B. C. Crooker

MAGNETIC MEASUREMENTS ON THE III-VI DILUTED MAGNETIC SEMICONDUCTOR GA1-XMNXSE

We have investigated the magnetic properties of Ga1−xMnxSe, which represent a new class of diluted magnetic semiconductors based on a III-VI semiconductor. These are layered materials; however the local environment is tetrahedral as in the II-VI materials. In contrast to the II-VI semiconductors, the Mn substitutional atoms have direct bonds to three Se atoms and to either a Ga or Mn atom. This leads to a complex temperature dependent magnetization. In fields of 100 G and below, a broad peak is observed in the magnetization centered at 160 K. In addition, a sharp change in magnetization is observed at 119 K. In a field of 100 G, the peak has a magnitude of 3×10−5 emu/g above the background of 7×10−5 emu/g. With increasing magnetic fields, these features are broadened which is suggestive of some type of short-range antiferromagnetic ordering. At 5 K we observe a magnetization which increases linearly with field up to 6 T similar to the Van Vleck paramagnetic behavior observed in the Fe substituted II-VI se...

Magnetic measurements on the layered III–VI diluted magnetic semiconductor Ga1−xFexSe

Magnetic properties of single crystalline Ga1−xFexSe have been measured. This material is in the new class of diluted magnetic semiconductors based on the III–VI semiconductors. The magnetization versus field for an x=0.05 sample deviates from the linear response seen previously in Ga1−xMnxSe and Ga1−xMnxS and reaches a maximum of 0.12 emu/g (<7% of the expected saturation value) at 1.8 K in 7 T. Ga1−xFexSe exhibits an anisotropy below 2 T from 5 to 400 K with the hard axis perpendicular to the GaSe planes. Neither the broad peak observed from 119–195 K in Ga1−xMnxSe nor the Curie–Weiss behavior observed above 75 K in Ga1−xMnxS are observed in Ga1−xFexSe. The sharp cusp at 10.9 K in Ga1−xMnxS (characteristic of longer range ordering) is also not observed in Ga1−xFexSe in temperatures down to 1.8 K. In 0.1 T in temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.004 emu/g. Below 5 K, the magnetization approaches a constant value of approximately 0.12 emu/g. The magnetic behav...

Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As

We have obtained magnetoresistance data on low iron-concentration samples (∼1%) showing a large negative magnetoresistance (3.2% at 5 K in 0.5 T) attributed to imbedded superparamagnetic clusters in In0.53Ga0.47As. The samples were prepared by ion implanting a p-In0.53Ga0.47As layer with iron followed by a rapid thermal anneal. Magnetic measurements confirm the formation of a cluster size distribution with a mean diameter of 6.2 nm and effective moment of 7000 bohr magnetons. The magnetization of these single domain ferromagnets is 50% saturated in a field of only 0.2 T even at room temperature which is important for device applications.

Magnetic measurements on ferromagnetic behavior in the bulk II-VI diluted magnetic semiconductor Zn1-xCrxTe

Magnetic measurements on the ferromagnetic behavior in the bulk II–VI diluted magnetic semiconductor Zn1−xCrxTe were made on two x=0.0033 single crystals taken from different regions of the same boule. Ferromagnetism was verified in both samples by an Arrott plot analysis with a transition temperature at 365 K (well above room temperature). For both samples at room temperature, the coercive field is ∼0.0100 T and the remanent magnetization is 23% of the saturated value. The similarity in the observed ferromagnetic behavior between the two samples suggests that a stable CryTez or possibly ZnxCryTez precipitate phase is responsible, although a Cr-rich region in the bulk Zn1−xCrxTe itself cannot currently be conclusively ruled out as the source.