B. Jaroszewicz

Silicon ultra fast cameras for electron and γ sources in medical applications

Abstract SUCIMA (Silicon Ultra fast Cameras for electron and γ sources In Medical Applications) is a project approved by the European Commission with the primary goal of developing a real time dosimeter based on direct detection in a Silicon substrate. The main applications, the detector characteristics and technologies and the data acquisition system are described.

Hybrid active pixel sensors and SOI inspired option

Abstract Two novel pixel sensor concepts for future linear collider applications are presented in this paper: a hybrid pixel sensor characterized by a layout improving the single point resolution and a monolithic detector inspired by silicon on insulator (SOI) technology. The results of charge collection studies for the first prototypes of hybrid pixel sensors with interleaved pixels are reported and the new detector test structures are introduced. The technology and the readout architecture design for SOI sensors are also discussed.

High-resolution hybrid pixel sensors for the e+e− TESLA linear collider vertex tracker

Abstract In order to fully exploit the physics potential of a future high-energy e+e− linear collider, a Vertex Tracker, providing high-resolution track reconstruction, is required. Hybrid silicon pixel sensors are an attractive option, for the sensor technology, due to their read-out speed and radiation hardness, favoured in the high-rate environment of the TESLA e+e− linear collider design, but have been so far limited by the achievable single point space resolution. In this paper, a conceptual design of the TESLA Vertex Tracker, based on a novel layout of hybrid pixel sensors with interleaved cells to improve their spatial resolution, is presented.

Fully depleted monolithic active pixel sensor in SOI technology

An active pixel detector, which exploits wafer-bonded silicon on insulator (SOI) substrates for integration of the readout electronics with the pixel detector, is presented. The main concepts of the proposed monolithic sensor and the preliminary tests results with ionising radiation sources are addressed. Silicon on insulator is an alternative solution for a monolithic active pixel detector, which allows integrating a fully depleted sensor and front-end electronics active layers into one silicon wafer. The main idea of the sensor relies on the use of both monolithic silicon layers (device and support layers) of the SOI substrate for fabrication of pixel detector diodes and readout electronics. Such detectors can find wide range of applications, not only in particle physics but also in medicine, space science and many other disciplines. The sensor structure and the readout configuration have been developed and the measurements of a dedicated test structure have validated the new technology of the SOI detector. Small SOI sensor matrices with 8 by 8 channels have been recently produced and tested.

SOI-Based Microsensors

A silicon-on-insulator (SOI) technology has become a key tool for manufacturing of microsensors. A number of the SOI-based microsensors have been presented in the chapter. The developments are related mostly to non-electrical sensors. Most of them have been developed at Instytut Technologii Elektronowej (ITE) Warsaw, in collaboration with numerous partners. The chapter is divided into two main sections describing the technology and device issues. First, ITE expertise in the area of SOI technologies is described. The SOI CMOS processes based on wafers with a thick and thin device layers are presented. The CMOS technology has become an origin for a PaDEOx technique developed for narrow (order of 100 nm width) line fabrication on the silicon wafers, which allows for development of nanowire-based devices (e.g. multi-gate MOSFETs). The second branch of the SOI technologies, being under development in ITE, includes micromachining techniques. Based on the SOI technologies, a number of devices have been developed with the ITE participation. The following solutions have been presented: monolithic pixel detectors of ionizing radiation, sub-THz radiation detectors based on a concept of radiation-induced plasmon oscillations in the MOSFET channels, smart antennas with a reconfigurable aperture. Next, devices fabricated based on micromachining techniques have been mentioned, e.g. microactuators and probes for scanning thermal microscopy. Finally, development of SOI-based biochemical sensors for small volume sample testing is more widely described. These devices have been manufactured based on the PaDEOx technique and have been applied for analysis of hydrogen an metal ions in water solutions.

Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation

Development of a novel monolithic active pixel image sensor based on SOI technology is presented. Active pixel test matrices have been recently manufactured and are under extensive examination. This paper describes the concept of the device and shows the most recent results.

V TH -Extractors Based Readout Circuit of ISFET with Temperature Compensation

-This paper proposes a novel readout circuit of ion sensitive field effect transistor (ISFET) with temperature compensation using two threshold voltage (VTH) extractor circuits. The first VTH extractor with ISFET gives the pH reading and the second VTH extractor with depletion-type MOSFET (DMOSFET) provides the temperature compensation. The entire circuit uses only 20 transistors and dissipates a power of 889.3 muW. This design offers a sensitivity of 54 mV/pH and an improved temperature coefficient (T.C.) of 0.02 mV/degC.

Development of a Flow-Thru System Containing a p-Well Type Ion Sensitive Field Effect Transistor Array for Determination of Electrolytes and Urea in Dialysate

In this paper, technology of p-well type ISFETs sensor array, its local chemical and enzymatic modifications resulting in sensors sensitive to different analytes are presented. The developed flow-thru system consisted of a monolithic six-sensor array of p-well type ISFETs fabricated in a CMOS technology. The sensor array is prevented to cross-talk between sensors. Application of the sensor array led to significant simplification of construction of the multi-parameter analytical system. The performances of a model ISFET array with sensors sensitive to: potassium, hydrogen and ammonium ions, as well as urea are described.

Analog processor design for potentiometric sensor array and its applications in smart living space

This paper presents an analog processor design for ion sensitive field effect transistor (ISFET)-based flow through system and its application in smart living space. The dynamic flow-cell measurement explores more information compared to stationary measurement and is useful in environmental monitoring and electronic tongue systems. The multi-channel floating source readout circuitry has been developed for flow-through analysis of ion sensitive field effect transistor based array. The flow injection analysis system with two different ISFET structures has been investigated by using performance parameters such as sensitivity, uniformity, response time of pH sensing. In addition, a self-tuning multi-sensor water quality monitoring system based on adaptive-network-based fuzzy interference system (ANFIS) learning method is developed. The results can be directly used in drinking water and swimming pool monitoring for improving living space and quality.