Axel Soulet

ALD and Characterization of Aluminum Oxide Deposited on Si ( 100 ) using Tris(diethylamino) Aluminum and Water Vapor

© The Electrochemical Society, Inc. 2006. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Katamreddy, R., R. Inman, G. Jursich, A. Soulet, and C. Takoudis, 2006, ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor: Journal of the Electrochemical Society, v. 153, no. 10, p. C701-C706.

Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer

The authors investigated the effectiveness of atomic layer deposited (ALD) aluminum oxide barrier layer in controlling the interfacial reaction between ALD HfO2 film and Si substrate. The HfO2 was observed to form silicate and silicide at its interface with Si during 5min postdeposition annealing in Ar at 800 and 1000°C. A 0.5-nm-thick Al2O3 barrier layer was found to control interfacial reactions between HfO2 and Si during annealing at 800°C, but not at 1000°C, whereas a 1.5-nm-thick barrier of Al2O3 was needed to prevent interfacial reaction up to an annealing temperature of 1000°C.

Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal(diethylamino) precursors

Tetrakis-diethylamino hafnium (TDEAH), tris-diethylamino aluminum (TDEAA), and ozone were used for the atomic layer deposition (ALD) of HfO 2 , Al 2 O 3, and HfAlO x films. The ALD rates were measured to be 1.1 A/cycle for HfO 2 and 1.3 A/cycle for Al 2 O 3 . The ALD temperature windows were found to be between 200 and 325 °C for TDEAA, and between 200 and 275 °C for TDEAH. The overlap of these ALD windows between 200 and 275 °C is critical for ALD of the composite film, HfAlO x . In addition to the overlapping ALD temperature windows, the two metal precursors have similar thermal characteristics, as shown by TGA and differential scanning calorimetry. As-deposited films and films postannealed at 600 and 800 °C films were analyzed using Fourier transformed infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction (XRD) techniques. FTIR spectra revealed interfacial oxide growth during deposition of both HfO 2 and Al 2 O 3 whose thickness increased with annealing temperature. The FTIR data also indicated hydroxyl and nitrate groups in the films; these species were removed after annealing in Ar at a temperature of ⩾600 °C. Both FTIR and XRD results indicated the crystallization of pure HfO 2 after annealing at temperatures as low as 600 °C. On the other hand, pure Al 2 O 3 remained amorphous after annealing at temperatures up to 800 °C. XRD data of the composite HfAlO x film show that films deposited by alternating five cycles of HfO 2 and one cycle of Al 2 O 3 remained amorphous after annealing at 600 °C. Rutherford backscattering analysis of HfAlO x deposited with a varied number of alternating HfO 2 and Al 2 O 3 cycles demonstrated a strong correlation between the cyclic dosage of TDEAA and TDEAH and the film composition.

Erratum: ALD and Characterization of Aluminum Oxide Deposited on Si ( 100 ) Using Tris(diethylamino) Aluminum and Water Vapor [ J. Electrochem. Soc. , 153 , C701 (2006) ]

D Erratum: ALD and Characterization of Aluminum Oxide Deposited on Si„100... Using Tris(diethylamino) Aluminum and Water Vapor [J. Electrochem. Soc., 153, C701 (2006)] Rajesh Katamreddy, Ronald Inman, Gregory Jursich, Axel Soulet, and Christos Takoudis American Air Liquide, Chicago Research Center, Countryside, Illinois 60525, USA Departments of Chemical Engineering and Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA