA is an original deposition method using a combination of anodic arc and electron gun system for the growth of thin films from solid precursors under vacuum of 10−6 Torr. The properties of the deposited Ta2O5 thin films were investigated in terms of wettability, refractive index, morphology, and structure. The surface free energy was determined by means of surface energy evaluation system indicating a hydrophilic character and the refractive index was measured by Filmetrics F20 device. The morphology was determined from bright field transmission electron microscopy (TEM) image performed by Philips CM 120 ST TEM system. It exhibits nanoparticles of 3–6 nm diameter smoothly distributed. Selected area electron diffraction pattern revealed the contrast fringes given by complex polycrystalline particles included in the amorphous film. The measured fringes could be indexed using monoclinic structure of Ta2O5.

DLC Thin Films and Carbon Nanocomposite Growth by Thermionic Vacuum Arc (TVA) Technology

The aim of this chapter is to report the results on synthesis DLC thin films and carbon nanocomposites by the versatile nanofabrication method based on plasma entitled thermionic vacuum Arc (TVA). TVA technology is based on the localized ignition of the arc plasma in vacuum conditions. Among thin film coating methods by vacuum deposition techniques with high purity, low roughness, and good adhesion on the substrates, TVA is one of the major suitable methods to become a powerful coating technology. Two or three different TVA discharges can be ignited simultaneously in the same chamber for multi-material processing using TVA and separate power supplies. These TVA discharges are localized and do not interfere with each other. Simultaneous two or three TVA discharges were already used for the production of alloy/composite of various materi‐ als. This is due to the high versatility concerning the configuration of experimental arrangements, taking into account the number of electron guns, symmetry of the electrodes, relative position of the anode versus cathode, and also the huge opportunity to combine the materials to be deposited: biand multi-layers, nanocomposites, or alloys in order to have specific applications. This chapter presents the comparative results concerning the surface-free energy information processing, the reflective index, the hardness, and the morphology to provide a coherent description of the diamond-like carbon films and carbon nanocomposites synthesized by thermionic vacuum arc (TVA) and related configurations where Me = Ag, Al, Cu, Ni, and Ti: binary composites (CMe, C-Si) and ternary composites (C+Si+Me). The results include reports on the distribution in size, surface, geometry, and dispersion of the nanosized constituents, tailoring and understanding the role of interfaces between structurally or chemically dissimilar phases on bulk properties, as well as the study of physical properties of nanocomposites (structural, chemical, mechanical, tribological). The results presented

Magnesium plasma diagnostics by heated probe and characterization of the Mg thin films deposited by thermionic vacuum arc technology

The aim of this paper is to report on magnesium plasma diagnostics and to investigate the properties of thin Mg films deposited on Si and glass substrates by using thermionic vacuum arc (TVA) technology. TVA is an original deposition method using a combination of anodic arc and powerful electron gun system (up to 600 W) for the growth of thin films from solid precursors under a vacuum of 10−6Torr. Due to the comparatively high deposition rate as well as comparatively high plasma potential—around 0.5 kV—plasma diagnostics were carried out by a heated probe that prevents layer deposition on the probe surface. The estimated value of electron density was in the order of 1.0 × 1016m−3 and the electron temperature varied between 4 × 104 and 1.2 × 105 K (corresponding to two different discharge conditions). The thin Mg films were investigated using SEM images and TEM analyses provided with HR-TEM and SAED facilities. According to the SAED patterns the structure of the films can be indexed as two forms: hexagonal structure for Mg and cubic structure for MgO; the peak value of grain size distribution was 91.29 nm in diameter for Mg TVA/Si and 61.06 nm for Mg TVA/Gl.

Binary C-Ag Plasma Breakdown and Structural Characterization of the Deposited Thin Films by Thermionic Vacuum Arc Method

Binary elemental plasma of carbon and silver was synthesized using the thermionic vacuum arc technology for the first time in this configuration. The structural investigations of the deposited silver/amorphous carbon (Ag/a-C) nanocomposites thin film on different materials, such as Si, glass, and stainless steel OLC 45 substrates performed by high-resolution transmission electron microscopy were reported, as well as the modification of the properties at the nanometer level.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silic...

