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Dive into the research topics where B. Hönerlage is active.

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Featured researches published by B. Hönerlage.


Applied Physics Letters | 1997

Enhancement of optical gain of semiconductors embedded in three-dimensional photonic crystals

Yu. A. Vlasov; K. Luterova; I. Pelant; B. Hönerlage; V. N. Astratov

The three-dimensional photonic crystals used in this study were synthetic opals, composed of submicron silica spheres, close-packed in a face-centered cubic structure with a period of 200 nm, that exhibit photonic stopbands around 600 nm. We present measurements of the optical gain of CdS quantum dots (QDs) embedded inside the interstitials between the silica spheres. Unlike the usual gain spectra of CdS QDs in glass matrices, which display maximum gain at energies of the first quantum-confined transitions, for QDs embedded in photonic crystals the gain maximum is shifted toward the high-frequency edge of the photonic stopband (2.2 eV) far below the absorption edge of the semiconductor (2.5 eV). Studies of temperature, intensity, and orientation dependencies of the gain spectra allow one to ascribe the observed effect to gain enhancement caused by multiple coherent Bragg scattering of light in the periodic photonic crystal.


Physics Reports | 1985

The dispersion of excitons, polaritons and biexcitons in direct-gap semiconductors

B. Hönerlage; R. Levy; J.B. Grun; C. Klingshirn; K. Bohnert

Abstract Excitons are the energetically lowest excitations of the electronic system in an ideal semiconductor at zero temperature. If the excitons couple to the electromagnetic field, a mixed state is formed, the quanta of which are called excitonic polaritons. Associates of two excitons, so-called biexcitons, have been observed in many semiconductors. Excitons are known for about forty years. During the first three decades, they have been investigated mainly by the classical spectroscopic methods, i.e., reflection, transmission and luminescence spectroscopy. In the last decade, several new techniques have been developed, which allow for a direct spectroscopy in momentum space. In this contribution, we review these novel techniques, both linear and nonlinear ones, and present results obtained for excitons, polaritons and biexcitons. The review is restricted to semiconductors which have their conduction band minimum and their valence band maximum at the same point of the Brillouin zone (direct-gap materials) and which have a band to band transition which is dipole allowed.


Applied Physics Letters | 2004

Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation

K. Luterová; K. Dohnalová; Vladimir Švrček; I. Pelant; J.-P. Likforman; O. Crégut; P. Gilliot; B. Hönerlage

Porous silicon grains embedded in the phosphorus doped SiO2 matrix exhibit improved photoluminesce properties and better stability in comparison with native porous silicon samples. We have tested this material for the presence of room temperature optical amplification under femtosecond (100 fs, 395 nm) excitation. Combined variable stripe length and shifted excitation spot experiments reveal positive optical gain, the net modal gain coefficient reaching 25 cm−1 at a pump intensity of 1.1 W/cm2 (mean power). The gain spectrum is broad (full width at half maximum ∼130 nm), peaked at ∼650 nm, and is slightly blueshifted with regard to the standard photoluminescence emission.


New Journal of Chemistry | 2002

Fullerodendrimers with peripheral triethyleneglycol chains: synthesis, mass spectrometric characterization, and photophysical properties

Yannick Rio; Gianluca Accorsi; Hélène Nierengarten; Jean-Luc Rehspringer; B. Hönerlage; Giedrius Kopitkovas; Alexey Chugreev; Alain Van Dorsselaer; Nicola Armaroli; Jean-François Nierengarten

Poly(aryl ether) dendritic branches terminated with peripheral triethyleneglycol chains have been attached to C60. The resulting fullerodendrimers have been characterised by electrospray mass spectrometry (ESMS), which appears to be a particularly interesting analytical tool for the unambiguous structural assignment of such high molecular weight fullerene derivatives. Their photophysical properties have been systematically investigated in three solvents, namely toluene, dichloromethane, and acetonitrile. The changes observed in the photophysical properties along the series suggest an increasing interaction between the poly(aryl ether) dendritic wedges and the fullerene core, which brings about an increasing isolation of the central chromophore from the exterior. Finally, thanks to their high solubility, fullerodendrimers 1–4 have been easily incorporated in mesoporous silica glasses and preliminary measurements on the resulting doped samples have revealed efficient optical limiting properties.


Journal of Applied Physics | 2008

Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

Julien Petersen; Christelle Brimont; M. Gallart; O. Crégut; G. Schmerber; P. Gilliot; B. Hönerlage; C. Ulhaq-Bouillet; J. L. Rehspringer; Cédric Leuvrey; S. Colis; H. Aubriet; C. Becker; D. Ruch; A. Slaoui; A. Dinia

The present study focuses on the structural and optical properties of ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates. The ZnO films have a hexagonal wurtzite structure with a grain size of about 50 nm. The x-ray photoelectron spectroscopy measurements reveal the presence of Zn2+ and of zinc hydroxyl groups at the film. Optical properties were studied by photoluminescence (PL) and absorption spectroscopy at low and room temperatures. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, PL observations show two transitions: one near the absorption edge in the ultraviolet (UV) region and the second centered at 640 nm, characteristic of the deep electronic levels in the bandgap. The spectrum at 6 K is dominated by donor bound exciton lines and donor-acceptor pair transitions. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of g...


Physical Review B | 2013

Biexciton, single carrier, and trion generation dynamics in single-walled carbon nanotubes

Bertrand Yuma; Stéphane Berciaud; Jean Besbas; Jonah Shaver; Silvia M. Santos; Saunab Gosh; R. Bruce Weisman; Laurent Cognet; M. Gallart; Marc Ziegler; B. Hönerlage; Brahim Lounis; P. Gilliot

We present a study of free carrier photo-generation and multi-carrier bound states, such as biexcitons and trions (ionized excitons), in semiconducting single-walled carbon nanotubes. Pump-and-probe measurements performed with fs pulses reveal the effects of strong Coulomb interactions between carriers on their dynamics. Biexciton formation by optical transition from exciton population results in an induced absorption line (binding energy 130 meV). Exciton-exciton annihilation process is shown to evolve at high densities towards an Auger process that can expel carriers from nanotubes. The remaining carriers give rise to an induced absorption due to trion formation (binding energy 190 meV). These features show the dynamics of exciton and free carriers populations.


Journal of Applied Physics | 2002

Stimulated emission in blue-emitting Si+-implanted SiO2 films?

K. Luterová; I. Pelant; I. Mikulskas; Rolandas Tomasiunas; D. Muller; J.J. Grob; J. L. Rehspringer; B. Hönerlage

We investigate the blue photoluminescence of Si+-implanted SiO2 films under picosecond UV excitation. The emission intensity exhibits a nonlinear increase with increasing excitation intensities, accompanied by pulse shortening. The photoluminescence decays nonmonoexponentially in time. However, the nonlinearities are not associated with significant spectral narrowing. To explain the results, we propose and numerically investigate a kinetic model based on competition between radiative (both spontaneous and stimulated) and nonradiative recombination in isolated luminescence centers in the SiO2 matrix. Good agreement between theoretical and experimental data seems to confirm the existence of stimulated emission in the films, however, under extremely high excitation densities only (approximately 100 MW/cm2).


Applied Physics Letters | 2012

Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain

Kateřina Kůsová; Lukáš Ondič; Eva Klimešová; Kateřina Herynková; I. Pelant; Stanislav Daniš; Jan Valenta; M. Gallart; Marc Ziegler; B. Hönerlage; P. Gilliot

We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals.


Microelectronics Journal | 2009

Optical properties of ZnO thin films prepared by sol-gel process

Julien Petersen; Christelle Brimont; M. Gallart; O. Crégut; G. Schmerber; P. Gilliot; B. Hönerlage; C. Ulhaq-Bouillet; J. L. Rehspringer; Cédric Leuvrey; S. Colis; A. Slaoui; A. Dinia

The present study focused on ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates. ZnO thin films have a hexagonal wurtzite structure with a grain diameter about 50nm. Optical properties were determined by photoluminescence (PL) and absorption spectroscopy. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, two transitions were observed by PL. One near to the prohibited energy band in ultraviolet (UV) region and the other centered at 640nm, characteristic of the electronic defects in the band-gap. The spectrum at 6K is dominated by donor-bound exciton lines and donor-acceptor pair transition. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of high-quality thin films.


Solid State Communications | 1983

Optical bistability due to biexcitons in CuCl

R. Levy; J.Y. Bigot; B. Hönerlage; F. Tomasini; J.B. Grun

Abstract Biexciton optical bistability is observed for the first time using CuCl as a nonlinear medium in a Fabry-Perot. The effect is obtained with a high intensity pulsed dye laser which excites the sample and modifies its refractive index near half the biexciton energy. The switching times of the device are shown to be inferior to 500 ps. The bistability is observed at pumped liquid helium and at liquid nitrogen temperatures.

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P. Gilliot

University of Strasbourg

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M. Gallart

University of Strasbourg

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O. Crégut

Centre national de la recherche scientifique

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R. Levy

Centre national de la recherche scientifique

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I. Pelant

Centre national de la recherche scientifique

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Jan Valenta

Charles University in Prague

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J.B. Grun

Centre national de la recherche scientifique

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S. Cronenberger

Centre national de la recherche scientifique

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K. Luterová

Academy of Sciences of the Czech Republic

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