B. N. Zvonkov

Quantum corrections to conductivity: From weak to strong localization

Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for

Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas

k_F l=25-2

Electron-electron interaction with decreasing conductance

and behaves like diffusive one for

Giant suppression of the Drude conductivity due to quantum interference in the disordered two-dimensional system GaAs/InxGa1- xAs/GaAs

k_F l=2-0.5

Renormalization of hole-hole interaction at decreasing Drude conductivity: Gated Ga As ∕ In x Ga 1 − x As ∕ Ga As heterostructures

down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when

Hole-hole interaction in a strained In x Ga 1 − x As two-dimensional system

k_F lsimeq 1

Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures

. They are close in magnitude to the Drude conductivity so that the conductivity

Antilocalization and spin-orbit coupling in the hole gas in strained Ga As ∕ In x Ga 1 − x As ∕ Ga As quantum well heterostructures

sigma

Interference-induced metalliclike behavior of a two-dimensional hole gas in an asymmetric GaAs/InxAa1- xAs/GaAs quantum well

becomes significantly less than

Low magnetic field anomaly of the Hall effect in disordered two-dimensional systems: Interplay between weak localization and electron-electron interaction

e^{2}/h