B. Aktaş

Ab initio design of half-metallic fully compensated ferrimagnets : The case of Cr2MnZ (Z=P, As, Sb, and Bi)

Electronic structure calculations from first-principles are employed to design some new half-metallic fully-compensated ferrimagnets (or as they are widely known half-metallic antiferromagnets) susceptible of finding applications in spintronics. Cr2MnZ (Z= P, As, Sb, Bi) compounds have 24 valence electrons per unit cell and calculations show that their total spin moment is approximately zero for a wide range of lattice constants in agreement with the Slater-Pauling behavior for ideal half-metals. Simultaneously, the spin magnetic moments of Cr and Mn atoms are antiparallel and the compounds are ferrimagnets. Mean-field approximation is employed to estimate their Curie temperature, which exceeds room temperature for the alloy with Sb. Our findings suggest that Cr2MnSb is the compound of choice for further experimental investigations. Contrary to the alloys mentioned above half-metallic antiferromagnetism is unstable in the case of the Cr2FeZ (Z= Si, Ge, Sn) alloys.

Search for half-metallic ferrimagnetism in V-based Heusler alloys Mn2VZ (Z = Al, Ga, In, Si, Ge, Sn)

Using a state-of-the-art full-potential electronic structure method within the local spin density approximation, we study the electronic and magnetic structure of Mn2V-based full Heusler alloys: Mn2VZ (Z = Al, Ga, In, Si, Ge and Sn). We show that small expansion of the calculated theoretical equilibrium lattice constants restores the half-metallic ferrimagnetism in these compounds. Moreover, a small degree of disorder between the V and Z atoms, although it induces some states within the gap, preserves the Slater–Pauling behaviour of the spin magnetic moments and the alloys keep a high degree of spin polarization at the Fermi level, opening the way for a half-metallic compensated ferrimagnet.

Erratum: Doping and disorder in the CO2MnAl and Co2MnGa half-metallic Heusler alloys

We expand our study of the full-Heusler compounds [I. Galanakis et al., Appl. Phys. Lett. 89, 042502 (2006)] to cover also the case of doping and disorder in the case of

Influence of mixing the low-valent transition metal atoms (Y, Y*=Cr, Mn, Fe) on the properties of the quaternary Co2[Y1−xYx*]Z(Z=Al, Ga, Si, Ge, or Sn) Heusler compounds

{\mathrm{Co}}_{2}\mathrm{Mn}\mathrm{Al}

Doping and disorder in theCo2MnAlandCo2MnGahalf-metallic Heusler alloys

and

Size effects and origin of easy-axis in nickel nanowire arrays

{\mathrm{Co}}_{2}\mathrm{Mn}\mathrm{Ga}

Magnetic anisotropies in ultrathin iron films grown on the surface-reconstructed GaAs substrate

half-metallic Heusler alloys. These alloys present a region of very small minority density of states instead of a real gap. Electronic structure calculations reveal that doping with Fe and Cr in the case of

Ferromagnetic resonance studies of exchange coupled ultrathin Py/Cr/Py trilayers

{\mathrm{Co}}_{2}\mathrm{Mn}\mathrm{Al}

Ferromagnetic resonance in double perovskite epitaxial thin films of La2NiMnO6 on SrTiO3 and NdGaO3 substrates

retains half-metallicity contrary to the

Ferromagnetic resonance investigation of Py/Cr multilayer system

{\mathrm{Co}}_{2}\mathrm{Mn}\mathrm{Ga}