B. A. Block

THIN FILM CHANNEL WAVEGUIDES FABRICATED IN METALORGANIC CHEMICAL VAPOR DEPOSITION GROWN BATIO3 ON MGO

We report on the fabrication of channel waveguides in epitaxial grown BaTiO3 layers on MgO. Layers were prepared by metalorganic chemical vapor deposition. Ridge waveguides with ridge heights ranging from 15 to 200 nm were fabricated in a 0.2‐μm‐thick film. Single mode waveguide throughput, scattering loss, and mode profiles are reported. Coating waveguides with spin on glass significantly increase waveguide throughput. Throughputs of up to 10.4% were measured in 15 nm ridge waveguides which were 2.85 mm long and coated with spin on glass. Waveguide throughput is found to increase significantly with an increase in wavelength from 1.06 to 1.55 μm.

Photoluminescence properties of Er3+‐doped BaTiO3 thin films

Er3+‐doped BaTiO3 thin films were grown on Si (100) by metalorganic chemical vapor deposition. Strong characteristic Er3+ intra‐4f shell emission at 0.80 eV is observed at 16 and 295 K. The Er3+ luminescence intensity is linearly dependent on the pump power. Photoluminescence lifetimes were found to be on the order of 8 ms. These results indicate that Er‐doped BaTiO3 has potential as an optically active, nonlinear waveguide medium.

Luminescence quenching in Er-doped BaTiO3 thin films

Luminescence quenching in Er-doped epitaxial BaTiO3 thin films was investigated. From transient photoluminescence, nonradiative decay processes were measured, and a nonradiative resonant energy transfer model was developed. The nonradiative transition rate is linearly proportional to the OH impurity concentration in the films, indicating it is responsible for the observed quenching behavior.

Hydrogen complexes in epitaxial BaTiO3 thin films

Hydrogen complexes in epitaxial BaTiO3 thin films are investigated using Fourier transform infrared spectroscopy. Both undoped and Er-doped layers were grown using low-pressure metal–organic chemical vapor deposition. From the infrared spectra of the undoped and Er-doped films grown at 750–800 °C, infrared absorption was observed at 3486 cm−1. The absorption peak is attributed to a vibrational mode of O–H in BaTiO3. Moreover, the Er-doped layers showed additional absorption peaks at 2905 and 2964 cm−1. The peaks are ascribed to the vibrational modes of C–H complexes in the Er-doped layers.

Batio3 thin films for optically active waveguides

Abstract The photoluminescent properties of epitaxial Er doped BaTiO3 films have been measured over the temperature range of 15 −295 K. The characteristic Er3+ emission peak energy is centered at 0.800 eV and is nearly temperature independent. The integrated peak intensity at 295 K is comparable to the intensity at 15 K. The photoluminescence decay time is 6 msec. which is comparable to what is observed in other Er doped solids. The predicted laser gain is of the order of 10 cm−1.