B. Ilahi

Tuning of dielectric, pyroelectric and ferroelectric properties of 0.715Bi0.5Na0.5TiO3-0.065BaTiO3-0.22SrTiO3 ceramic by internal clamping

This study systematically investigates the phenomenon of internal clamping in ferroelectric materials through the formation of glass-ceramic composites. Lead-free 0.715Bi(0.5)Na(0.5)TiO(3)-0.065BaTiO(3)-0.22SrTiO(3) (BNT-BT-ST) bulk ferroelectric ceramic was selected for the course of investigation. 3BaO - 3TiO(2) - B2O3 (BTBO) glass was then incorporated systematically to create sintered samples containing 0%, 2%, 4% and 6% glass (by weight). Upon glass induction features like remnant polarization, saturation polarization, hysteresis losses and coercive field could be varied as a function of glass content. Such effects were observed to benefit derived applications like enhanced energy storage density similar to 174 k J/m(3) to similar to 203 k J/m(3) and pyroelectric coefficient 5.7x10(-4) Cm-2K-1 to 6.8x10(-4) Cm-2K-1 by incorporation of 4% glass. Additionally, BNT-BT-ST depolarization temperature decreased from 457K to 431K by addition of 4% glass content. Glass incorporation could systematically increases diffuse phase transition and relaxor behavior temperature range from 70 K to 81K and 20K to 34 K, respectively when 6% and 4% glass content is added which indicates addition of glass provides better temperature stability. The most promising feature was observed to be that of dielectric response tuning. It can be also used to control (to an extent) the dielectric behavior of the host ceramic. Dielectric permittivity and losses decreased from 1278 to 705 and 0.109 to 0.107 for 6% glass, at room temperature. However this reduction in dielectric constant and loss increases pyroelectric figures of merit (FOMs) for high voltage responsivity (F-v) high detectivity (F-d) and energy harvesting (F-e) from 0.018 to 0.037 m(2)C(-1), 5.89 to 8.85 mu Pa-1/2 and 28.71 to 61.55 Jm(-3)K(-2), respectively for 4% added ceramic-glass at room temperature. Such findings can have huge implications in the field of tailoring ferroelectric response for application specific requirements

Efficient Solar Energy Conversion Using CaCu3Ti4O12 Photoanode for Photocatalysis and Photoelectrocatalysis

A highly efficient third generation catalyst, CaCu3Ti4O12 (CCTO) shows excellent photoelectrochemical (PEC) and photocatalytic ability. As only 4% part of the solar spectrum covers UV light, thus it is highly desirable to develop visible light active photocatalyst materials like CCTO for effective solar energy conversion. A direct band transition with a narrow band gap (1.5 eV) was observed. Under light irradiation, high photocurrent density was found to be 0.96 mA/cm2, indicating the visible light induced photocatalytic ability of CCTO. Visible light mediated photocatalytic and photoelectrocatalytic degradation efficiency of CaCu3Ti4O12 pellets (CCTO) was investigated for three classes of pharmaceutical waste: erythrosin (dye), ciprofloxacin (antibiotic) and estriol (steroid). It is found that the degradation process follows first order kinetic reaction in electrocatalysis, photocatalysis and photoelectrocatalysis and high kinetic rate constant was observed in photoelectrocatalysis. This was quite high in comparison to previously reported methods.

Excitonic properties of wurtzite InP nanowires grown on silicon substrate

In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V/III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.

Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation using the finite element methods and taking into account the strain induced by the lattice mismatch. We have considered a lens shaped InAs QDs in a pure GaAs matrix and either with InGaAs strain reducing cap layer or underlying layer. The correlation between numerical calculation and PL measurements allowed us to track the mean buried QDs size evolution with respect to the surrounding matrix composition. The simulations reveal that the buried QDs’ realistic size is less than that experimentally driven from atomic force microscopy observation. Furthermore, the average size is found to be slightly increased for InGaAs capped QDs and dramatically decreased for QDs with InGaAs under layer.

An experimental study on thermal energy harvesting using Ca0.15(Sr0.5Ba0.5)0.85Nb2O5 pyroelectric ceramics

Abstract Pyroelectric materials can be used for energy harvesting in integrated Micro-Electro-Mechanical-Systems (MEMS) and low power electronics devices. This paper considers the thermal energy harvesting using Ca0.15(Sr0.5Ba0.5)0.85Nb2O5 (CSBN) pyroelectric ceramics. Hot/cold air was used to generate a continuous temporal temperature profile on the material surfaces. The maximum open circuit voltage was observed as 0.26V. The maximum stored energy was 1.9 μJ in 47 μF capacitor (without load resistance). The maximum power was found to be 2.07nW across 3 MΩ and 47 μF.

Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400∘C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O13 and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n+-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n+-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

Effect of functionalisation of MWCNTs on optical and morphological properties of MEH–PPV/MWCNTs nanocomposites

The effect of functionalisation of Multi–Walled CNTs (MWCNTs) as a way to ameliorate their dispersion has been quantified. Two kinds of nanocomposites have been elaborated, using a spin–coating as deposition technique: poly (2–methoxy–5–(2–ethyhexyl–oxy)–p–phenylenevinylene) (MEH–PPV) as an electron donor, pristine MWCNTs and polystyrene–functionalised MWCNTs (PS:MWCNTs) as electron acceptors. MEH–PPV/MWCNTs and MEH–PPV/PS:MWCNTs nanocomposites are characterised by photoluminescence spectroscopy and atomic force microscopy to study the charge transfer efficiency and morphological properties of these structures. An efficient charge transfer in MEH–PPV/MWCNTs and MEH–PPV/PS:MWCNT nanocomposites has taken place, but is broken when reaching a critical concentration of 0.5 and 1 wt.%, respectively. Once these critical concentrations are reached and supported by AFM images, aggregates of MWCNTs and PS:MWCNTs have been observed.

In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy

Abstract. This work reports on a chemical beam epitaxy growth study of InGaAs/GaAs quantum dots (QDs) engineered using an in-situ indium-flush technique. The emission energy of these structures has been selectively tuned over 225 meV by varying the dot height from 7 to 2 nm. A blueshift of the photoluminescence (PL) emission peak and a decrease of the intersublevel spacing energy are observed when the dot height is reduced. Numerical investigations of the influence of dot structural parameters on their electronic structure have been carried out by solving the single-particle one-band effective mass Schrödinger equation in cylindrical coordinates, for lens-shaped QDs. The correlation between numerical calculations and PL results is used to better describe the influence of the In-flush technique on both the dot height and the dot composition.