Nanostructured carbon-titanium multilayer films obtained by thermionic vacuum arc method

Carbon-Titan (C-Ti) multilayer films were deposited on silicon substrates by means of Thermionic Vacuum Arc (TVA) method. The final thickness of the multilayer structures was up to 400nm. The coated layers consisted of a base layer of about 100nm of Carbon deposited at low evaporation rates in order to ensure its stability on the substrate. Subsequently, seven Carbon and Titanium layers were deposited alternatively on top of Carbon base layer, each of them has a final thickness up to 40nm. For this study we obtained different batches of samples by variation of the substrate temperature between 0°C and 400°C, and the ion acceleration voltage applying a negative substrate bias voltage up to -700V . A low deposition rate 0.14nm/s for C and 0.18nm/s for Ti respectively was used in order to obtain the precise thickness. The characterization of microstructure properties of as prepared C-Ti multilayer structures were done using Electron Microscopy techniques (TEM, SEM, STEM), and Raman Spectroscopy. TEM and STEM studies were performed on Philips Tecnai F30G2 at 300kV setup. Identification of the structure of the material was based on the data obtained from diffraction pattern with a Philips CM120ST using CRISP2 application, with crystalline material module (ELD). The morphology and thickness of the samples were also determined by SEM techniques with Quanta FEG450 setup. The thickness thus measured are between 155.4nm and 393.9nm. Raman spectra were measured at room temperature on a Jobin Yvon T6400 spectrometer using 514.5nm line of an Ar+ laser as the excitation source. The measurements reveal the content of diamond-like sp3 and graphite-like sp2; the ratio sp3/sp2 increases when the bias voltage increases. For tribological characteristics determination, systematic measurements were performed using a ball-on-disk tribometer made by CSM Switzerland with normal force of 0.5, 1, 2, 3N respectively. The coefficient of friction depends on the substrate temperature and on the bias voltage. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured using drop voltage between two ohmic contacts on the sample and drop voltage on a standard resistance in a constant current regime. Owing to metallic layer of titanium in multilayer films, mechanical and electrical properties can be improved.

Structural and Mechanical Properties of Nanostructured C-Ag Thin Films Synthesized by Thermionic Vacuum Arc Method

Nanostructured C-Ag thin films of 200 nm thickness were successfully synthesized by the Thermionic Vacuum Arc (TVA) method. The influence of different substrates (glass, silicon wafers, and stainless steel) on the microstructure, morphology, and mechanical properties of nanostructured C-Ag thin films was characterized by High-Resolution Transmission Electron Microscopy (HRTEM), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and TI 950 (Hysitron) nanoindenter equipped with Berkovich indenter, respectively. The film’s hardness deposited on glass ( = 1.8 GPa) was slightly lower than in the case of the C-Ag film deposited on a silicon substrate ( = 2.2 GPa). Also the apparent elastic modulus was lower for C-Ag/Gl sample ( = 100 GPa) than for C-Ag/Si ( = 170 GPa), while the values for average roughness are  nm (C-Ag/Si) and (C-Ag/Gl). Using the modulus mapping mode, spontaneous and indentation-induced aggregation of the silver nanoparticles was observed for both C-Ag/Gl and C-Ag/Si samples. The nanocomposite C-Ag film exhibited not only higher hardness and effective elastic modulus, but also a higher fracture resistance toughness to the silicon substrate compared to the glass substrate.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Characterization of nitrogen doped silicon-carbon multi-layer nanostructures obtained by TVA method

Ionized nitrogen doped Si-C multi-layer thin films used to increase the oxidation resistance of carbon have been obtained by Thermionic Vacuum Arc (TVA) method. The 100 nm thickness carbon thin films were deposed on silicon or glass substrates and then seven N doped Si-C successively layers on carbon were deposed. To characterize the microstructure, tribological and electrical properties of as prepared N-SiC multi-layer films, Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDXS), electrical and tribological techniques were achieved. Samples containing multi-layer N doped Si-C coating on carbon were investigated up to 1000°C. Oxidation protection is based on the reaction between SiC and elemental oxygen, resulting SiO2 and CO2, and also on the reaction involving N, O and Si-C, resulting silicon oxynitride (SiNxOy) with a continuously vary composition, and because nitrogen can acts as a trapping barrier for oxygen. The tribological properties of structures were studied using a tribometer with ball-on-disk configuration from CSM device with sapphire ball. The measurements show that the friction coefficient on the N-SiC is smaller than friction coefficient on uncoated carbon layer. Electrical conductivity at different temperatures was measured in constant current mode. The results confirm the fact that conductivity is greater when nitrogen content is greater. To justify the temperature dependence of conductivity we assume a thermally activated electrical transport mechanism.

Structural and electrical properties of N doped SiC nanostructures obtained by TVA method

Ionized nitrogen doped Si-C thin films at 200°C substrate temperature were obtained by Thermionic Vacuum Arc (TVA) method. To increase the energy of N, C and Si ions, -400V, -600V and -1000V negative bias voltages was applied on the substrate. The 400nm, 600nm and 1000nm N-SiC coatings on glass was deposed. To characterize the structure of as-prepared N-SiC coatings, Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray and Photoelectron Spectroscopy (XPS) techniques was performed. Electrical conductivity was measured comparing the potential drop on the structure with the potential drop on a series standard resistance in a constant current mode. To justify the dependence of measured electrical conductivity by the temperature, we assume a thermally activated electrical transport mechanism.