Ayan Roy Chaudhuri

Interface dominated biferroic La0.6Sr0.4MnO3∕0.7Pb(Mg1∕3Nb2∕3)O3–0.3PbTiO3 epitaxial superlattices

Superlattices composed of ferromagnetic La0.6Sr0.4MnO3 and ferroelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3(PbTiO3) layers were fabricated on (100) LaAlO3 substrates by pulsed laser deposition technique. The ferromagnetic and frequency independent ferroelectric hysteresis characteristics established the biferroic nature of the superlattices. Influence of magnetic field was observed in tuning the P-E characteristics of the superlattices. A similar effect was observed on application of a high dc electric field to the samples. The nature of the observed ferroelectric properties and their modulation by applied magnetic and electric fields were thus discussed in connection to the ferroelectric/ferromagnetic interfaces.

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd2O3 thin films. Epitaxial Gd2O3:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd2O3:N layers indicate that nitrogen incorporation in Gd2O3 effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.

Realization of biferroic properties in La0.6Sr0.4MnO3∕0.7Pb(Mg1∕3Nb2∕3)O3–0.3(PbTiO3) epitaxial superlattices

A set of symmetric and asymmetric superlattices with ferromagnetic

Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 epitaxial bilayered heterostructures

La_{0.6}Sr_{0.4}MnO_3

Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

(LSMO) and ferroelectric

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

0.7Pb(Mg_{1/3}Nb_{2/3})O_3–0.3(PbTiO_3)

Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: process optimization, film analysis and electrical properties†

as the constituting layers was fabricated on

Magnetocapacitive La0.6Sr0.4MnO3 /0.7Pb(Mg1 / 3Nb2 / 3)O3–0.3PbTiO3 epitaxial heterostructure

LaNiO_3

Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si

coated 100 oriented

dc leakage mechanism in artificial biferroic superlattices

LaAlO_3