B. Deng

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

In this letter, the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition is proposed to solve Fermi level pinning issue. It has been revealed that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized after metalorganic chemical vapor deposition AlON at 300 °C. X-ray photoelectron spectroscopy observations of HfTiO/InGaAs gate stacks demonstrate that introducing AlON layer can suppress the regrowth of native oxide at the interface. In addition, the dependence of the valence band spectra of HfTiO/InGaAs gate stacks on AlON passivation layer has been discussed in detail.

CVD-derived Hf-based High-k Gate Dielectrics

Hf-based high-k gate dielectric has been recently highlighted as the most promising high-k dielectrics for the next-generation CMOS devices with high performance due to its excellent thermal stability and relatively high dielectric constant. This article provides a comprehensive view of the state-of-the-art research activities in advanced Hf-based high-k gate dielectrics grown by chemical-vapor-deposition-based method, including metal-organic-chemical-vapor-deposition (MOCVD), atomic-layer-chemical-vapor-deposition (ALCVD), and plasma-enhanced- chemical-vapor-deposition (PECVD), in CMOS device. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. After that, most attention has been paid to the detailed discussion of the latest development of novel Hf-based high-k gate dielectrics grown by CVD. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This article explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices.