Aurelien J. F. David

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

We relate the currently limited efficiency of photonic crystal (PhC)-assisted gallium nitride light-emitting diodes (LEDs) to the existence of unextracted guided modes. To remedy this, we introduce epitaxial structures which modify the distribution of guided modes. LEDs are fabricated according to this concept, and the tailored band structure is determined experimentally. We investigate theoretically the consequences of this improvement, which significantly enhances the potential for efficient light extraction by PhCs.

Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

We observe experimentally by photoluminescence the band structure and specific emission properties of an in-plane, light-diffracting photonic crystal formed onto a multimode gallium nitride waveguide. Clear-cut two-dimensional photonic crystal effects are reported. Comparison with modeling results in identification of the band structure, provides insight into the light diffraction mechanism and points out design issues for enhancement of the extraction efficiency.

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control.

Optimization of Light-Diffracting Photonic-Crystals for High Extraction Efficiency LEDs

Photonic-crystal (PhC)-assisted light extraction is a promising method for ultrahigh efficiency, planar light-emitting diodes (LEDs). However, modeling of such structures is challenging due to the variety of their parameters and the heavy computational burden they represent. We present a thorough theoretical discussion of the optimization of PhC LEDs, which relies both on approximate treatments and on rigorous 3-D calculations. Two material systems (GaAs and GaN) are investigated, leading to quite different optimal regimes. Notably, it appears that besides the properties of the 2-D PhC itself, design of the vertical structure plays a major role in optimization

Photonic crystal laser lift-off GaN light-emitting diodes

We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes, thinned down to the microcavity regime, incorporating two-dimensional photonic crystal diffraction gratings. Angle-resolved measurements reveal the photonic behavior of the devices, which strongly depends on the GaN thickness. Data point out the detrimental role of metal absorption. We explore theoretically the possibility to limit this loss channel.

Photonic crystal light-emitting sources

Photonic crystals (PhCs) are periodically structured optical media offering the opportunity for spontaneous emission (SpE) to be strongly controlled in spatial terms (directions) or in absolute terms (rates). We discuss the application of this concept for practical light-emitting sources, summarizing the principles and actual merits of various approaches based on two- and three-dimensional PhCs. We take into consideration the numerous constraints on real-world light-emitting structures and materials. The various mechanisms through which modified photonic bands and band gaps can be used are first revisited in view of their use in light sources. We then present an in-depth discussion of planar emitters and enhanced extraction of light thanks to grating diffraction. Applications to conventional III-V semiconductors and to III-nitrides are reviewed. Comparison with random surface roughening reveals some common physical limitations. Some advanced approaches with complex structures or etched active structures are also discussed. Finally, the most promising mechanism to enhance the SpE rate, the Purcell effect, is considered. Its implementation, including through plasmonic effects, is shown to be effective only for very specific sources. We conclude by outlining the mix of physics and material parameters needed to grasp the relevant issues.

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

We present experimental results on III–nitride light-emitting diodes emitting at 410 nm, grown on low-defectivity bulk GaN substrates. The epitaxial layers are optimized for high peak efficiency and maintain efficiency at very high current densities. We use a volumetric device architecture with surface roughness to maximize light extraction efficiency. We report an external quantum efficiency of 68% at 180 A cm−2. No current crowding is observed at high current density. We also demonstrate flat-line reliable operation to over 1000 h.

Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

We report on violet-emitting III-nitride light-emitting diodes (LEDs) grown on bulk GaN substrates employing a flip-chip architecture. Device performance is optimized for operation at high current density and high temperature, by specific design consideration for the epitaxial layers, extraction efficiency, and electrical injection. The power conversion efficiency reaches a peak value of 84% at 85 °C and remains high at high current density, owing to low current-induced droop and low series resistance.

Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells

GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells (MQWs) were fabricated by holographic lithography and subsequent reactive ion etching. Etch related damage of the nanostructures was successfully healed through annealing in NH3∕N2 mixtures under optimized conditions. The nanopatterned samples exhibited enhanced luminescence in comparison to the planar wafers. X-ray reciprocal space maps recorded around the asymmetric (101¯5) reflection revealed that the MQWs in both nanopillars and nanostripes relaxed after nanopatterning and adopted a larger in-plane lattice constant than the underlying GaN layer. The pillar relaxation process had no measurable effect on the Stokes shift typically observed in MQWs on c-plane GaN, as evaluated by excitation power dependent photoluminescence (PL) measurements. Angular-resolved PL measurements revealed the extraction of guided modes from the nanopillar arrays.

Photonic crystal-assisted light extraction from a colloidal quantum Dot/GaN hybrid structure

We present a study of the light extraction from CdSe/ZnS core/shell colloidal quantum dot thin films deposited on quantum well InGaN/GaN photonic crystal structures. The two-dimensional photonic crystal defined by nanoimprint lithography is used to efficiently extract the guided light modes originating from both the quantum dot thin films and the InGaN quantum wells. Far-field photoluminescence spectra are used to measure the extraction enhancement factor of the quantum dot emission (×1.4). Microphotoluminescence measurements show that the guided mode effective extraction lengths range between 70 and 180 μm, depending on the wavelength of light.