B. J. van Wees

Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

We have calculated the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1% only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.

Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve.

Finding a means to generate, control and use spin-polarized currents represents an important challenge for spin-based electronics, or ‘spintronics’. Spin currents and the associated phenomenon of spin accumulation can be realized by driving a current from a ferromagnetic electrode into a non-magnetic metal or semiconductor. This was first demonstrated over 15 years ago in a spin injection experiment on a single crystal aluminium bar at temperatures below 77 K. Recent experiments have demonstrated successful optical detection of spin injection in semiconductors, using either optical injection by circularly polarized light or electrical injection from a magnetic semiconductor. However, it has not been possible to achieve fully electrical spin injection and detection at room temperature. Here we report room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips. We anticipate that larger signals should be obtainable by optimizing the choice of materials and device geometry.

Electrical detection of spin precession in a metallic mesoscopic spin valve

To study and control the behaviour of the spins of electrons that are moving through a metal or semiconductor is an outstanding challenge in the field of ‘spintronics’, where possibilities for new electronic applications based on the spin degree of freedom are currently being explored. Recently, electrical control of spin coherence and coherent spin precession during transport was studied by optical techniques in semiconductors. Here we report controlled spin precession of electrically injected and detected electrons in a diffusive metallic conductor, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The output voltage of our device is sensitive to the spin degree of freedom only, and its sign can be switched from positive to negative, depending on the relative magnetization of the ferromagnetic electrodes. We show that the spin direction can be controlled by inducing a coherent spin precession caused by an applied perpendicular magnetic field. By inducing an average precession angle of 180°, we are able to reverse the sign of the output voltage.

Coulomb-blockade transport in single-crystal organic thin-film transistors

Coulomb-blockade transport—whereby the Coulomb interaction between electrons can prohibit their transport around a circuit—occurs in systems in which both the tunnel resistance, RT, between neighbouring sites is large (≫h/e2) and the charging energy, EC (EC = e2/2C, where C is the capacitance of the site), of an excess electron on a site is large compared to kT. (Here e is the charge of an electron, k is Boltzmanns constant, and h is Plancks constant.) The nature of the individual sites—metallic, superconducting, semiconducting or quantum dot—is to first order irrelevant for this phenomenon to be observed. Coulomb blockade has also been observed in two-dimensional arrays of normal-metal tunnel junctions, but the relatively large capacitances of these micrometre-sized metal islands results in a small charging energy, and so the effect can be seen only at extremely low temperatures. Here we demonstrate that organic thin-film transistors based on highly ordered molecular materials can, to first order, also be considered as an array of sites separated by tunnel resistances. And as a result of the sub-nanometre sizes of the sites (the individual molecules), and hence their small capacitances, the charging energy dominates at room temperature. Conductivity measurements as a function of both gate bias and temperature reveal the presence of thermally activated transport, consistent with the conventional model of Coulomb blockade.

Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field.

We experimentally study the electronic spin transport in hexagonal BN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 μm even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is τ(⊥)/τ(||) ≈ 0.75 for zero applied perpendicular electric field. By tuning the electric field, this anisotropy changes to ≈ 0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm2 V−1 s−1 at room temperature to 49 000 cm2 V−1 s−1 at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

Hot electron tunable supercurrent

A Josephson junction has been realized in which the supercurrent flow is regulated by a “normal” control current traversing the normal metal in between the superconducting electrodes. The principle of operation of the devices is based on the existing relation between the magnitude of the supercurrent and the electronic distribution function in the junction. This method for controlling the supercurrent has clear advantages over other known methods and is relevant for superconducting electronics applications.

Observation of the Spin Peltier Effect for Magnetic Insulators

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modeling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.

Interplay of Peltier and Seebeck Effects in Nanoscale Nonlocal Spin Valves

We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third harmonic voltage response nonlocally, the model is experimentally examined. The results indicate that the combination of Peltier and Seebeck effects contributes significantly to the nonlocal baseline resistance. Moreover, we found that the second and third harmonic response signals can be attributed to Joule heating and temperature dependencies of both the Seebeck coefficient and resistivity.

24-mu m spin relaxation length in boron nitride encapsulated bilayer graphene

We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths